Abstract: A method and apparatus for controlling game applications are provided. In the method, when an operating system receives a game starting command, the operating system determines a manner to start a corresponding game application according to whether the game application has resided in a memory, and when a cold boot manner is used, the operating system triggers the game application to report an amount of memory required currently by the game application, and determines whether a requirement of running the game application is met according to the amount of memory required and an amount of memory currently used, or the operating system ensures to meet the requirement of running the game application through background application freezing and clearing.

Abstract: A plurality of openings is formed in a dielectric layer formed on a semiconductor substrate. The plurality of openings comprises a first opening extending to the semiconductor substrate, a second opening extending to a first depth that is substantially less than a thickness of the dielectric layer, and a third opening extending to a second depth that is substantially greater than the first depth. A multi-layer gate electrode is formed in the first opening. A thin resistor structure is formed in the second opening, and a connection structure is formed in the third opening, by filling the second and third openings substantially simultaneously with a resistor metal.

Abstract: A non-vascular lumen guide wire, comprising a mandrel (1) and a ball head (2) prepared with a metal material, wherein an outer diameter of the insertion end of the mandrel (1) is smaller than the outer diameter of the non-insertion end of the mandrel; the insertion end of the mandrel (1) is connected to the ball head (2), a plastic coating layer (3) is wrapped around the outer side of the mandrel (1), the outer diameter of the ball head (2) is larger than the outer diameter of the insertion end of the plastic coating layer (3), and the outer diameter of the ball head (2) is not larger than the non-insertion end of the plastic coating layer (3). The guide wire, by means of using a ball head (2) with a diameter slightly larger than the plastic coating layer (3) at a far end, may effectively avoid the defects that the guide wire falls off in actual use, or the plastic coating layer (3) at the far end easily rolls up when inserted.

Abstract: A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain in the substrate, a gate electrode disposed over the substrate between the source and drain. An inner spacer is disposed at least partially over the gate electrode. An outer spacer is disposed adjacent to a sidewall of the gate electrode.

Abstract: In an example of a method for increasing strength of an aluminum alloy, the aluminum alloy is formed in a molten state. The aluminum alloy includes from about 4 wt % to about 11 wt % silicon, from greater than 0.2 wt % to about 0.5 wt % chromium, from about 0.1 wt % to about 0.5 wt % magnesium, from about 0.01 wt % to about 0.1 wt % titanium, equal to or less than about 0.5 wt % iron, equal to or less than about 0.5 wt % manganese, and a balance of aluminum. The aluminum alloy is subjected to a solution heat treatment. The aluminum alloy is quenched, and the aluminum alloy is age hardened at an age hardening temperature ranging from about 140° C. to 175° C. for a time period ranging from about 3 hours to about 35 hours.

Abstract: Semiconductor devices and methods of forming the same are disclosed. A semiconductor device includes a substrate, a gate structure over the substrate, a spacer and a source/drain region. The gate structure is disposed over the substrate. The spacer is disposed on a sidewall of the gate structure, wherein the spacer has a top surface lower than a top surface of the gate structure. The source/drain region is disposed adjacent to a sidewall of the spacer.

Abstract: The invention relates to a seat length adjuster (3), especially for a vehicle seat, comprising at least: two rail pairs (10) arranged at a distance from each other, formed respectively by two rails, an upper rail (11) and a lower rail (12), wherein the upper rail is provided with openings (16) and the lower rail (12) has through holes (14), and at least one spring-loaded, movable locking member (21), which is held on the upper rail (11) and which blocks a movement of the upper rail (11) in the lower rail (12) in a locked position (VS), and which carries toothlike protrusions (15) on its two opposite lengthwise sides, which are movable from a released position (FS) into the locked position (VS) both into the openings (16) and into the through holes (14), wherein the locking member (21) secures the upper rail (11) and lower rail (12) in the locked position (VS), wherein the openings (16) and/or the through holes (14) have contact regions (K) for the toothlike protrusions (15) of the locking member (21) and

Abstract: The present invention provides a method for 3D waveform mapping of full-parallel structure, first, a 3D waveform mapping database is created according to the size of a 3D waveform image, the number of bits of probability value and the ADC's resolution of data acquisition module, then the 3D waveform mapping database is divided into Mt×Ma independent mapping storage areas along the time axis and the amplitude axis, and each independent mapping storage area is assigned a RAM, then RAMs are selected and addresses are calculated based on the sampling values and the structure of created 3D waveform mapping database, finally, parallel mappings are performed simultaneously on the time axis and the amplitude axis according to the selected RAMs and calculated addresses. Thus, the mapping time are shorten, especially in vector mapping mode, several RAMs are used for mapping, so the WCR of DSO is improved.

Abstract: The flow modifier particle composition contain a viscoelastic base agent, a selective solubilizer, a density modifier, a sweller, and an optional plasticizer, wherein based on the total weight of the flow modifier particle composition, the content of the viscoelastic base agent is 30-90 wt %, the content of the selective solubilizer is 3-30 wt %, the content of the density modifier is 0.1-30 wt %, the content of the sweller is 1-30%, and the content of the plasticizer is 0-10 wt %. The present invention further discloses a flow modifier, which contains the flow modifier particle composition and a carrying fluid that contains water and a surfactant. The present invention further discloses a preparation method of the flow modifier, and a use of the flow modifier and the flow modifier particle composition in exploitation of fracture-cave reservoirs.

Abstract: Embodiments described herein generally relate to compositions including discrete nanostructures (e.g., nanostructures including a functionalized graphene layer and a core species bound to the functionalized graphene layer), and related articles and methods. A composition may have a coefficient of friction of less than or equal to 0.02. Discrete nanostructures may have a substantially non-planar configuration. A core species may reversibly covalently bind a first portion of a functionalized graphene layer to a second portion of the functionalized graphene layer. Articles, e.g., articles including a plurality of discrete nanostructures and a means for depositing the plurality of discrete nanostructures on a surface, are also provided. Methods (e.g., methods of forming a layer) are also provided, including depositing a composition onto a substrate surface and/or applying a mechanical force to the composition, e.g., such that the composition exhibits a coefficient of friction of less than or equal to 0.02.

Abstract: A double-layered drainage tube, composed of an inner layer and an outer layer closely attached to each other is shown. The inner layer is made of a hydrophobic material, and the outer layer is made of a human biocompatible material. Liquids do not adhere to the inner wall, thereby preventing tube clogging. The outer wall is soft and elastic, has a smooth surface, and has a good compatibility with body tissues without causing inflammation. Moreover, in the case where there is no middle layer of a stainless steel wire, the diameter and cost of an outer tube are reduced and the insertion difficulty is reduced, and the inner diameter of the drainage tube is increased, and the effective drainage cross-sectional area of the drainage tube is increased.

Abstract: An oil-soluble coated particle flow modifier, a preparation method thereof, and a use thereof in fractured-vuggy carbonate reservoirs mining. The oil-soluble coated particle flow modifier is of a core-shell structure, which has a core layer of a coated core and a shell layer of a coating agent, wherein the coated core is made of a plugging material, and the coating agent consists of petroleum resin and hollow beads. Based on the total weight of the coated particle flow modifier, the content of the petroleum resin, the hollow beads, the cotton linters, and the coated cores is 10-40 wt %, 9-40 wt %, 1-10 wt %, and 35-80 wt %, respectively. A preparation method of the coated particle flow modifier and a use of the coated particle flow modifier in fractured-vuggy carbonate reservoirs mining to improve oil recovery is also provided.

Abstract: Provided is a method of heat treating a die cast aluminum alloy component. A die cast component has at least one thin walled region with a thickness of ?5 mm. The alloy has silicon at ?6.5 mass % to ?15.5 mass %, copper at ?0.1 mass % to ?3.5 mass %, magnesium at ?0.5 mass %, manganese at ?0.6 mass %, and chromium at ?0.6 mass %. The method includes quenching the die cast component at a cooling rate of ? about 100° C./second to a first temperature of less than 50° C. and age hardening by heating the die cast component to a second temperature of ? about 150° C. for a predetermined duration of time to facilitate formation of particles of Mg2Si in an aluminum alloy matrix. The aluminum alloy treated by the method can form lightweight, high strength, high ductility components.

Abstract: Semiconductor devices and methods of forming the same are disclosed. A semiconductor device includes a substrate, a gate structure over the substrate, a spacer and a source/drain region. The gate structure is disposed over the substrate. The spacer is disposed on a sidewall of the gate structure, wherein the spacer has a top surface lower than a top surface of the gate structure. The source/drain region is disposed adjacent to a sidewall of the spacer.

Abstract: An aluminum-magnesium alloy is disclosed which provides superior properties for casting in steel dies and good ductility for forming castings of complex shapes, including thin-wall portions. The aluminum-based alloy contains, in weight percent, about 2-15 percent magnesium, 0.2 to 3 percent silicon, 0.05 to 0.5 percent chromium, 0.05 to 0.5 percent manganese, 0.05 to 0.2% titanium, and a minimal content of iron. In its molten state this aluminum-magnesium-chromium alloy can be pushed into the molding cavities of iron-based dies in a high pressure die casting procedure and conform to complexly-shaped die surfaces with thin cavity portions without dissolving appreciable amounts of iron or experiencing die soldering on the die surfaces. The resulting castings display good strength and ductility and can be further enhanced by an artificial aging process after solution heat treatment.

Abstract: Methods of casting lightweight, high-strength aluminum cast structural components are provided wherein the casting is accomplished by low-pressure die casting or gravity casting. The aluminum cast structural component is preferably composed of an aluminum-based alloy comprising silicon at ?about 4 to ?about 7 wt. %; iron at ?about 0.15 wt. %; manganese at ?about 0.5 wt. %; chromium at ?about 0.15 to ?about 0.5 wt. %; magnesium at ?about 0.8 wt. %; zinc at ?about 0.01 wt. %; titanium at ?about 0.05 to ?about 0.15 wt. %; phosphorus at ?about 0.003 wt. %; strontium at ?about 0.015 wt. % and a balance of aluminum.

Abstract: Disclosed are a human rare blood type detection method, a kit, a rapid screening method and applications thereof. By using multiple pairs of PCR specific primers directing to the SNP loci of multiple rare blood types, the SNP loci of multiple rare blood types are simultaneously detected in the same PCR reaction system; and the multiplex PCR detection method and a Pool detection method are combined to rapidly screen the human rare blood types.

Abstract: A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.

Abstract: The present invention provides a novel phenothiazine-pyridine compound that is an effective photosensitizer useful for photodynamic therapy. Also provided is a method for inhibiting cell proliferation or for treating a disease involving inappropriate cell proliferation.

Abstract: A method of manufacturing a pin (46) for a o mold (28) includes forming the pin (46) to include a substantially uniform initial hardness throughout the entire structure of the formed pin (46). The formed pin (46) is then processed with a hardening process, such that the processed pin(46) exhibits a hardness defining a hardness gradient that gradually increases from the initial hardness at a central interior region (56) of the pin (46) to an increased surface hardness at an exterior surface (60) of the pin (46). After processing the pin (46) with the hardening process, a coating (64) maybe deposited onto the exterior surface (60) of the pin (46) with a physical vapor deposition process. The coating (64) exhibits a hardness that is greater than the hardness of the increased surface hardness of the exterior surface (60) of the pin (46). The pin (46) may include, for example, a core pin, a squeeze pin, or an ejector pin.