Abstract: A seat length adjuster for a vehicle seat may have two rail pairs, each pair formed by an upper rail and a lower rail. The upper rail is provided with openings and the lower rail has through holes. At least one spring-loaded, movable locking member may be provided. The locking member carries toothlike protrusions on its two opposite lengthwise sides, which are movable from a released position into the locked position both into the openings and into the through holes. The openings and/or the through holes have contact regions for the toothlike protrusions of the locking member and at least some of the toothlike protrusions have a respective undercut on both tooth flanks. In the locked position a projecting edge resulting from this on the respective tooth flank lies opposite the contact region and/or touches this contact region.

Abstract: The embodiment claims an electrode assembly, its manufacturing method and battery cell made of such. The assembly unit from the top to bottom integrates first electrode plate, first separator plate, second electrode plate, second separator plate and another first electrode plate. The polarity of the first and second electrode plate is opposite to each other. The edges of the first and second separator plates join on one side forming U shape structure. The electrode assembly in this embodiment is a unit for multiple stacking of such to form the internal structure of a battery cell. Such design offers improved efficiency in cell manufacturing and achieves accurate alignments between positive and negative electrodes. The assembly unit upon numerous stacking would ensure overall alignments of positive and negative electrodes for cell quality improvement.

Abstract: An electrode assembly formed by winding a first electrode plate, a separator and a second electrode plate. A winding terminating end of the first electrode plate is positioned on an outer side of a winding terminating end of the second electrode plate facing away from a winding core. A first active material layer on the winding terminating end of the first electrode plate covers one surface of the first current collector facing toward the second electrode plate. The other surface of the first current collector on the winding terminating end of the first electrode plate facing away from the second electrode plate is not coated with the first active material layer. The electrode assembly does not have a plain aluminum foil at the outermost ring, which enhances the energy density of lithium-ion batteries and improves drop safety. The application further provides a battery having the same.

Abstract: The specification discloses image and data processing methods and apparatuses. The method includes: obtaining a source pose and texture information according to a source image; obtaining a first synthetic image according to the source image, a target pose, and the source pose; obtaining a residual map according to the texture information and the first synthetic image; and obtaining a second synthetic image according to the first synthetic image and the residual map. The specification resolves the technical problem of lacking a sense of reality in a synthetic image due to loss of texture details in feature extraction during character action transfer in the existing technologies.

Abstract: A semi-finished product of a power device including a semiconductor chip and a first solder pad is provided. The semiconductor chip has an active surface and a rear surface opposite to the active surface. The first solder pad is positioned and fixed on a center of the semiconductor chip. The first solder pad is sheet-shaped. The semiconductor chip is connected to the first solder pad with the active surface. A size of the first solder pad is smaller than a size of the semiconductor chip to expose a portion of the semiconductor chip. A manufacturing method of the semi-finished product of the power device and a manufacturing method of the power device are also provided.

Abstract: Embodiments described herein generally relate to compositions including discrete nanostructures (e.g., nanostructures including a functionalized graphene layer and a core species bound to the functionalized graphene layer), and related articles and methods. A composition may have a coefficient of friction of less than or equal to 0.02. Discrete nanostructures may have a substantially non-planar configuration. A core species may reversibly covalently bind a first portion of a functionalized graphene layer to a second portion of the functionalized graphene layer. Articles, e.g., articles including a plurality of discrete nanostructures and a means for depositing the plurality of discrete nanostructures on a surface, are also provided. Methods (e.g., methods of forming a layer) are also provided, including depositing a composition onto a substrate surface and/or applying a mechanical force to the composition, e.g., such that the composition exhibits a coefficient of friction of less than or equal to 0.02.

Abstract: The present invention provides a method for 3D waveform mapping of full-parallel structure, first, a 3D waveform mapping database is created according to the size of a 3D waveform image, the number of bits of probability value and the ADC's resolution of data acquisition module, then the 3D waveform mapping database is divided into Mt×Ma independent mapping storage areas along the time axis and the amplitude axis, and each independent mapping storage area is assigned a RAM, then RAMs are selected and addresses are calculated based on the sampling values and the structure of created 3D waveform mapping database, finally, parallel mappings are performed simultaneously on the time axis and the amplitude axis according to the selected RAMs and calculated addresses. Thus, the mapping time are shorten, especially in vector mapping mode, several RAMs are used for mapping, so the WCR of DSO is improved.

Abstract: A method of controlling speed of an internal combustion engine is disclosed. The method includes receiving a load parameter input. The method also includes determining a requested speed demand and detecting a change in load based on the load parameter input. The method also includes determining a modified speed demand based on the detected change in load, and modifying the requested speed demand to the modified speed demand.

Abstract: An aluminum alloy having about 0.03 wt % to about 0.50 wt % Niobium (Nb); about 0.03 wt % to about 0.50% Vanadium (V); about 0.03 wt % to about 0.50% Titanium (Ti), greater than 0 wt % to about 0.50 wt % Boron (B); and the balance is Aluminum (Al) and impurities. The alloy includes a weight percent ratio of (Nb+V)/Ti from about 1 to about 5, preferably from about 2 to about 3. The alloy may include a weight percent ratio (Nb+V+Ti)/B from about 1 to about 15, preferably from about 5 to about 10. The aluminum alloy may be form by incorporating 1 part master alloy, grain refiner, having about 1.5 wt % to about 4.0 wt % Niobium (Nb); from about 0.5 wt % to about 2.0% Titanium (Ti), and from about 0.2 wt % to about 0.8 wt % Boron (B) to about 27 to 80 part conventional aluminum alloy, by weight.

Abstract: A high-precision transient energy response prediction method for a complex structure, including: taking a time dependent term (formula I) of energy transfer between subsystems into account; establishing a transient power balance equation of each subsystem of the structure by combining with a loss factor matrix ? n of the complex structure; and given initial boundary parameters, adopting fourth-order and fifth-order Runge-Kutta algorithms to calculate transient energy response of each subsystem of the structure. The present invention establishes a more complete transient energy balance equation for each subsystem of the complex structure by taking the time dependent term of energy transfer between the subsystems of the complex structure into account, thereby significantly improving the prediction precision of the current transient statistical energy analysis method in the transient energy response prediction, and expanding the research scope of the current transient statistical energy analysis method.

Abstract: The invention relates to a pressure guide wire which comprises an insertion portion and an operation portion, wherein the insertion portion comprises a mandrel, a distal-end protective sleeve wrapping the distal end portion of the mandrel, a proximal-end protective sleeve wrapping the proximal end portion of the mandrel, an intermediate ring disposed between the distal-end protective sleeve and the proximal-end protective sleeve, which is fixedly sleeved on the mandrel and the outer surface of which is provided with a groove, and a pressure sensor disposed in the groove of the intermediate ring and connected with a plurality of sensing wires, which extends between the proximal-end protective sleeve and the mandrel and the other end of which is connected to the operation portion. The operation portion is used to transmit signals of the sensor to an external display device.

Abstract: A method and apparatus for controlling game applications are provided. In the method, when an operating system receives a game starting command, the operating system determines a manner to start a corresponding game application according to whether the game application has resided in a memory, and when a cold boot manner is used, the operating system triggers the game application to report an amount of memory required currently by the game application, and determines whether a requirement of running the game application is met according to the amount of memory required and an amount of memory currently used, or the operating system ensures to meet the requirement of running the game application through background application freezing and clearing.

Abstract: A plurality of openings is formed in a dielectric layer formed on a semiconductor substrate. The plurality of openings comprises a first opening extending to the semiconductor substrate, a second opening extending to a first depth that is substantially less than a thickness of the dielectric layer, and a third opening extending to a second depth that is substantially greater than the first depth. A multi-layer gate electrode is formed in the first opening. A thin resistor structure is formed in the second opening, and a connection structure is formed in the third opening, by filling the second and third openings substantially simultaneously with a resistor metal.

Abstract: A non-vascular lumen guide wire, comprising a mandrel (1) and a ball head (2) prepared with a metal material, wherein an outer diameter of the insertion end of the mandrel (1) is smaller than the outer diameter of the non-insertion end of the mandrel; the insertion end of the mandrel (1) is connected to the ball head (2), a plastic coating layer (3) is wrapped around the outer side of the mandrel (1), the outer diameter of the ball head (2) is larger than the outer diameter of the insertion end of the plastic coating layer (3), and the outer diameter of the ball head (2) is not larger than the non-insertion end of the plastic coating layer (3). The guide wire, by means of using a ball head (2) with a diameter slightly larger than the plastic coating layer (3) at a far end, may effectively avoid the defects that the guide wire falls off in actual use, or the plastic coating layer (3) at the far end easily rolls up when inserted.

Abstract: A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain in the substrate, a gate electrode disposed over the substrate between the source and drain. An inner spacer is disposed at least partially over the gate electrode. An outer spacer is disposed adjacent to a sidewall of the gate electrode.

Abstract: In an example of a method for increasing strength of an aluminum alloy, the aluminum alloy is formed in a molten state. The aluminum alloy includes from about 4 wt % to about 11 wt % silicon, from greater than 0.2 wt % to about 0.5 wt % chromium, from about 0.1 wt % to about 0.5 wt % magnesium, from about 0.01 wt % to about 0.1 wt % titanium, equal to or less than about 0.5 wt % iron, equal to or less than about 0.5 wt % manganese, and a balance of aluminum. The aluminum alloy is subjected to a solution heat treatment. The aluminum alloy is quenched, and the aluminum alloy is age hardened at an age hardening temperature ranging from about 140° C. to 175° C. for a time period ranging from about 3 hours to about 35 hours.

Abstract: Semiconductor devices and methods of forming the same are disclosed. A semiconductor device includes a substrate, a gate structure over the substrate, a spacer and a source/drain region. The gate structure is disposed over the substrate. The spacer is disposed on a sidewall of the gate structure, wherein the spacer has a top surface lower than a top surface of the gate structure. The source/drain region is disposed adjacent to a sidewall of the spacer.

Abstract: The invention relates to a seat length adjuster (3), especially for a vehicle seat, comprising at least: two rail pairs (10) arranged at a distance from each other, formed respectively by two rails, an upper rail (11) and a lower rail (12), wherein the upper rail is provided with openings (16) and the lower rail (12) has through holes (14), and at least one spring-loaded, movable locking member (21), which is held on the upper rail (11) and which blocks a movement of the upper rail (11) in the lower rail (12) in a locked position (VS), and which carries toothlike protrusions (15) on its two opposite lengthwise sides, which are movable from a released position (FS) into the locked position (VS) both into the openings (16) and into the through holes (14), wherein the locking member (21) secures the upper rail (11) and lower rail (12) in the locked position (VS), wherein the openings (16) and/or the through holes (14) have contact regions (K) for the toothlike protrusions (15) of the locking member (21) and

Abstract: The present invention provides a method for 3D waveform mapping of full-parallel structure, first, a 3D waveform mapping database is created according to the size of a 3D waveform image, the number of bits of probability value and the ADC's resolution of data acquisition module, then the 3D waveform mapping database is divided into Mt×Ma independent mapping storage areas along the time axis and the amplitude axis, and each independent mapping storage area is assigned a RAM, then RAMs are selected and addresses are calculated based on the sampling values and the structure of created 3D waveform mapping database, finally, parallel mappings are performed simultaneously on the time axis and the amplitude axis according to the selected RAMs and calculated addresses. Thus, the mapping time are shorten, especially in vector mapping mode, several RAMs are used for mapping, so the WCR of DSO is improved.