Abstract: Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, a first insulator region disposed below the semiconductor region, a first non-insulative region disposed below the first insulator region, a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, wherein the semiconductor region is disposed between the second non-insulative region and the third non-insulative region. In certain aspects, the semiconductor variable capacitor may include a second insulator region disposed above the semiconductor region and a second semiconductor region disposed above the second insulator region.

Abstract: Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, an insulative layer, and a first non-insulative region, the insulative layer being disposed between the semiconductor region and the first non-insulative region. In certain aspects, the semiconductor variable capacitor may also include a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, the second non-insulative region and the third non-insulative region having different doping types. In certain aspects, the semiconductor variable capacitor may also include an implant region disposed between the semiconductor region and the insulative layer. The implant region may be used to adjust the flat-band voltage of the semiconductor variable capacitor.

Abstract: Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.

Abstract: The present invention describes a method to shape and control acoustic and pressure waves through to the use of metasurfaces applied to the waves. In particular the present invention describes a method to make the use of metasurfaces, for long wavelength waves, like the sound and haptic waves, convenient and practical by up-converting to higher frequency the original signal. Ultrasonic waves reduce the size of the metastructures within the metasurfaces to become small enough to open new frontier in the control of acoustic and pressure waves. The metasurfaces can be made tunable to widen even more the possible applications for metasurface technologies.

Abstract: Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.

Abstract: Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, a first insulator region disposed below the semiconductor region, a first non-insulative region disposed below the first insulator region, a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, wherein the semiconductor region is disposed between the second non-insulative region and the third non-insulative region. In certain aspects, the semiconductor variable capacitor may include a second insulator region disposed above the semiconductor region and a second semiconductor region disposed above the second insulator region.

Abstract: In certain aspects, a variable capacitor comprises a well having a first side and a second side, an N+ diffusion abutted the well at the first side, a P+ diffusion abutted the well at the second side, and an insulator on the well. The variable capacitor further comprises a gate plate on the insulator having a first gate segment and a second gate segment, wherein the first gate segment and the second gate segment are configured to have different work functions.

Abstract: The present invention describes an autonomous building system capable of operating based on processing and analysis of collected data by means of Artificial Intelligence algorithms. The data can be gathered from within the system and/or from external networks. The autonomous building system will assist its users in every tasks from enhanced security to energy savings, from health monitoring and data collection to education, from financial assistance to social activities. In particular the described autonomous building is capable of making autonomous decisions and online purchases getting funds out of a dedicated financial account. The autonomous building may become the target of contextual advertising to promote products and/or services.

Abstract: Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a first semiconductor region; a first non-insulative region disposed adjacent to a first lateral side of the first semiconductor region; a second non-insulative region disposed adjacent to a second lateral side of the first semiconductor region, the second lateral side being opposite to the first lateral side; a second semiconductor region disposed adjacent to a third lateral side of the first semiconductor region, the second semiconductor region and the first semiconductor region having at least one of different doping types or different doping concentrations; an insulative layer adjacent to a top side of the first semiconductor region; and a third non-insulative region, the insulative layer being disposed between the third non-insulative region and the first semiconductor region.

Abstract: Techniques for reducing reflected reactance in a wireless power transfer system are provided. An example apparatus includes a resonant network including a variable reactance element, such that the resonant network is configured to resonant when the variable reactance element is at a resonant reactance value, a control circuit operably coupled to the variable reactance element and configured to determine a first reactance value and a second reactance value, such that an output of the PRU is the desired output when the variable reactance element is either the first reactance value or the second reactance value, and the first reactance value is below the resonant reactance value and the second reactance value is above the resonant reactance value, determine an indication of a source reactance associated with a wireless power source, and adjust the variable reactance element to either the first reactance value or the second reactance value based on the indication of the source reactance.

Abstract: Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, an insulative layer, and a first non-insulative region, the insulative layer being disposed between the semiconductor region and the first non-insulative region. In certain aspects, the semiconductor variable capacitor may also include a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, the second non-insulative region and the third non-insulative region having different doping types. In certain aspects, the semiconductor variable capacitor may also include an implant region disposed between the semiconductor region and the insulative layer. The implant region may be used to adjust the flat-band voltage of the semiconductor variable capacitor.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 mW and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module.

Abstract: An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1 W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 mW and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module.

Abstract: Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes an insulative layer, and a semiconductor region disposed adjacent to a first side of the insulative layer. The semiconductor capacitor also includes a first non-insulative region disposed adjacent to a second side of the insulative layer. In certain aspects, the semiconductor region may include a second non-insulative region, wherein the semiconductor region includes at least two regions having at least one of different doping concentrations or different doping types, and wherein one or more junctions between the at least two regions are disposed above or below the first non-insulative region.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: Certain aspects of the present disclosure provide a variable capacitor. The variable capacitor generally includes a semiconductor region, a dielectric layer disposed adjacent to the semiconductor region, and a first non-insulative region disposed above the dielectric layer, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, a doping concentration of the semiconductor region changes as a function of a distance across the semiconductor region from the dielectric layer or the second non-insulative region.

Abstract: In one aspect, an apparatus for wireless receiving power comprises a receive circuit configured to receive wireless power via a magnetic field sufficient to power or charge a load. The apparatus further comprises a tuning circuit comprising a variable reactive element, coupled to the receive circuit, and configured to detune the receive circuit away from a resonant frequency to adjust an output power level to a first output power level. The apparatus comprises a rectifier, comprising a switch, coupled to the receive circuit and configured to rectify an alternating current to a direct current for supplying power to the load. The apparatus comprises a drive circuit configured to actuate the switch when a current through the switch satisfies a first non-zero current value and adjust the first non-zero current value to a second non-zero value to adjust the first output power level to a second output power level.

Abstract: Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes an insulative layer, and a semiconductor region disposed adjacent to a first side of the insulative layer. The semiconductor capacitor also includes a first non-insulative region disposed adjacent to a second side of the insulative layer. In certain aspects, the semiconductor region may include a second non-insulative region, wherein the semiconductor region includes at least two regions having at least one of different doping concentrations or different doping types, and wherein one or more junctions between the at least two regions are disposed above or below the first non-insulative region.

Abstract: Techniques for reducing reflected reactance in a wireless power transfer system are provided. An example apparatus includes a resonant network including a variable reactance element, such that the resonant network is configured to resonant when the variable reactance element is at a resonant reactance value, a control circuit operably coupled to the variable reactance element and configured to determine a first reactance value and a second reactance value, such that an output of the PRU is the desired output when the variable reactance element is either the first reactance value or the second reactance value, and the first reactance value is below the resonant reactance value and the second reactance value is above the resonant reactance value, determine an indication of a source reactance associated with a wireless power source, and adjust the variable reactance element to either the first reactance value or the second reactance value based on the indication of the source reactance.