Abstract: Certain aspects of the present disclosure generally relate to techniques for adjusting or setting a capacitance-versus-voltage (C-V) characteristic of a variable capacitor. For example, certain aspects of the present disclosure provide a capacitor device. The capacitor device generally includes a first variable capacitor and a second variable capacitor, each comprising a first terminal and a second terminal. In certain aspects, the second terminal of the second variable capacitor is coupled to the first terminal of the first variable capacitor, and the first terminal of the first variable capacitor is coupled to at least one biasing voltage node. In some cases, a decoupling capacitor may be coupled to the first terminal of the first variable capacitor.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: An apparatus for wirelessly receiving power via a wireless field generated by a transmitter includes a resonator configured to generate electrical current to power or charge a load based on a voltage induced in the resonator in response to the wireless field, a first variable capacitor electrically coupled to the resonator and configured to adjust a first capacitance of the first variable capacitor responsive to a first control signal, a second variable capacitor electrically coupled to the resonator and configured to adjust a second capacitance of the second variable capacitor responsive to a second control signal, and a control circuit configured to adjust and apply the first control signal and the second control signal to the first variable capacitor and the second variable capacitor, respectively, to adjust a resonant frequency of the resonator and a voltage output to the load based on an electrical characteristic indicative of a level of power output to the load.

Abstract: A novel semiconductor transistor is presented. The semiconductor structure has a MOSFET like structure, with the difference that the device channel is formed in an intrinsic region, so as to effectively decrease the impurity and surface scattering phenomena deriving from a high doping profile typical of conventional MOS devices. Due to the presence of the un-doped channel region, the proposed structure greatly reduces Random Doping Fluctuation (RDF) phenomena decreasing the threshold voltage variation between different devices. In order to control the threshold voltage of the device, a heavily doped poly-silicon or metallic gate is used. However, differently from standard CMOS devices, a high work-function metallic material, or a heavily p-doped poly-silicon layer, is used for an n-channel device and a low work-function metallic material, or heavily n-doped poly-silicon layer, is used for a p-channel FET. Doped or insulating regions are used to increase the control on the channel conductivity.

Abstract: A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a MOS configuration with a drift region and an additional gate that modulates the carrier density in the drift region, so that the control on the carrier transport is enhanced and the specific on-resistance per area is reduced. This characteristic enables the use of short gate lengths while maintaining the electric field under the gate within reasonable values in high voltage applications, without increasing the device on-resistance. It offers the advantage of extremely lower on-resistance for the same silicon area while improving on its dynamic performances with respect to the standard CMOS technology. Another inherent advantage is that the switching gate losses are smaller due to lower VGS voltages required to operate the device.

Abstract: Aspects of this disclosure include apparatus and methods for receiving power wirelessly and communicating wirelessly at low power levels. One aspect of an apparatus that wirelessly receives power may be characterized by an impedance having a reactance component and the apparatus comprises an antenna circuit, and a control circuit. The antenna circuit is configured to receive inductive power from a magnetic field generated by a power transmitter. The antenna circuit is also configured to communicate with the power transmitter. The control circuit is coupled to the antenna circuit and is configured to vary the reactance component of the impedance to a level sufficient for allowing detection as communication from the antenna circuit by the power transmitter.

Abstract: Techniques for tuning a resonant network are discussed. An example apparatus for controlling an output parameter with a resonant network comprising a differential-series circuit with a first variable reactive element on a first branch of the differential-series circuit and a second variable reactive element on a second branch of the differential-series circuit, such that the resonant network is coupled to an output circuit. The apparatus includes a common control element operably coupled to the first variable reactive element and the second variable reactive element, and a control circuit operably coupled to the output circuit and the common control element and configured to vary an impedance of the resonant network based on a value of the output parameter in the output circuit.

Abstract: Techniques for controlling a resonant network are disclosed. An example of an apparatus for varying capacitance in a resonant network includes a variable capacitor circuit configured to vary a capacitance in response to a control signal, at least one biasing component operably coupled to the variable capacitor circuit, and a control circuit configured to generate the control signal, such that the control signal includes a first tuning value corresponding to a first capacitance value, and output the control signal at the first tuning value to reduce an impedance of the at least one biasing component and vary the capacitance of the variable capacitor circuit, such that the impedance of the at least one biasing component subsequently increases when the first capacitance value is realized.

Abstract: Resonant rectifier topologies are described for tuning the rectifier so that it performs from an electromagnetic interference (EMI) point of view, while maintaining the voltage regulation at the output that a series tuned rectifier would maintain. Examples include a an inductor of a receive coupler and a rectifier connectable to drive a load, along with first and second filter elements that are each configured to provide an impedance inversion function in a frequency band and that are connected in series between the inductor of a receive coupler and rectifier. In one set of examples, both filter elements are implemented as pair filters, while in other examples the first filter element includes the inductor of a receive coupler in parallel with a capacitance connected to ground.

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.

Abstract: The present invention describes a semiconductor interferometric device capable of modulating an electromagnetic wave by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical properties inside the semiconductor material leading to a shift of the reflected and absorbed spectrums. One or more rays are generated within the device so as to operate the device through interference effects. The present invention may be utilized for an antenna or for beam steering purposes comprising an array of semiconductor interferometric reflecting devices. Furthermore the same principle could be utilized to generate tunable meta-surfaces, so as to modulate phase, amplitude or polarization of an incident electromagnetic wave.

Abstract: Methods and apparatus are disclosed for wirelessly receiving power. In one aspect, an apparatus for wireless receiving power is provided. The apparatus comprises a receive circuit configured to receive wireless power via a magnetic field sufficient to power or charge a load. The apparatus further comprises a synchronous rectifier electrically coupled to the receive circuit, the synchronous rectifier comprising a switch and configured to rectify an alternating current (AC) signal, generated in the receive circuit, to a direct current (DC) signal for supplying power to the load. The apparatus further comprises a controller configured to, during a period when an input voltage level of the synchronous rectifier is higher than an output voltage level of the synchronous rectifier, adjust a conduction angle of the switch at a first frequency substantially in phase with a frequency of the AC signal to adjust an output power to the load.

Abstract: The present invention describes a semiconductor interferometric reflecting device capable of modulating the reflected light by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical optical properties inside the semiconductor material leading to a shift of the reflected and absorbed light spectrums. The modulating layer is fabricated on an optically smooth substrate, i.e., sufficiently smooth to allow for the occurrence of interference effects. Furthermore, if desired, the same device can be designed to emit or reflect the desired light. The present invention may be utilized for a reflective flat panel display comprising an array of semiconductor interferometric reflecting devices.

Abstract: A novel semiconductor transistor is presented. The semiconductor structure has a MOSFET like structure, with the difference that the device channel is formed in an intrinsic region, so as to effectively decrease the impurity and surface scattering phenomena deriving from a high doping profile typical of conventional MOS devices. Due to the presence of the un-doped channel region, the proposed structure greatly reduces Random Doping Fluctuation (RDF) phenomena decreasing the threshold voltage variation between different devices. In order to control the threshold voltage of the device, a heavily doped poly-silicon or metallic gate is used. However, differently from standard CMOS devices, a high work-function metallic material, or a heavily p-doped poly-silicon layer, is used for an n-channel device and a low work-function metallic material, or heavily n-doped poly-silicon layer, is used for a p-channel FET. Doped or insulating regions are used to increase the control on the channel conductivity.

Abstract: An apparatus for wirelessly receiving power via a wireless field generated by a transmitter includes a resonator configured to generate electrical current to power or charge a load based on a voltage induced in the resonator in response to the wireless field, a controller configured to receive a synchronization timing reference signal based on a derivative of the voltage induced in the resonator, the controller configured to generate a rectifier control signal based on the synchronization timing reference signal, and a synchronous rectifier configured to switch responsive to the rectifier control signal.

Abstract: An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1 W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 mW and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module.

Abstract: An apparatus for wirelessly receiving power via a wireless field generated by a transmitter includes a resonator configured to generate electrical current to power or charge a load based on a voltage induced in the resonator in response to the wireless field, at least one variable capacitor electrically coupled to the resonator and configured to adjust a first capacitance of the at least one variable capacitor responsive to a first control signal, and a control circuit configured to adjust and apply the first control signal to the at least one variable capacitor to simultaneously adjust a resonant frequency of the resonator and a current output to the load based on an electrical characteristic indicative of a level of power output to the load.

Abstract: An apparatus for wirelessly receiving power via a wireless field generated by a transmitter includes a resonator configured to generate electrical current to power or charge a load based on a voltage induced in the resonator in response to the wireless field, a first variable capacitor electrically coupled to the resonator and configured to adjust a first capacitance of the first variable capacitor responsive to a first control signal, a second variable capacitor electrically coupled to the resonator and configured to adjust a second capacitance of the second variable capacitor responsive to a second control signal, and a control circuit configured to adjust and apply the first control signal and the second control signal to the first variable capacitor and the second variable capacitor, respectively, to adjust a resonant frequency of the resonator and a voltage output to the load based on an electrical characteristic indicative of a level of power output to the load.

Abstract: Resonant rectifier topologies are described for tuning the rectifier so that it performs from an electromagnetic interference (EMI) point of view, while maintaining the voltage regulation at the output that a series tuned rectifier would maintain. Examples include a an inductor of a receive coupler and a rectifier connectable to drive a load, along with first and second filter elements that are each configured to provide an impedance inversion function in a frequency band and that are connected in series between the inductor of a receive coupler and rectifier. In one set of examples, both filter elements are implemented as pair filters, while in other examples the first filter element includes the inductor of a receive coupler in parallel with a capacitance connected to ground.