Abstract: An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 mW and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module.

Abstract: In one aspect, an apparatus for wireless receiving power comprises a receive circuit configured to receive wireless power via a magnetic field sufficient to power or charge a load. The apparatus further comprises a tuning circuit comprising a variable reactive element, coupled to the receive circuit, and configured to detune the receive circuit away from a resonant frequency to adjust an output power level to a first output power level. The apparatus comprises a rectifier, comprising a switch, coupled to the receive circuit and configured to rectify an alternating current to a direct current for supplying power to the load. The apparatus comprises a drive circuit configured to actuate the switch when a current through the switch satisfies a first non-zero current value and adjust the first non-zero current value to a second non-zero value to adjust the first output power level to a second output power level.

Abstract: The present invention describes means to intentionally transmit power wirelessly from a portable communication device like a mobile phone, smart-phone, tablet or telephone watch using radio frequency, ultrasound, microwave or laser technologies to power up or charge devices external to the portable communication device. In particular the wireless power transmitter is physically placed inside the portable communication device or coupled to it, in order to have a means to transfer power without wires or cables to other devices. The present invention may be utilized in applications like sensors, implanted devices for medical use, speakers, mouse, keyboard, electrical glasses for 3D viewing, small displays, gadgets in the car, electronic toys and so on.

Abstract: An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1 W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 milliwatts and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module.

Abstract: A novel semiconductor transistor is presented. The semiconductor structure has a gate region forming a channel with repetitive patterns in the direction perpendicular to the current flow, so that the portion of its channel that is not strictly planar contributes to a significant reduction of the silicon area occupied by the device. It offers the advantage of lower on-resistance for the same silicon area while improving on its dynamic performances. The additional cost to shape the channel region of the device in periodic repetitive patterns is minimum, which makes the present invention easy to implement in any conventional CMOS process technology and very cost effective.

Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal.

Abstract: A novel method to provide power management to a radio frequency amplifier is described. The method makes use of a DC-AC resonant switching power converter, a resonant tunable network and a rectifier to track the envelope signal of a radio amplifier system. This system provides a fast, efficient and clean supply to the radio frequency amplifier. The resonant power converter may be implemented with a class E inverter. The resonant power converter may be operated efficiently by switching at zero voltage switching or zero current switching. By operating the resonant switching power converter at the same frequency of the radio frequency amplifier, the spectrum of the power converter is immune from undesired harmonics while meeting the bandwidth requirement. By adaptively tuning the tunable resonant network, the output voltage of the rectifier is controlled to track the envelope signal.

Abstract: A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a FET structure, where multiple channels and multiple gate regions are formed in order to achieve a lower specific on-resistance, and a higher control on the transport properties of the device. No dielectric layer is present between gate electrodes and device channels, decreasing the parasitic capacitance associated with the gate terminal. The fabrication of the device does not require Silicon On Insulator techniques and it is not limited to Silicon semiconductor materials. It can be fabricated as an enhancement or depletion device with much more control on the threshold voltage of the device, and with superior RF performance.

Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal.

Abstract: The present invention describes a semiconductor interferometric reflecting device capable of modulating the reflected light by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical optical properties inside the semiconductor material leading to a shift of the reflected and absorbed light spectrums. The modulating layer is fabricated on an optically smooth substrate, i.e., sufficiently smooth to allow for the occurrence of interference effects. Furthermore, if desired, the same device can be designed to emit or reflect the desired light. The present invention may be utilized for a reflective flat panel display comprising an array of semiconductor interferometric reflecting devices.

Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal.

Abstract: A novel semiconductor transistor is presented. The semiconductor structure has a gate region forming a channel with repetitive patterns in the direction perpendicular to the current flow, so that the portion of its channel that is not strictly planar contributes to a significant reduction of the silicon area occupied by the device. It offers the advantage of lower on-resistance for the same silicon area while improving on its dynamic performances. The additional cost to shape the channel region of the device in periodic repetitive patterns is minimum, which makes the present invention easy to implement in any conventional CMOS process technology and very cost effective.

Abstract: The present invention describes means to intentionally transmit power wirelessly from a portable communication device like a mobile phone, smart-phone, tablet or telephone watch using radio frequency, ultrasound, microwave or laser technologies to power up or charge devices external to the portable communication device. In particular the wireless power transmitter is physically placed inside the portable communication device or coupled to it, in order to have a means to transfer power without wires or cables to other devices. The present invention may be utilized in applications like sensors, implanted devices for medical use, speakers, mouse, keyboard, electrical glasses for 3D viewing, small displays, gadgets in the car, electronic toys and so on.

Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable capacitor with MOS compatible structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the capacitance value between the other two terminals of the device, by increasing or decreasing its DC voltage with respect to one of the main terminals of the device. Furthermore, the present invention decouples the AC signal and the DC control voltage preventing distortion of the RF signal. The present invention describes a controllable capacitor whose capacitance value is not necessarily linear with its control voltage, but although possibly abrupt in its characteristic, is utilized to manufacture a semiconductor variable capacitor with digital control to improve its noise and linearity performance while maintaining high quality factor.

Abstract: An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 mW and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module.

Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal.

Abstract: A novel method to synchronize the switching frequency of hysteretic power converters is presented. The method includes the generation of a clock signal and the injection of a periodic disturbance signal operating at the frequency of the generated clock in the main loop of the converter to synchronize the hysteretic power converter to switch at the frequency of the clock. The presented approach provides significant advantages with respect to the more traditional means of utilizing Frequency Lock Loop, Phase Lock Loop or Delay Lock Loop circuits, mainly for its simplicity, faster locking and much reduced phase error. The switching frequency can be higher or lower than the free running frequency of the power converter provided that the free running frequency is close enough to the desired switching frequency. The method is presented for buck and boost hysteretic high frequency switching power converters.

Abstract: A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable capacitor with MOS compatible structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the capacitance value between the other two terminals of the device, by increasing or decreasing its DC voltage with respect to one of the main terminals of the device. Furthermore, the present invention decouples the AC signal and the DC control voltage preventing distortion of the RF signal. The present invention describes a controllable capacitor whose capacitance value is not necessarily linear with its control voltage, but although possibly abrupt in its characteristic, is utilized to manufacture a semiconductor variable capacitor with digital control to improve its noise and linearity performance while maintaining high quality factor.

Abstract: The present invention describes a hybrid integrated circuit comprising both CMOS and III-V devices, monolithically integrated in a single chip. It allows the almost complete elimination of the contamination issues related to the integration of different technologies, maintaining at the same time a good planarization of the structure. It further simplifies the fabrication process, allowing the growth of high quality III-V materials on (100) silicon substrates lowering the manufacturing cost. Moreover, differently from many prior art attempts, it does not require silicon on insulator technologies and/or other expensive process steps. This invention enables the consolidation on the same integrated circuit of a hybrid switching power converter that takes advantage of the established circuit topologies of CMOS circuitries and of the higher mobility and voltage withstanding of III-V HEMT devices.

Abstract: A novel semiconductor transistor is presented. The semiconductor structure has a MOSFET like structure, with the difference that the device channel is formed in an intrinsic region, so as to effectively decrease the impurity and surface scattering phenomena deriving from a high doping profile typical of conventional MOS devices. Due to the presence of the un-doped channel region, the proposed structure greatly reduces Random Doping Fluctuation (RDF) phenomena decreasing the threshold voltage variation between different devices. In order to control the threshold voltage of the device, a heavily doped poly-silicon or metallic gate is used. However, differently from standard CMOS devices, a high work-function metallic material, or a heavily p-doped poly-silicon layer, is used for a n-channel device and a low work-function metallic material, or heavily n-doped poly-silicon layer, is used for a p-channel FET.