Abstract: A method of data collection for a vehicle includes defining a vehicle build configuration based on individual build configurations of one or more vehicle systems, and defining a data acquisition definition file at a data collection and reporting hub based on the vehicle build configuration. The data acquisition definition file includes parameters and measurements to be performed by a data acquisition system located at the vehicle. The data acquisition definition file is requested by the data acquisition system and the data acquisition definition file is communicated to the data acquisition system via a two way electronic communication link between the data collection and reporting hub following the request from the data acquisition system. Vehicle data is collected at the data acquisition system based on the data acquisition definition file.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. Layers of a CEM to form a correlated electron switch (CES) device may be disposed between layers of electrode material. In an embodiment, one or more techniques may be employed to remove and/or neutralize parasitic features and/or devices introduced during manufacture of the CEM device.

Abstract: A power splitter that amplifies an input radio-frequency (RF) signal. The power splitter uses a single transistor in a common emitter stage of a cascode amplifier and two or more common base stages of the cascode amplifier to amplify and to split the input RF signal. A common base biasing signal can be used to simultaneously enable two or more of the common base stages to generate two or more amplified RF output signals.

Abstract: Disclosed is a method for the fabrication of a correlated electron material (CEM) device to an comprising: forming a layer of a conductive substrate on a substrate; forming a layer of a correlated electron material on the layer of conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; patterning these layers to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay on the substrate; forming a cover layer of an insulating material over the stack; and patterning the cover layer wherein: the patterning of the cover layer comprises etching a via in the cover layer whereby to expose a part of the upper surface of the conductive overlay and etching a trench in the cover layer such that the trench surrounds the via.

Abstract: A device for producing a pattern combination on a clothing includes the following: a rotary screen, a cylindrical jacket surface with a perforation pattern that defines a first pattern component. Material in the liquid or pasty state is pressed through the perforations of the jacket surface of the rotary screen and deposited on the surface of the clothing in order to produce the first pattern component on a surface of the clothing, while the rotary screen, rotating several times about a longitudinal axis thereof, rolls on the surface of the clothing in at least one path that continuously revolves on the surface of the clothing at least once. At least one device produces, synchronously and/or simultaneously, a second pattern component, which device is connected indirectly or directly to the rotary screen. The device for producing the pattern combination also includes a post-run system.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments a method may include forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed. A sealing layer may be deposited over the structure and over at least a portion of the exposed second portion of the substrate. A conductive via may be formed by way of a dry etch through the sealing layer to contact the exposed metal layer. In embodiments, an etch-stop control layer may be utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may include removing of an exposed portion of a CEM film to form an exposed sidewall region bordering a remaining unexposed portion of the CEM film under or beneath a conductive overlay. The method may further include at least partially restoring properties of the exposed sidewall region to a CEM via exposure of the exposed sidewall region to one or more gaseous annealing agents.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region from resputtered CEM occurring during a physical etch of a CEM film.

Abstract: A device for producing a pattern combination on a clothing includes the following: a rotary screen, a cylindrical jacket surface with a perforation pattern that defines a first pattern component. Material in the liquid or pasty state is pressed through the perforations of the jacket surface of the rotary screen and deposited on the surface of the clothing in order to produce the first pattern component on a surface of the clothing, while the rotary screen, rotating several times about a longitudinal axis thereof, rolls on the surface of the clothing in at least one path that continuously revolves on the surface of the clothing at least once. At least one device produces, synchronously and/or simultaneously, a second pattern component, which device is connected indirectly or directly to the rotary screen. The device for producing the pattern combination also includes a post-run system.

Abstract: Disclosed is a method for the fabrication of a correlated electron material (CEM) device comprising: forming a layer of a conductive substrate on a substrate; forming a layer of a correlated electron material on the layer of conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; patterning these layers to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay, on the substrate; forming a cover layer of an insulating material over the stack; and patterning the cover layer wherein: the patterning of the cover layer comprises etching a trench in the cover layer whereby to expose the conductive overlay; and the method further comprises treating the exposed conductive overlay to remove an oxidation layer there from.

Abstract: A detachable electrical device can be formed from a kit comprising a pair of component parts adapted for connection to each other, wherein the connected components of the device may be subsequently disconnected, comprising: an array of electrical connectors, each electrical connector comprising an electrically conductive liquid; and an array of electrodes; wherein the arrays can be brought into contact with each other so as to provide a plurality of electrical connections between the electrically conductive liquid of the array of electrical connectors and the electrodes of the array of electrodes, and wherein the electrical connections may be subsequently broken by detaching the electrically conductive liquid from the electrodes of the array.

Abstract: A system and method of predicting the impact of forecasted weather, environmental, and geologic events (that include one or more weather/environmental/geologic conditions) by determining a recurrence interval of each past condition in each location, determining the correlation between the past condition and the observable impact of the past event, calculating a predicted observable impact of each past event, calculating a predicted impact of each past event recurring by multiplying the predicted observable impact of the past event by the recurrence interval of the past condition, grouping the past events into a plurality of groups based on the predicted impact of the past condition recurring, determining a threshold for each group, receiving forecasted conditions, and determining the predicted impact of the forecasted conditions by comparing the forecasted conditions with the thresholds.

Abstract: A system and method of predicting the financial impact of environmental or geologic events (that include one or more environmental or geologic conditions) by determining a recurrence interval of each past condition in each location, determining the correlation between the past condition and the observable financial impact of the past event, calculating a predicted observable financial impact of each past event, calculating a predicted financial impact of each past event recurring by multiplying the predicted observable financial impact of the past event by the recurrence interval of the past condition, grouping the past events into a plurality of groups based on the predicted financial impact of the past condition recurring, determining a threshold for each group, identifying current or forecasted conditions, and determining the predicted financial impact of the current or forecasted conditions by comparing the current or forecasted conditions with the thresholds.

Abstract: Latch mechanisms adapted to prevent unauthorized displacement of a latch bolt from an extended, locked position to a retracted, unlocked position. The latch mechanisms prevent the failure of a latch bolt of one latch mechanism to return to an extended lock position from interfering with the ability of a latch bolt of an inter-related latch mechanism from being able to return to an extended, locked position. Further embodiments provide a mounting bracket mounted to a door to allow the associated latch mechanism to be indirectly secured to the door. Additionally, the mounting bracket may have a plurality of mounting orifices that allow the mounting bracket to be used with a wide range of latch mechanisms, as well as provide adjustable attachment of the latch mechanism to the mounting bracket.

Abstract: Disclosed is a method for the fabrication of a correlated electron material (CEM) switching device, the method comprising: forming a layer of a conductive substrate; forming a layer of a correlated electron material on the conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; and patterning the layers whereby to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay, wherein the patterning comprises the following steps: forming a hard mask on the layer of the conductive overlay; dry etching the layer of conductive overlay and the layer of correlated electron material whereby to form a partially formed stack; depositing a coating of a protective polymer over at least sidewalls of the partially formed stack; and dry etching the layer of conductive substrate.

Abstract: Disclosed is a method for the fabrication of a correlated electron material (CEM) switching device, the method comprising: forming a layer of a conductive substrate; forming a layer of a correlated electron material on the conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; and patterning the layers whereby to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay, wherein the patterning comprises the following steps: forming a hard mask on the layer of the conductive overlay; dry etching the layer of conductive overlay and the layer of correlated electron material whereby to form a partially formed stack; depositing a coating of a protective polymer over at least sidewalls of the partially formed stack; and dry etching the layer of conductive substrate.

Abstract: Disclosed is a method for the fabrication of a correlated electron material (CEM) device comprising: forming a layer of a conductive substrate on a substrate; forming a layer of a correlated electron material on the layer of conductive substrate; forming a layer of a conductive overlay on the layer of correlated electron material; patterning these layers to form a stack comprising a conductive substrate, a CEM layer and a conductive overlay, on the substrate; forming a cover layer of an insulating material over the stack; and patterning the cover layer wherein: the patterning of the cover layer comprises etching a trench in the cover layer whereby to expose the conductive overlay; and the method further comprises treating the exposed conductive overlay to remove an oxidation layer there from.

Abstract: In a portable radio transceiver, a power amplifier system includes a saturation detector that detects power amplifier saturation in response to duty cycle of the amplifier transistor collector voltage waveform. The saturation detection output signal can be used by a power control circuit to back off or reduce the amplification level of the power amplifier to avoid power amplifier control loop saturation.