Patents by Inventor Pei-Yu Chou

Pei-Yu Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230386848
    Abstract: A method includes forming a dummy gate stack on a semiconductor fin, forming gate spacers on sidewalls of the dummy gate stack, forming a first inter-layer dielectric, with the gate spacers and the dummy gate stack being in the first inter-layer dielectric, removing the dummy gate stack to form a trench between the gate spacers, forming a replacement gate stack in the trench, and depositing a dielectric capping layer. A bottom surface of the dielectric capping layer contacts a first top surface of the replacement gate stack and a second top surface of the first inter-layer dielectric. A second inter-layer dielectric is deposited over the dielectric capping layer. A source/drain contact plug is formed and extends into the second inter-layer dielectric, the dielectric capping layer, and the first inter-layer dielectric.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 30, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Pei-Yu Chou, Tze-Liang Lee
  • Publication number: 20230387228
    Abstract: A semiconductor device a method of forming the same are provided. A semiconductor device includes a gate stack over a substrate. A first dielectric layer is over the gate stack. The first dielectric layer includes a first material. A second dielectric layer is over the first dielectric layer. The second dielectric layer includes a second material different from the first material. A first conductive feature is adjacent the gate stack. A second conductive feature is over and in physical contact with a topmost surface of the first conductive feature. A bottommost surface of the second conductive feature is in physical contact with a topmost surface of the second dielectric layer.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 30, 2023
    Inventors: Pei-Yu Chou, Jr-Hung Li, Tze-Liang Lee
  • Publication number: 20230335498
    Abstract: An interconnection structure includes a first conductive feature disposed in a dielectric material, a first etch stop layer disposed over the dielectric material, a first dielectric layer disposed over the first etch stop layer, and a second conductive feature extending through the first dielectric layer and the first etch stop layer and in electrical contact with the first conductive feature. The first etch stop layer includes a boron-based layer, and an oxygen-rich boron-containing layer in contact with the boron-based layer.
    Type: Application
    Filed: April 18, 2022
    Publication date: October 19, 2023
    Inventors: Pei-Yu CHOU, Yu-Lien HUANG, Tze-Liang LEE
  • Publication number: 20230327021
    Abstract: A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.
    Type: Application
    Filed: June 16, 2023
    Publication date: October 12, 2023
    Inventors: Chao-Hsun Wang, Chen-Ming Lee, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen
  • Publication number: 20230299136
    Abstract: A semiconductor device including an etch stop layer and a method of forming is provided. The semiconductor device may include a source/drain region and a gate structure, wherein a first etch stop layer is over a conductive plug to a source/drain region and a second etch stop layer is over the gate structure. The first etch stop layer and the second etch stop layer may have different thicknesses. A dielectric layer may be formed over the first etch stop layer and the second etch stop layer, and contacts may be formed through the dielectric layer and the first and second etch stop layers.
    Type: Application
    Filed: March 21, 2022
    Publication date: September 21, 2023
    Inventors: Pei-Yu Chou, Tze-Liang Lee
  • Publication number: 20230268347
    Abstract: A semiconductor device includes a plurality of semiconductor fins, at least one gate stack, a refill isolation, and an air gap. Each of the semiconductor fins extends in an X direction. Two adjacent ones of the semiconductor fins are spaced apart from each other in a Y direction transverse to the X direction. The at least one gate stack has two stack sections spaced apart from each other in the Y direction. The stack sections are disposed over two adjacent ones of the semiconductor fins, respectively. The refill isolation and the air gap are disposed between the stack sections.
    Type: Application
    Filed: April 27, 2023
    Publication date: August 24, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pei-Yu CHOU, Yi-Ting FU, Ting-Gang CHEN, Tze-Liang LEE
  • Publication number: 20230207670
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate, wherein semiconductor strips are located between the isolation regions, and forming a dielectric dummy strip between the isolation regions, recessing the isolation regions. Some portions of the semiconductor strips protrude higher than top surfaces of the recessed isolation regions to form protruding semiconductor fins, and a portion of the dielectric dummy strip protrudes higher than the top surfaces of the recessed isolation regions to form a dielectric dummy fin. The method further includes etching the dielectric dummy fin so that a top width of the dielectric dummy fin is smaller than a bottom width of the dielectric dummy fin. A gate stack is formed on top surfaces and sidewalls of the protruding semiconductor fins and the dielectric dummy fin.
    Type: Application
    Filed: March 3, 2023
    Publication date: June 29, 2023
    Inventors: Shih-Yao Lin, Pei-Hsiu Wu, Chih Ping Wang, Chih-Han Lin, Jr-Jung Lin, Yun Ting Chou, Chen-Yu Wu
  • Patent number: 11682729
    Abstract: A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Hsun Wang, Chen-Ming Lee, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen
  • Publication number: 20230170397
    Abstract: A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.
    Type: Application
    Filed: January 30, 2023
    Publication date: June 1, 2023
    Inventors: Chia-Ming HSU, Pei-Yu CHOU, Chih-Pin TSAO, Kuang-Yuan HSU, Jyh-Huei CHEN
  • Patent number: 11652106
    Abstract: A semiconductor device includes a plurality of semiconductor fins, at least one gate stack, a refill isolation, and an air gap. Each of the semiconductor fins extends in an X direction. Two adjacent ones of the semiconductor fins are spaced apart from each other in a Y direction transverse to the X direction. The at least one gate stack has two stack sections spaced apart from each other in the Y direction. The stack sections are disposed over two adjacent ones of the semiconductor fins, respectively. The refill isolation and the air gap are disposed between the stack sections.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: May 16, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pei-Yu Chou, Yi-Ting Fu, Ting-Gang Chen, Tze-Liang Lee
  • Publication number: 20230043635
    Abstract: A method includes forming a gate structure over a substrate; forming a source/drain region adjacent the gate structure; forming a first interlayer dielectric (ILD) over the source/drain region; forming a contact plug extending through the first ILD that electrically contacts the source/drain region; forming a silicide layer on the contact plug; forming a second ILD extending over the first ILD and the silicide layer; etching an opening extending through the second ILD and the silicide layer to expose the contact plug, wherein the silicide layer is used as an etch stop during the etching of the opening; and forming a conductive feature in the opening that electrically contacts the contact plug.
    Type: Application
    Filed: March 14, 2022
    Publication date: February 9, 2023
    Inventors: Pei-Yu Chou, Chia-Ming Hsu, Tze-Liang Lee
  • Patent number: 11569362
    Abstract: A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: January 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ming Hsu, Pei-Yu Chou, Chih-Pin Tsao, Kuang-Yuan Hsu, Jyh-Huei Chen
  • Publication number: 20230022101
    Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.
    Type: Application
    Filed: July 23, 2021
    Publication date: January 26, 2023
    Inventors: PEI-YU CHOU, TZE-LIANG LEE
  • Publication number: 20220359515
    Abstract: A semiconductor device includes a plurality of semiconductor fins, at least one gate stack, a refill isolation, and an air gap. Each of the semiconductor fins extends in an X direction. Two adjacent ones of the semiconductor fins are spaced apart from each other in a Y direction transverse to the X direction. The at least one gate stack has two stack sections spaced apart from each other in the Y direction. The stack sections are disposed over two adjacent ones of the semiconductor fins, respectively. The refill isolation and the air gap are disposed between the stack sections.
    Type: Application
    Filed: May 6, 2021
    Publication date: November 10, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pei-Yu CHOU, Yi-Ting FU, Ting-Gang CHEN, Tze-Liang LEE
  • Publication number: 20220223422
    Abstract: A method includes forming a dummy gate stack on a semiconductor fin, forming gate spacers on sidewalls of the dummy gate stack, forming a first inter-layer dielectric, with the gate spacers and the dummy gate stack being in the first inter-layer dielectric, removing the dummy gate stack to form a trench between the gate spacers, forming a replacement gate stack in the trench, and depositing a dielectric capping layer. A bottom surface of the dielectric capping layer contacts a first top surface of the replacement gate stack and a second top surface of the first inter-layer dielectric. A second inter-layer dielectric is deposited over the dielectric capping layer. A source/drain contact plug is formed and extends into the second inter-layer dielectric, the dielectric capping layer, and the first inter-layer dielectric.
    Type: Application
    Filed: March 3, 2021
    Publication date: July 14, 2022
    Inventors: Pei-Yu Chou, Tze-Liang Lee
  • Publication number: 20220216147
    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.
    Type: Application
    Filed: March 23, 2022
    Publication date: July 7, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Yu Chou, Jr-Hung Li, Liang-Yin Chen, Su-Hao Liu, Tze-Liang Lee, Meng-Han Chou, Kuo-Ju Chen, Huicheng Chang, Tsai-Jung Ho, Tzu-Yang Ho
  • Publication number: 20220140142
    Abstract: A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.
    Type: Application
    Filed: January 14, 2022
    Publication date: May 5, 2022
    Inventors: Chao-Hsun Wang, Chen-Ming Lee, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen
  • Publication number: 20220123115
    Abstract: A semiconductor device a method of forming the same are provided. A semiconductor device includes a gate stack over a substrate. A first dielectric layer is over the gate stack. The first dielectric layer includes a first material. A second dielectric layer is over the first dielectric layer. The second dielectric layer includes a second material different from the first material. A first conductive feature is adjacent the gate stack. A second conductive feature is over and in physical contact with a topmost surface of the first conductive feature. A bottommost surface of the second conductive feature is in physical contact with a topmost surface of the second dielectric layer.
    Type: Application
    Filed: March 5, 2021
    Publication date: April 21, 2022
    Inventors: Pei-Yu Chou, Jr-Hung Li, Tze-Liang Lee
  • Patent number: 11289417
    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Yu Chou, Jr-Hung Li, Liang-Yin Chen, Su-Hao Liu, Tze-Liang Lee, Meng-Han Chou, Kuo-Ju Chen, Huicheng Chang, Tsai-Jung Ho, Tzu-Yang Ho
  • Patent number: 11227950
    Abstract: A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.
    Type: Grant
    Filed: September 16, 2019
    Date of Patent: January 18, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Hsun Wang, Chen-Ming Lee, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen