Abstract: A system includes first, second, and third circuits and first and second capacitors. The first capacitor has a first power supply terminal coupled to positive power supply terminal, a second power supply terminal, and an input/output. The second capacitor has a first power supply terminal coupled the second power supply terminal of the first circuit, a second power supply terminal, and an input/output. The third circuit has a first power supply terminal coupled the second power supply terminal of the second circuit, a second power supply terminal, and an input/output. The first capacitor has a first terminal coupled to the input/output of the first circuit and a second terminal coupled to the input/output of the second circuit. The second capacitor has a first terminal coupled to the second terminal of the first capacitor and a second terminal coupled to the input/output of the third circuit.

Abstract: A memory device includes a plurality of read only memory cells, a precharge circuit, and a sense amplifier. A read only memory (ROM) cell of the plurality of ROM cells is coupled to a word line and a bit line. The ROM cell comprises a transistor having a first current electrode coupled to receive a reference voltage, a second current electrode selectively coupled to the bit line based on the programmed state of the ROM cell, and a control electrode coupled to the word line. The precharge circuit is coupled to the bit line. The precharge circuit precharges the bit line to a precharge voltage, wherein the precharge voltage is less than the reference voltage. The sense amplifier is coupled to the bit line and to a power supply voltage terminal for receiving a power supply voltage, wherein the reference voltage is less than the power supply voltage.

Abstract: A method is for reading a first bit cell of a static random access memory in which the static random access memory has a first plurality of bit cells including the first bit cell. Each bit cell of the first plurality of bit cells includes a cross coupled pair of inverters for storing a logic state, optimized for being written, and powered by a read voltage during a read of the first plurality of bit cells. Each bit cell of the first plurality of bit cells is coupled to a true read bit line and a true write bit line, and a second plurality of bit cells is coupled to a complementary read bit line and a complementary write bit line. The true and complementary read bit lines are precharged to a precharge voltage of about half the read voltage. The true read bit line is predisposed to a logic low condition.

Abstract: A system includes a voltage controlled oscillator, a charge pump, and a current regulator circuit. The voltage controlled oscillator has a control input and a clock output that provides a clock signal at a clock frequency that is variable. The charge pump is coupled to the clock output and has an output that provides a boosted output voltage. The current regulator circuit is coupled to the control input of the voltage controlled oscillator to adjust the clock frequency based on a simulation of a rate of change of the boosted output voltage. This allows for a controlled slew rate for the output of the charge pump.

Abstract: A system has a first plurality of cores in a first coherency group. Each core transfers data in packets. The cores are directly coupled serially to form a serial path. The data packets are transferred along the serial path. The serial path is coupled at one end to a packet switch. The packet switch is coupled to a memory. The first plurality of cores and the packet switch are on an integrated circuit. The memory may or may not be on the integrated circuit. In another aspect a second plurality of cores in a second coherency group is coupled to the packet switch. The cores of the first and second pluralities may be reconfigured to form or become part of coherency groups different from the first and second coherency groups.

Abstract: A method for refreshing a Dynamic Random Access Memory (DRAM) includes performing a refresh on at least a portion of the DRAM at a first refresh rate, and performing a refresh on a second portion of the DRAM at a second refresh rate. The second portion includes one or more rows of the DRAM which do not meet a data retention criteria at the first refresh rate, and the second refresh rate is greater than the first refresh rate.

Abstract: An integrated circuit has a group of cores that communicate with a packet switch using carrierless ultra wideband (UWB) radio frequency (RF) signaling. The packet switch communicates outside the integrated circuit using optical signaling. The carrierless UWB provides for high frequency communication and processing without requiring additional space for interconnects. No special paths are necessary because the signals used by the cores for communicating with the packet switch are RF signals therefore they can be broadcast by the packet switch and be received by a plurality of cores. No conductor line or waveguide is required. Because the signals are carrierless, they can be transmitted with low power. With multiple cores providing information to the switch, the total information being received may exceed the capacity of the RF bandwidth so an external optical interface is provided to multiplex information provided via carrierless UWB RF signals by a plurality of cores.

Abstract: A free-space communication system and method of operation includes a first communication device physically coupled to a substrate and having an optical transmitter for communicating information. A second communication device is physically coupled to the substrate and has an optical receiver for communicating information. An adjustable optical beam deflector is physically coupled to the substrate for optically coupling the first communication device and the second communication device via an optical beam including a free-space optical portion. A feedback system includes a non-optical communication link for receiving information regarding the optical beam. The feedback system controls the adjustable optical beam deflector to direct the optical beam to improve the quality of an optical link incorporating the optical beam.

Abstract: A module has a substrate, first and second integrated circuits, and a heat sink. The integrated circuits each have a first major surface, a second major surface, a first edge, a second edge, and a third edge and have optical circuits having ports on the first edge and electronic circuits having ports on the second edge. The second edges are connected to the substrate. The first major surface of the second integrated circuit is parallel with the second major surface of the first integrated circuit. The heat sink has a backplane adjacent to the third edge, a first portion along the first major surface of the first integrated circuit, a second portion along the second major surface of the second integrated circuit extending from the backplane, and an insert between the first major surface of the second integrated circuit and the second major surface of the first integrated circuit.

Abstract: A method for refreshing a Dynamic Random Access Memory (DRAM) includes performing a refresh on at least a portion of the DRAM at a first refresh rate, and performing a refresh on a second portion of the DRAM at a second refresh rate. The second portion includes one or more rows of the DRAM which do not meet a data retention criteria at the first refresh rate, and the second refresh rate is greater than the first refresh rate.

Abstract: A system includes first, second, and third circuits and first and second capacitors. The first capacitor has a first power supply terminal coupled to positive power supply terminal, a second power supply terminal, and an input/output. The second capacitor has a first power supply terminal coupled the second power supply terminal of the first circuit, a second power supply terminal, and an input/output. The third circuit has a first power supply terminal coupled the second power supply terminal of the second circuit, a second power supply terminal, and an input/output. The first capacitor has a first terminal coupled to the input/output of the first circuit and a second terminal coupled to the input/output of the second circuit. The second capacitor has a first terminal coupled to the second terminal of the first capacitor and a second terminal coupled to the input/output of the third circuit.

Abstract: A system includes a first circuit, a first charge pump, a second circuit, and a second charge pump. The first circuit has a first power supply terminal coupled to a positive power supply terminal and a second power supply terminal. The first charge pump has an input coupled to positive power supply terminal and an output coupled to the second power supply terminal of the first circuit. The second circuit has a first power supply terminal coupled the second power supply terminal of the first circuit and a second power supply terminal. The second charge pump has an input coupled to the first power supply terminal of the second circuit and an output coupled to the second power supply terminal of the second circuit.

Abstract: A system has a first plurality of cores in a first coherency group. Each core transfers data in packets. The cores are directly coupled serially to form a serial path. The data packets are transferred along the serial path. The serial path is coupled at one end to a packet switch. The packet switch is coupled to a memory. The first plurality of cores and the packet switch are on an integrated circuit. The memory may or may not be on the integrated circuit. In another aspect a second plurality of cores in a second coherency group is coupled to the packet switch. The cores of the first and second pluralities may be reconfigured to form or become part of coherency groups different from the first and second coherency groups.

Abstract: A system has a first plurality of cores in a first coherency group. Each core transfers data in packets. The cores are directly coupled serially to form a serial path. The data packets are transferred along the serial path. The serial path is coupled at one end to a packet switch. The packet switch is coupled to a memory. The first plurality of cores and the packet switch are on an integrated circuit. The memory may or may not be on the integrated circuit. In another aspect a second plurality of cores in a second coherency group is coupled to the packet switch. The cores of the first and second pluralities may be reconfigured to form or become part of coherency groups different from the first and second coherency groups.

Abstract: A module has a substrate, first and second integrated circuits, and a heat sink. The integrated circuits each have a first major surface, a second major surface, a first edge, a second edge, and a third edge and have optical circuits having ports on the first edge and electronic circuits having ports on the second edge. The second edges are connected to the substrate. The first major surface of the second integrated circuit is parallel with the second major surface of the first integrated circuit. The heat sink has a backplane adjacent to the third edge, a first portion along the first major surface of the first integrated circuit, a second portion along the second major surface of the second integrated circuit extending from the backplane, and an insert between the first major surface of the second integrated circuit and the second major surface of the first integrated circuit.

Abstract: A voltage circuit and method charges a circuit node to a first predetermined voltage. The first predetermined voltage charged onto the circuit node is used for a first predetermined function during a first time period. A portion of charge from the circuit node is removed to circuitry coupled to the circuit node. The portion of the charge is reused during a second time period subsequent to the first time period. In one form a voltage generator has diode configurable transistors for passing current in only one direction depending upon whether the circuit node is being charged or discharged. In another form a switch couples the circuit node between a reference terminal and another circuit for charge reuse. Reuse of charge permits increased power savings.

Abstract: A system includes a voltage controlled oscillator, a charge pump, and a current regulator circuit. The voltage controlled oscillator has a control input and a clock output that provides a clock signal at a clock frequency that is variable. The charge pump is coupled to the clock output and has an output that provides a boosted output voltage. The current regulator circuit is coupled to the control input of the voltage controlled oscillator to adjust the clock frequency based on a simulation of a rate of change of the boosted output voltage. This allows for a controlled slew rate for the output of the charge pump.

Abstract: A voltage circuit and method charges a circuit node to a first predetermined voltage. The first predetermined voltage charged onto the circuit node is used for a first predetermined function during a first time period. A portion of charge from the circuit node is removed to circuitry coupled to the circuit node. The portion of the charge is reused during a second time period subsequent to the first time period. In one form a voltage generator has diode configurable transistors for passing current in only one direction depending upon whether the circuit node is being charged or discharged. In another form a switch couples the circuit node between a reference terminal and another circuit for charge reuse. Reuse of charge permits increased power savings.

Abstract: An integrated circuit is configured to be in a calibration mode of operation to establish a desired output impedance of a driver circuit. A predetermined constant voltage is established at a circuit node within the integrated circuit. A calibration current is conducted through a transistor connected in series with a variable value resistance in the integrated circuit at the circuit node. A resistance value of the variable value resistance is varied to establish a value of the calibration current which establishes the desired output impedance. The calibration mode is exited and a functional mode is entered. A calibrated resistance value is used during the functional mode of operation. The calibration current is conducted as a calibrated current through the transistor and calibrated resistance value. Variation of the calibrated current is corrected in response to voltage and process variations to maintain the calibrated current and output impedance of the driver circuit.

Abstract: A method for refreshing a Dynamic Random Access Memory (DRAM) includes performing a refresh on at least a portion of the DRAM at a first refresh rate, and performing a refresh on a second portion of the DRAM at a second refresh rate. The second portion includes one or more rows of the DRAM which do not meet a data retention criteria at the first refresh rate, and the second refresh rate is greater than the first refresh rate.