Abstract: In an integrated circuit having a plurality of modules and/or submodules that each perform a substantially same function, defective modules and/or submodules are determined by creating a test signature from an input test pattern. The output of each module and/or submodule is compared with the test signature and defective modules to identify defective modules and/or submodules. The identity of defective modules/submodules is stored on the integrated circuit for subsequent use by a customer. Integrated circuits having one or more defective modules/submodules are sold to customers with full disclosure of which modules/submodules are defective, thereby improving the yield associated with the product. Pricing of the product is discounted for products with less than full functionality.

Abstract: A memory system has a plurality of memory modules and a global memory buffer. Each of the plurality of memory modules has at least two integrated circuit memory chips. The global memory buffer has a plurality of ports, each port coupled to a respective one of the plurality of memory modules. The global memory buffer stores information that is communicated with the plurality of memory modules. The global memory buffer has a communication port for coupling to a high-speed communication link.

Abstract: A semiconductor topography (10) is provided which includes a semiconductor-on-insulator (SOI) substrate having a conductive line (16) arranged within an insulating layer (22) of the SOI substrate. A method for forming an SOI substrate with such a configuration includes forming a first conductive line (16) within an insulating layer (22) arranged above a wafer substrate (12) and forming a silicon layer (24) upon surfaces of the first conductive line and the insulating layer. A further method is provided which includes the formation of a transistor gate (28) upon an SOI substrate having a conductive line (16) embedded therein and implanting dopants within the semiconductor topography to form source and drain regions (30) within an upper semiconductor layer (24) of the SOI substrate such that an underside of one of the source and drain regions is in contact with the conductive line.

Abstract: A memory comprising a first bit line, a second bit line, a word line, a first pair of cross-coupled inverters having a first input/output node and a second input/output node, a first power supply node and a second power supply node, wherein the first power supply node is coupled to a first power supply terminal, is provided. The memory further comprises a first gating transistor coupled between a second power supply terminal and the second power supply node, the first gating transistor receiving a first write enable signal that gates the gating transistor to a non-conductive condition during a write of the first pair of cross-coupled inverters. The memory further comprises a first pass transistor coupled to the first word line, the first input/output node, and the first bit line and a second pass transistor coupled to the first word line, the second input/output node, and the second bit line.

Abstract: A semiconductor topography (10) is provided which includes a semiconductor-on-insulator (SOI) substrate having a conductive line (16) arranged within an insulating layer (22) of the SOI substrate. A method for forming an SOI substrate with such a configuration includes forming a first conductive line (16) within an insulating layer (22) arranged above a wafer substrate (12) and forming a silicon layer (24) upon surfaces of the first conductive line and the insulating layer. A further method is provided which includes the formation of a transistor gate (28) upon an SOI substrate having a conductive line (16) embedded therein and implanting dopants within the semiconductor topography to form source and drain regions (30) within an upper semiconductor layer (24) of the SOI substrate such that an underside of one of the source and drain regions is in contact with the conductive line.

Abstract: In one form a memory and method thereof has a memory array having a plurality of memory cells. A bit line precharge operation is based on a clock edge of an external clock signal. A word line is selected after the beginning of the precharge operation. A sense operation is begun after enabling the word line, where the sense operation is for sensing a logic state of a memory cell. A data bit is output from the memory array corresponding to the sensed logic state of the memory cell. In one form the bit line precharge operation further comprises the bit line precharge operation having a predetermined duration that is independent of the clock signal, and the sense operation begins a predetermined delay time after enabling the word line, the sense operation having a variable duration.

Abstract: A double-rate memory has an array of single word line memory cells arranged in rows and columns. The single word line memory cells provide and store data via a first port. Addressing and control circuitry is coupled to the array of single word line memory cells. The addressing and control circuitry receives an address enable signal to initiate an access of the array whereby an address is received, decoded, and corresponding data retrieved or stored. Edge detection circuitry receives a memory clock and provides the address enable signal upon each rising edge and each falling edge of the memory clock to perform two memory operations in a single cycle of the memory clock. A memory operation includes addressing the memory and storing data in the memory or retrieving and latching data from the memory. In another form a double-rate dual port memory permits two independent read/write memory accesses in a single memory cycle.

Abstract: An impedance matching between two integrated circuits is achieved using an impedance measuring circuit in the integrated circuit that contains an impedance-programmable output buffer (IPOB) that is to have its output impedance changed. The impedance measuring device is directly connected to the output of the IPOB so that it is detecting the same impedance that the IPOB will drive and thereby avoids the errors of measuring the resistance of a device that imperfectly models the actual impedance. The impedance measuring device is preferably an analog to digital (A/D) converter that provides a digital output relative to the voltage present on the same terminal as the output of the IPOB. By having the A/D converter on the same integrated circuit as the IPOB, communications difficulties between the A/D converter and the IPOB are minimal.

Abstract: An integrated circuit memory includes a plurality of memory cells, where each of the plurality of memory cells comprises a first storage node and a second storage node. Each of the plurality of memory cells comprises a transistor coupled between the first and second storage nodes and responsive to an equalization signal. An equalization control circuit provides the equalization signal to selected memory cells of the plurality of memory cells. The equalization control circuit is for equalizing a voltage between the first and second storage nodes to enable to a write operation of the selected memory cells. During the write operation a data signal is provided to a first bit line that swings between a logic high voltage equal to a power supply voltage and a logic low voltage equal to ground potential. The transistor and the equalization control circuit enables reliable memory operation at low power supply voltages.

Abstract: A memory (10) has a plurality of memory cells, a transceiver (56) for receiving a low voltage high frequency differential address signal, and a serial input/output data port (52, 54) for receiving a high frequency low voltage differential data signal. The memory (10) can operate in one of two different modes, a normal mode and a cache line mode. In cache line mode, the memory can access an entire cache line from a single address. A fully hidden refresh mode allows for timely refresh operations while operating in cache line mode. Data is scored in the memory array (14) by interleaving in multiple sub-arrays (15, 17). During a hidden refresh mode of operation, one sub-array (15) is accessed while another sub-array (17) is refreshed. Two or more of the memories (10) may be chained together to provide a high speed low power memory system.

Abstract: A memory (10) has a plurality of memory cells, a serial address port (47) for receiving a low voltage high frequency differential address signal, and a serial input/output data port (52, 54) for receiving a high frequency low voltage differential data signal. The memory (10) can operate in one of two different modes, a normal mode and a cache line mode. In cache line mode, the memory can access an entire cache line from a single address. A fully hidden refresh mode allows for timely refresh operations while operating in cache line mode. Data is stored in the memory array (14) by interleaving in multiple sub-arrays (15, 17). During a hidden refresh mode of operation, one sub-array (15) is accessed while another sub-array (17) is refreshed. Two or more of the memories (10) may be chained together to provide a high speed low power memory system.

Abstract: An inductive device (105) is formed above a substrate (225) having a conductive coil formed around a core (109). The coil comprises segments formed from a first plurality of bond wires (113) and a second plurality of bond wires (111). The first plurality of bond wires (113) extends between the core (109) and the substrate (225). Each of the first plurality of bond wires is coupled to two of a plurality of wire bond pads (117, 116). The second plurality of bond wires (111) extends over the core (109) and is coupled between two of the plurality of wire bond pads (117, 119). A shield (141) includes a portion that is positioned between the core (109) and the substrate (225).

Abstract: A memory device (201) includes a plurality of memory cells (203), bit lines, word lines, a sense amplifier (314), and a self-timed latch (215). The sense amplifier (314), responsive to a sense enable signal, is for sensing and amplifying a voltage on the bit lines corresponding to a stored logic state of a selected one of the plurality of memory cells. An isolation circuit (306, 308) is coupled between the bit lines (205 and 207) and the sense amplifier (314). The isolation circuit (306, 308) is for decoupling the selected one of the plurality of memory cells from the sense amplifier (314) at about the same time that the sense enable signal is asserted. A self-timed latch (215) is coupled to the sense amplifier (314). The self-timed latch (215) does not receive a clock signal and is responsive to only the amplified voltage.

Abstract: An integrated circuit (101) includes electrical circuitry (105) formed on a substrate (103). An interconnect layer (109, 117) is formed over the electrical circuitry (105). In one example, a plurality of magneto-resistive random access memory cells (MRAM) (161, 171) is implemented above the interconnect layer. Each of the MRAM cells comprises a magneto-resistive tunnel junction (MTJ) storage element. A transistor (130) is formed-over the interconnect layer (109, 117). In one embodiment, the transistor is implemented as a thin film transistor (TFT). In one embodiment the transistor is a select transistor and may be coupled to one or more of the MTJ storage elements. Access circuitry (203, 205, 207, 209) is formed on the substrate (103) under the plurality of MRAM cells (161, 171).

Abstract: An integrated circuit (101) includes electrical circuitry (105) formed on a substrate (103). An interconnect layer (109, 117) is formed over the electrical circuitry (105). In one example, a plurality of magneto-resistive random access memory cells (MRAM) (161, 171) is implemented above the interconnect layer. Each of the MRAM cells comprises a magneto-resistive tunnel junction (MTJ) storage element. A transistor (130) is formed over the interconnect layer (109, 117). In one embodiment, the transistor is implemented as a thin film transistor (TFT). In one embodiment the transistor is a select transistor and may be coupled to one or more of the MTJ storage elements. Access circuitry (203, 205, 207, 209) is formed on the substrate (103) under the plurality of MRAM cells (161, 171).

Abstract: A memory device (201) includes a plurality of memory cells (203), bit lines, word lines, a sense amplifier (314), and a self-timed latch (215). The sense amplifier (314), responsive to a sense enable signal, is for sensing and amplifying a voltage on the bit lines corresponding to a stored logic state of a selected one of the plurality of memory cells. An isolation circuit (306, 308) is coupled between the bit lines (205 and 207) and the sense amplifier (314). The isolation circuit (306, 308) is for decoupling the selected one of the plurality of memory cells from the sense amplifier (314) at about the same time that the sense enable signal is asserted. A self-timed latch (215) is coupled to the sense amplifier (314). The self-timed latch (215) does not receive a clock signal and is responsive to only the amplified voltage.

Abstract: A memory (10) has a memory array (12), a charge pump (18), a voltage regulator (20), a refresh control circuit (16), and a refresh counter (22). The charge pump (18) provides a substrate bias to the memory array (12). The voltage regulator (20) provides a pump enable signal for maintaining a voltage level of the substrate bias within upper and lower limits. The refresh control circuit (16) controls refresh operations. The refresh counter (22) is coupled to receive the pump enable signal, and in response, provides a refresh timing signal to the refresh control circuit (16) to control a refresh rate of the memory array (12). A programmable fuse circuit (26) is provided to program the refresh rate using the counter (22). The programmable fuse circuit (26) may be programmed during wafer probe testing or board level burn-in. A built-in self test (BIST) circuit (24) may be included to facilitate testing.

Abstract: A memory (10) has a memory array (12), a charge pump (18), a voltage regulator (20), a refresh control circuit (16), and a refresh counter (22). The charge pump (18) provides a substrate bias to the memory array (12). The voltage regulator (20) provides a pump enable signal for maintaining a voltage level of the substrate bias within upper and lower limits. The refresh control circuit (16) controls refresh operations. The refresh counter (22) is coupled to receive the pump enable signal, and in response, provides a refresh timing signal to the refresh control circuit (16) to control a refresh rate of the memory array (12). A programmable fuse circuit (26) is provided to program the refresh rate using the counter (22). The programmable fuse circuit (26) may be programmed during wafer probe testing or board level burn-in. A built-in self test (BIST) circuit (24) may be included to facilitate testing.

Abstract: Single-ended write circuitry (18) in storage circuit (19) includes transistor (35) which provides aid in transitioning latch node (51) from a logic state “1” to a logic state “0” when latch node (50) is being transitioned from a logic state “0” to a logic state “1”. Similarly, single-ended write circuitry (18) includes transistor (37) which provides aid in transitioning latch node (50) from a logic state “1” to a logic state “0” when latch node (51) is being transitioned from a logic state “0” to a logic state “1”. In some embodiments of the present invention, the effect of transistor (35) may be selectively applied to latch (16). A device, such as transistor (34), may be used to selectively negate the effect of transistor (35). In some embodiments of the present invention, the effect of transistor (37) may be selectively applied to latch (16).

Abstract: A memory (110) uses memory cells not intended for user programming referred to as ‘dummy’ cells (202, 206). When selected, the dummy cells provide a current that establishes a reference voltage substantially equal to one-half of voltage created in a bit line by a cell programmed to a one and a cell programed to a zero. The reference voltage is sensed and compared with a bit line voltage created when a memory cell is read. By time multiplexing either one dummy cell programmed to a logic one or two dummy cells per bit line programmed respectively to logic one and logic zero, the desired reference voltage is accurately created. Memories such as MRAM and Flash that may be is difficult to accurately sense due to cell processing variations are enhanced by the timed selective use of one or more dummy cells.