Patents by Inventor Peter C. Van Buskirk

Peter C. Van Buskirk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6316797
    Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 &mgr;m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
    Type: Grant
    Filed: February 19, 1999
    Date of Patent: November 13, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston, Daniel J. Vestyck, Thomas H. Baum
  • Publication number: 20010035543
    Abstract: A ferroelectric capacitor device structure, including a ferroelectric stack capacitor comprising a ferroelectric material capacitor element on a substrate containing buried transistor circuitry beneath an insulator layer having a via therein containing a conductive plug to the transistor circuitry, wherein E-fields are structurally confined to the ferroelectric capacitor material element.
    Type: Application
    Filed: June 27, 2001
    Publication date: November 1, 2001
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Steven M. Bilodeau
  • Patent number: 6303391
    Abstract: A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
    Type: Grant
    Filed: November 20, 1997
    Date of Patent: October 16, 2001
    Assignees: Advanced Technology Materials, Inc., Siemens Aktiengesellschaft
    Inventors: Frank S. Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Publication number: 20010024679
    Abstract: A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.
    Type: Application
    Filed: June 5, 2001
    Publication date: September 27, 2001
    Applicant: Advanced Technology Materials Inc.
    Inventors: Thomas H. Baum, Phillip Chen, Frank DiMeo, Peter C. Van Buskirk, Peter S. Kirlin
  • Patent number: 6284654
    Abstract: A method of fabricating an electrode structure for a ferroelectric device structure including a ferroelectric material, involving chemical vapor deposition of a hybrid electrode constituting a multilayer electrode structure or an alloyed electrode structure, using either bubbler delivery or liquid delivery chemical vapor deposition.
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: September 4, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Jeffrey F. Roeder, Thomas H. Baum, Peter C. Van Buskirk
  • Patent number: 6254792
    Abstract: A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
    Type: Grant
    Filed: June 8, 1998
    Date of Patent: July 3, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Frank DiMeo, Jr., Peter C. Kirlin, Thomas H. Baum
  • Patent number: 6184550
    Abstract: A microelectronic structure including adjacent material layers susceptible of adverse interaction in contact with one another, and a barrier layer interposed between said adjacent material layers, wherein said barrier layer comprises a binary, ternary or higher order metal nitride-carbide material, whose metal constituents are different from one another and include at least one metal selected from the group consisting of transition metals Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Sc and Y, and optionally further including Al and/or Si. The barrier layer is stoichiometrically constituted to be amorphous or nanocrystalline in character, and may be readily formed by techniques such as chemical vapor deposition, sputtering, and plasma-assisted deposition, to provide a diffusional barrier of appropriate resistivity character for structures such as DRAMs or non-volatile ferroelectric memory cells.
    Type: Grant
    Filed: August 28, 1998
    Date of Patent: February 6, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Michael W. Russell
  • Patent number: 6180420
    Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
    Type: Grant
    Filed: December 9, 1998
    Date of Patent: January 30, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank S. Hintermaier, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Patent number: 6177135
    Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one amide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
    Type: Grant
    Filed: December 9, 1998
    Date of Patent: January 23, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank S. Hintermaier, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Patent number: 6100200
    Abstract: The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated deposition and etch unit processes to provide a good conformal film of metal on the inner surfaces of a via or trench. The deposition and etch steps can also be performed simultaneously.
    Type: Grant
    Filed: December 21, 1998
    Date of Patent: August 8, 2000
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Michael W. Russell, Daniel J. Vestyck, Scott R. Summerfelt, Theodore S. Moise
  • Patent number: 6010748
    Abstract: A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing.
    Type: Grant
    Filed: February 3, 1998
    Date of Patent: January 4, 2000
    Assignees: Advanced Technology Materials, Inc., International Business Machines Corporation, Varian Corporation
    Inventors: Peter C. Van Buskirk, James A. Fair, David E. Kotecki
  • Patent number: 5998236
    Abstract: There is disclosed a structure of and a method for fabricating a ferroelectric film on a non-conductive substrate. An adhesion layer, e.g., a layer of silicon dioxide and a layer of zirconium oxide, is deposited over a substrate. A conductive layer, e.g., a noble metal, a non-noble metal, or a conductive oxide, is deposited over the adhesion layer. A seed layer, e.g., a compound containing lead, lanthanum, titanium, and oxygen, with a controlled crystal lattice orientation, is deposited on the conductive layer. This seed layer has ferroelectric properties. Over the seed layer, another ferroelectric material, e.g., lead zirconium titanate, can be deposited with a tetragonal or rhombohedral crystalline lattice structure with predetermined and controlled crystal orientation.
    Type: Grant
    Filed: February 17, 1998
    Date of Patent: December 7, 1999
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Jeffrey Roeder, Peter C. Van Buskirk
  • Patent number: 5976928
    Abstract: A method of fabricating a ferroelectric capacitor structure by sequentially depositing a bottom electrode layer, a ferroelectric layer and a top electrode layer on a base structure, optionally with deposition of a layer of a conductive barrier material beneath the bottom electrode layer, to form a capacitor precursor structure, and planarizing the capacitor precursor structure by chemical mechanical polishing to yield the ferroelectric capacitor structure, e.g., a stack capacitor or trench capacitor. The process is carried out without dry etching of the electrode layers or dry etching of the ferroelectric layer, to yield ferroelectric capacitors having a very small feature size, as for example between 0.10 and 0.20 .mu.m.
    Type: Grant
    Filed: November 20, 1997
    Date of Patent: November 2, 1999
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter S. Kirlin, Peter C. Van Buskirk
  • Patent number: 5972430
    Abstract: A chemical vapor deposition (CVD) method for forming a multi-component oxide layer. There is first provided a chemical vapor deposition (CVD) reactor chamber. There is then positioned within the chemical vapor deposition (CVD) reactor chamber a substrate. There is then formed over the substrate a multi-component oxide precursor layer. The multi-component oxide precursor layer is formed from at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material. There is then oxidized with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form a multi-component oxide layer formed over the substrate.
    Type: Grant
    Filed: November 26, 1997
    Date of Patent: October 26, 1999
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank DiMeo, Jr., Steven M. Bilodeau, Peter C. Van Buskirk
  • Patent number: 5882416
    Abstract: A liquid delivery system for delivery of an initially liquid reagent in vaporized form to a chemical vapor deposition reactor arranged in vapor-receiving relationship to the liquid delivery system.
    Type: Grant
    Filed: June 19, 1997
    Date of Patent: March 16, 1999
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter C. Van Buskirk, Steven M. Bilodeau, Ralph J. Carl, Jr.
  • Patent number: 5876503
    Abstract: A system for the deposition of a multicomponent material layer on a substrate from respective liquid precursors for components of the multicomponent material layer, comprising: a vapor deposition zone; and multiple vaporizer units, each of which is joined (i) to at least one source of liquid precursor for supplying at least one liquid precursor thereto, and (ii) in vapor flow communication with the vapor deposition zone arranged to retain the substrate therein, for deposition on the substrate of vapor phase species from precursor vapor formed by vaporization of liquid precursors in the vaporizer units of the system.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: March 2, 1999
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Jeffrey Roeder, Peter C. Van Buskirk
  • Patent number: 5741363
    Abstract: A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing.
    Type: Grant
    Filed: March 22, 1996
    Date of Patent: April 21, 1998
    Assignees: Advanced Technology Materials, Inc., International Business Machines Corporation, Varian Corporation
    Inventors: Peter C. Van Buskirk, James A. Fair, David E. Kotecki
  • Patent number: 5719417
    Abstract: There is disclosed a structure of and a method for fabricating a ferroelectric film on a non-conductive substrate. An adhesion layer, e.g., a layer of silicon dioxide and a layer of zirconium oxide, is deposited over a substrate. A conductive layer, e.g., a noble metal, a non-noble metal, or a conductive oxide, is deposited over the adhesion layer. A seed layer, e.g., a compound containing lead, lanthanum, titanium, and oxygen, with a controlled crystal lattice orientation, is deposited on the conductive layer. This seed layer has ferroelectric properties. Over the seed layer, another ferroelectric material, e.g., lead zirconium titanate, can be deposited with a tetragonal or rhombohedral crystalline lattice structure with predetermined and controlled crystal orientation.
    Type: Grant
    Filed: November 27, 1996
    Date of Patent: February 17, 1998
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Jeffrey Roeder, Peter C. Van Buskirk
  • Patent number: 5705443
    Abstract: A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.
    Type: Grant
    Filed: May 30, 1995
    Date of Patent: January 6, 1998
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Gregory Stauf, Robin A. Gardiner, Peter S. Kirlin, Peter C. Van Buskirk
  • Patent number: 5653806
    Abstract: An apparatus for dispersingly delivering a vapor-phase source reagent material containing a deposition species, to a substrate for deposition of such species thereon. The apparatus includes a disperser housing having a front wall with an array of discharge openings therein for discharging vapor-phase source reagent material from the housing interior volume onto a wafer or other substrate article mounted in vapor-receiving relationship to the disperser housing front wall. The front wall includes interior heat transfer passages arranged in a manifolded conformation for highly efficient temperature stabilization of the vapor discharged from the housing discharge openings, to produce highly uniform thickness deposited films on the substrate.
    Type: Grant
    Filed: March 10, 1995
    Date of Patent: August 5, 1997
    Assignee: Advanced Technology Materials, Inc.
    Inventor: Peter C. Van Buskirk