Abstract: There is disclosed a structure of and a method for fabricating a ferroelectric film on a non-conductive substrate. An adhesion layer, e.g., a layer of silicon dioxide and a layer of zirconium oxide, is deposited over a substrate. A conductive layer, e.g., a noble metal, a non-noble metal, or a conductive oxide, is deposited over the adhesion layer. A seed layer, e.g., a compound containing lead, lanthanum, titanium, and oxygen, with a controlled crystal lattice orientation, is deposited on the conductive layer. This seed layer has ferroelectric properties. Over the seed layer, another ferroelectric material, e.g., lead zirconium titanate, can be deposited with a tetragonal or rhombohedral crystalline lattice structure with predetermined and controlled crystal orientation.

Abstract: A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.

Abstract: An apparatus for dispersingly delivering a vapor-phase source reagent material containing a deposition species, to a substrate for deposition of such species thereon. The apparatus includes a disperser housing having a front wall with an array of discharge openings therein for discharging vapor-phase source reagent material from the housing interior volume onto a wafer or other substrate article mounted in vapor-receiving relationship to the disperser housing front wall. The front wall includes interior heat transfer passages arranged in a manifolded conformation for highly efficient temperature stabilization of the vapor discharged from the housing discharge openings, to produce highly uniform thickness deposited films on the substrate.