Abstract: A sensor arrangement may be used to measure properties, such as optical properties, of a device arranged to process substrates. The sensor arrangement includes a substrate having the following: a plurality of sensor elements provided as an integrated circuit in the substrate, for each one of the plurality of sensor elements associated electronic circuitry comprising a processing circuit connected to the sensor element and an input/output interface connected to the processing circuit, and a power supply unit configured to supply operating power only to the electronic circuitry associated with one or more of the plurality of sensor elements which are in use. The at least one sensor element and possibly the processing electronics, the input/output unit, and/or the power supply unit may be provided as one or more integrated circuits or other structures in the substrate.

Abstract: A maskless lithography system is described having a programmable mask to allow performing several lithographic steps using the same mask. In every lithographic step, the corresponding pattern is obtained by providing a digital pattern to the programmable mask. The programmable mask includes an array of pixels which are based on the electro-wetting principle. According to this principle, every pixel has a transparent reservoir containing a first, non-polar, non-transparent fluid and a second, polar, transparent fluid which are immiscible. Applying a field to the reservoir allows to displace the fluids with respect to each other. This allows to make the pixel either transparent or non-transparent. This lithographic programmable mask allows high resolution and fast setting and refreshing. A corresponding method for performing maskless optical lithography also is described.

Abstract: A lithographic apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a fluid cleaning system that cleans a fluid to be introduced into a region in between the optical element and the substrate. The fluid cleaning system includes a fluid inlet, a fluid outlet, and a cleaning zone disposed between the inlet and outlet. The cleaning zone includes a nucleated surface provided with a plurality of nucleation sites.

Abstract: The invention proposes a lithographic projection device such as a wafer stepper for forming a pattern on a substrate or wafer, comprising a(n) (actinic) radiation or light source (2), illumination optics (4) for directing light issuing from said light source onto a mask (6) and projection optics (8) for directing diffracted radiation or light from said mask to the substrate/wafer to be imaged, wherein an optical filter (9) is provided downstream of said projection optics and an imageable substrate (7) having an optical filter (9) on the side to be imaged.

Abstract: A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

Abstract: A lithographic apparatus is disclosed. The apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam entry area and an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a nucleated surface that is associated with the projection system on which a plurality of nucleation sites are provided. The surface is disposed away from at least one of the beam entry area and the beam exit area.

Abstract: A lithographic apparatus is disclosed. The apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam entry area and an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a nucleated surface that is associated with the projection system on which a plurality of nucleation sites are provided. The surface is disposed away from at least one of the beam entry area and the beam exit area.

Abstract: A lithographic apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a fluid cleaning system that cleans a fluid to be introduced into a region in between the optical element and the substrate. The fluid cleaning system includes a fluid inlet, a fluid outlet, and a cleaning zone disposed between the inlet and outlet. The cleaning zone includes a nucleated surface provided with a plurality of nucleation sites.

Abstract: The performance of an illumination system in, for example, a lithographic projection apparatus can be measured accurately and reliably by means of a test object (55) comprising at least one Fresnel zone lens (30) and an associated reference mark, preferably a ring (40). By superposed imaging of these and detecting and evaluating the composed image (56), telecentricity errors and aberrations of the illumination can be measured.

Abstract: For determining best process variables (E, F, W) setting that provide optimum process window for a lithographic process for printing features having critical dimensions (CD) use is made of an overall performance characterizing parameter (Cpk) and of an analytical model, which describes CD data as a function of process parameters, like exposure dose (E) and focus (F). This allows calculating of the average value (?CD) and the variance (?CD) of the statistical CD distribution (CDd) and to determine the highest Cpk value and the associated values of process parameters, which values provide the optimum process window.

Abstract: A lithographic apparatus is disclosed. The apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam entry area and an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a nucleated surface that is associated with the projection system on which a plurality of nucleation sites are provided. The surface is disposed away from at least one of the beam entry area and the beam exit area.

Abstract: For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.

Abstract: An immersion lithographic apparatus includes a voltage generator or power source that applies a potential difference to an object in contact with the immersion liquid such that bubbles and/or particles in the immersion liquid are either attracted or repelled from that object due to the electrokinetic potential of the surface of the bubble in the immersion liquid.

Abstract: For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.

Abstract: The performance of a scanning electron microscope (SEM) (10) is determined by scanning, with this SEM, porous silicon surface areas (PSF, PSC) each having a different average pore size, calculating the Fourier transform spectra (Fc) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa) and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).

Abstract: An immersion lithographic apparatus includes a voltage generator or power source that applies a potential difference to an object in contact with the immersion liquid such that bubbles and/or particles in the immersion liquid are either attracted or repelled from that object due to the electrokinetic potential of the surface of the bubble in the immersion liquid.

Abstract: A lithographic apparatus is disclosed. The apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam entry area and an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a nucleated surface that is associated with the projection system on which a plurality of nucleation sites are provided. The surface is disposed away from at least one of the beam entry area and the beam exit area.

Abstract: For determining aberrations of an optical imaging system (PL), a test object (12,14) comprising at least one delta test feature (10) is imaged either on an aerial scanning detector (110) or in a resist layer (71), which layer is scanned by a scanning device, for example a SEM. A new analytical method is used to retrieve from the data stream generated by the aerial detector or the scanning device different Zernike coefficients (Zn).

Abstract: The performance of a scanning electron microscope (SEM) (10) is determined by scanning, with this SEM, porous silicon surface areas (PSF, PSC) each having a different average pore size, calculating the Fourier transform spectra (Fc) of the images of the surface areas and extrapolating the resolution (R) at a zero signal-to-noise ratio (SNR) from the width (W(1/e)), the signal amplitude (Sa) and the noise offset (NL) of the spectra. A test sample provided with the different surface areas is obtained by anodizing a silicon substrate (Su) at a constant electric current, while continuously decreasing the substrate area exposed to the etching electrolyte (El).

Abstract: For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.