Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract: A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffusion stop layer (16) is arranged between the active layer (14) and the p-doped cladding layer (20). The diffusion stop layer (16) is formed by a strained superlattice.

Abstract: A holding device for a vacuum unit has a lifting table transferable between a lower end position and an upper end position for moving a support plate toward the underside of a disc-shaped workpiece. The workpiece is supported by a support ring carrying centring pins spaced to form an equilateral triangle, in the center of which the axis of the support plate is located. A clamping ring clamps the workpiece with the support ring. The centring pins engage the clamping ring to center the support ring and clamping ring relative to the support plate axis so they are not affected by thermal expansion.