Abstract: A method includes simultaneously forming a first dummy gate stack and a second dummy gate stack on a first portion and a second portion of a protruding fin, simultaneously removing a first gate electrode of the first dummy gate stack and a second gate electrode of the second dummy gate stack to form a first trench and a second trench, respectively, forming an etching mask, wherein the etching mask fills the first trench and the second trench, patterning the etching mask to remove the etching mask from the first trench, removing a first dummy gate dielectric of the first dummy gate stack, with the etching mask protecting a second dummy gate dielectric of the second dummy gate stack from being removed, and forming a first replacement gate stack and a second replacement gate stack in the first trench and the second trench, respectively.

Abstract: A method includes forming a dummy gate electrode on a semiconductor region, forming a first gate spacer on a sidewall of the dummy gate electrode, and removing an upper portion of the first gate spacer to form a recess, wherein a lower portion of the first gate spacer remains, filling the recess with a second gate spacer, removing the dummy gate electrode to form a trench, and forming a replacement gate electrode in the trench.

Abstract: The disclosure provides a capillary liquid conducting and atomizing unit and an atomizing device. The capillary liquid conducting and atomizing unit includes a housing and an atomization assembly arranged in the housing; at least one liquid inlet is provided in a side of the atomization assembly, a capillary liquid absorbing channel communicating with the liquid inlet is provided between an inner side of the housing and the side where the liquid inlet is located; a length direction of the capillary liquid absorbing channel extends along a height direction of the side where the liquid inlet is located, and two opposite ends of the capillary liquid absorbing channel respectively extend towards an upper side and a lower side of the liquid inlet, to absorb liquid into the liquid inlet by capillary action. Thus, the liquid inlet is not required to be arranged at a bottom of the liquid storage reservoir.

Abstract: A heating device and a manufacturing method therefor, and a heat-not-burn smoking device. The heating device includes a first heating assembly, including a first housing configured for contacting with a tobacco, a first heating element on the first housing and configured to generate heat when electrified, and a first insulator between the first heating element and the first housing. The first heating element generates heat when electrified, the heat is conducted to the first housing through the first insulator, to heat but not burn the tobacco. The heating device is formed by cooperation of the heating element, the insulator and the housing, and heats the tobacco by the heating element when electrified. Compared with a heating conductive layer formed by a thick film printing process, the manufacturing of the heating device is simpler and more convenient, and the consistency and service life of the product are greatly improved.

Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.

Abstract: A liquid conducting cotton atomization unit, including a heating member, a liquid conducting cotton and at least one supporting tube. The liquid conducting cotton is axially inserted in the heating member. The supporting tube is inserted in the liquid conducting cotton parallel to an axial direction thereof. The heating member includes a heating portion and two electrode portions respectively connected to two ends of the heating portion, the supporting tube is provided with at least one liquid outlet hole communicated with the heating portion. Liquid is conducted via the supporting tube, and is guided to the heating portion-via the liquid outlet hole, to solve the problem of high temperature and insufficient service life caused by insufficient liquid supply in center of the heating member. Meanwhile, the supporting tube can expand the outer diameter of the liquid conducting cotton, making the liquid conducting cotton fully contact with the heating member.

Abstract: An optical fingerprint sensor (OFPS) for use with a liquid-crystal display (LCD) panel having a backlight module is positioned under the backlight module and captures an image of a fingerprint sensing area on the LCD panel through an aperture in both a reflector and a metal shield of the backlight module. The OFPS includes a sensor layer, a wafer-level optic layer bonded to the sensor layer and an infrared pass filter (IRPF) coating formed on a substantially flat top surface of the wafer-level optic layer. An OFPS may be formed with a flat top and may include a wafer-level optic layer having one or more lenses to direct light generated by a light source beneath the wafer-level optic layer. The wafer-level lenses may be bonded with the fingerprint scanner. The flat top of the OFPS may be made with an IRPF coating.

Abstract: A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of the trench, and a first sidewall portion on the sidewall of the semiconductor substrate. The first sidewall portion is removed to reveal the sidewall of the semiconductor substrate. The method further includes depositing a second semiconductor layer extending into the trench, with the second semiconductor layer having a second bottom portion over the first bottom portion, and a second sidewall portion contacting the sidewall of the semiconductor substrate. The second sidewall portion is removed to reveal the sidewall of the semiconductor substrate.

Abstract: A wearable device and a method for adjusting a display state based on an environment are provided. The method is adapted for the wearable device. The method includes: capturing an environmental image; when determining that there is a specific object in the environmental image, determining a display mode of a display circuit based on the specific object; and controlling the display circuit to be adjusted to a display state corresponding to the display mode.

Abstract: A semiconductor device includes a substrate, a dielectric layer, a source region, a drain region, and a metal structure. The substrate has a trench therein, and the dielectric layer is conformally formed over the substrate and the trench. The source region and the least one drain region are in the substrate. The metal structure is filled in the trench and surrounded by the dielectric layer, and the metal structure is disposed between the source region and the drain region. Moreover, the metal structure has a first metal portion and a second metal portion which has a height greater than a height of the first metal portion, and the first metal portion is disposed between the drain region and the second metal portion.

Abstract: Disclosed herein are compounds of formula (I) which are inhibitors of an IDO enzyme: (I). Also disclosed herein are uses of the compounds in the potential treatment or prevention of an IDO-associated disease or disorder. Also disclosed herein are compositions comprising these compounds. Further disclosed herein are uses of the compositions in the potential treatment or prevention of an IDO-associated disease or disorder.

Abstract: A semiconductor device in a first area includes first non-planar semiconductor structures separated with a first distance, and a first isolation region including a first layer and a second layer that collectively embed a lower portion of each of the first non-planar semiconductor structures. At least one of the first layer or second layer of the first isolation region is in a cured state. The semiconductor device in a second area includes second non-planar semiconductor structures separated with a second distance, and a second isolation region including a first layer and a second layer that collectively embed a lower portion of each of the second non-planar semiconductor structures. At least one of the first or second layer of the second isolation region is in a cured state.

Abstract: A method includes forming a dummy gate electrode on a semiconductor region, forming a first gate spacer on a sidewall of the dummy gate electrode, and removing an upper portion of the first gate spacer to form a recess, wherein a lower portion of the first gate spacer remains, filling the recess with a second gate spacer, removing the dummy gate electrode to form a trench, and forming a replacement gate electrode in the trench.

Abstract: A fluid-solid coupling numerical simulation method for evaluating the effect of wellbore strengthening in a fractured formation includes steps of: establishing an elastic deformation equation of rocks around the wellbore; establishing and solving the fluid flow equations within fractures and plugging zone, respectively; substituting the discretized elastic deformation equation of the rocks around the borehole wall into the fluid flow equations of fractures to obtain a fluid-solid coupling equation set for wellbore strengthening in a fractured formation; and finally solving the fluid-solid coupling equation set; and substituting basic parameters into the fluid-solid coupling equation set, and simulating mechanical response characteristics, width evolution characteristics and flow distribution characteristics of plugged fractures under different parameter combinations.

Abstract: This document provides butyrylcholinesterases having an enhanced ability to hydrolyze acyl ghrelin as well as nucleic acids encoding such butyrylcholinesterases. This document also provides methods and materials for treating obesity and/or aggression. For example, methods for administering a nucleic acid encoding a wild-type or mutant butyrylcholinesterase having the ability to hydrolyze acyl ghrelin to a mammal under conditions wherein the level of acyl ghrelin within the mammal is reduced, under conditions wherein the rate of body weight gain of the mammal is reduced, under conditions wherein the mammal's level of aggression is reduced, and/or under conditions wherein the mammal's rate of developing stress-induced tissue damage are provided.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate including a semiconductor material. The semiconductor device includes a conduction channel of a transistor disposed above the substrate. The conduction channel and the substrate include a similar semiconductor material. The semiconductor device includes a source/drain region extending from an end of the conduction channel. The semiconductor device includes a dielectric structure. The source/drain region is electrically coupled to the conduction channel and electrically isolated from the substrate by the dielectric structure.

Abstract: The present disclosure provides a method of forming a semiconductor structure. The method includes providing a semiconductor substrate and forming a patterned metal structure on the semiconductor substrate, wherein the patterned metal structure includes a first metal layer and a second metal layer deposited in a single deposition step. The method further includes etching a portion of the second metal layer thereby forming a metal plug in the second metal layer, the first metal layer of the patterned metal structure having a first metal feature underlying and contacting the metal plug.

Abstract: This invention relates to compounds of general Formula (I) and pharmaceutically acceptable salts thereof, in which R1, R2, R2A, R2B, R3, R4, R5A, R5B, R6, R7, R8, R9, p, q and r are as defined herein, to pharmaceutical compositions comprising such compounds and salts, and to methods of using such compounds, salts and compositions for the treatment of abnormal cell growth, including cancer.

Abstract: In an embodiment, a method includes forming a first conductive feature in a first inter-metal dielectric (IMD) layer; depositing a blocking film over and physically contacting the first conductive feature; depositing a first dielectric layer over and physically contacting the first IMD layer; depositing a second dielectric layer over and physically contacting the first dielectric layer; removing the blocking film; depositing an etch stop layer over any physically contacting the first conductive feature and the second dielectric layer; forming a second IMD layer over the etch stop layer; etching an opening in the second IMD layer and the etch stop layer to expose the first conductive feature; and forming a second conductive feature in the opening.