Abstract: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.

Abstract: The invention provides soluble fusion protein complexes having at least two soluble fusion proteins. The first fusion protein is a biologically active polypeptide covalently linked to an interleukin-15 (IL-15) polypeptide or a functional fragment thereof. The second fusion protein is a second biologically active polypeptide covalently linked to a soluble interleukin-15 receptor alpha (IL-15R?) polypeptide or a functional fragment thereof. In the complexes of the invention, one or both of the first and second fusion proteins further includes an immunoglobulin Fc domain or a functional fragment thereof; and the first fusion protein binds to the soluble IL-15R? domain of the second fusion protein to form a soluble fusion protein complex. The invention further provides methods for making and using the complexes of the invention.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.

Abstract: A dual-camera device is provided. The dual-camera device includes wide and telephoto imaging sections with respective lens/sensor combinations, and a processor. The wide and telephoto imaging sections provide wide image data and telephoto image data, respectively. At least one misalignment error exists between the wide and telephoto imaging sections. The processor generates an output image provided with a smooth transition when switching between a lower zooming factor and a higher zooming factor. The processor warps the wide image data using a portion of the misalignment error to generate base wide image data, and warps the telephoto image data using the remaining portion of the misalignment error to generate base telephoto image data. The processor generates the output image using the base wide image data at the lower zooming factor, and generates the output image using the base telephoto image data at the higher zooming factor.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.

Abstract: Artificial synaptic devices with a HfO2-based ferroelectric layer that can be implemented in the CMOS front-end are provided. In one aspect, a method of forming a FET device is provided. The method includes: forming a shallow STI region in a substrate separating a first active area of the substrate from a second active area of the substrate; forming at least one FeFET on the substrate in the first active area having a ferroelectric material including a HfO2-based material; and forming at least one logic FET alongside the at least one FeFET on the substrate in the second active area, wherein the at least one logic FET has a gate dielectric including the HfO2-based material. A FET device formed by the present techniques is also provided.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract: Artificial synaptic devices with a HfO2-based ferroelectric layer that can be implemented in the CMOS front-end are provided. In one aspect, a method of forming a FET device is provided. The method includes: forming a shallow STI region in a substrate separating a first active area of the substrate from a second active area of the substrate; forming at least one FeFET on the substrate in the first active area having a ferroelectric material including a HfO2-based material; and forming at least one logic FET alongside the at least one FeFET on the substrate in the second active area, wherein the at least one logic FET has a gate dielectric including the HfO2-based material. A FET device formed by the present techniques is also provided.

Abstract: Artificial synaptic devices with an HfO2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400° C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.

Abstract: An integrated circuit includes a circuit unit and an oscillating signal-generating assembly. The circuit unit includes a plurality of first cells. The oscillating signal-generating assembly is configured to generate different oscillating signals and includes a ring oscillator, a signal line, and a switching unit. The ring oscillator includes a plurality of second cells, each of which has an output terminal. The second cells are of the same type as the first cells. The signal line is configured to receive the different oscillating signals. The switching unit is coupled between the ring oscillator and the signal line and is configured to selectively couple the output terminals of the second cells to the signal line. A timing characteristic of a cell of the same type as the first cells can be estimated from the different oscillating signals.

Abstract: A device includes a sensor and an oscillator. The sensor provides a temperature-sensitive voltage. The oscillator includes a digital delay cell and an adjustment device. The adjustment device, based on the temperature-sensitive voltage, adjusts a delay of the digital delay cell, wherein the digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

Abstract: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.

Abstract: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.

Abstract: A method for fabricating a semiconductor device comprises forming a replacement gate structure on a semiconductor layer of a substrate. The replacement gate structure at least including a polysilicon layer. After forming the replacement gate structure, a gate spacer is formed on the replacement gate structure. Atoms are implanted in an upper portion of the polysilicon layer. The implanting expands the upper portion of the polysilicon layer and a corresponding upper portion of the gate spacer in at least a lateral direction beyond a lower portion of the polysilicon layer and a lower portion of the spacer, respectively. After the atoms have been implanted, the polysilicon layer is removed to form a gate cavity. A metal gate stack is formed within the gate cavity. The metal gate stack includes an upper portion having a width that is greater than a width of a lower portion of the metal gate stack.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract: The present invention features compositions and methods featuring ALT-803, a complex of an interleukin-15 (IL-15) superagonist mutant and a dimeric IL-15 receptor ?/Fc fusion protein useful for enhancing an immune response against a neoplasia (e.g., multiple myeloma, melanoma, lymphoma) or a viral infection (e.g., human immunodeficiency virus).

Abstract: The present invention relates to a low loss antenna switch. The antenna switch comprises a plurality of switch module and a plurality of transmitting/receiving terminals, wherein one end of each switch module is connected to an antenna unit and the other end of each switch module is connected to each transmitting and receiving end respectively. Further, each switch module comprises a plurality of switch units in series, wherein the width of at least one switch unit is smaller than other switch units of each switch module. Thus, the parasitic capacitance of the off-stage switch modules can be reduced, and VSWR (Voltage Standing Wave Ratio) of the antenna switch also can be improved.

Abstract: The present invention features compositions and methods featuring ALT-803, a complex of an interleukin-15 (IL-15) superagonist mutant and a dimeric IL-15 receptor ?/Fc fusion protein useful for enhancing an immune response against a neoplasia (e.g., multiple myeloma, melanoma, lymphoma) or a viral infection (e.g., human immunodeficiency virus).

Abstract: A vehicle safety detecting ring includes a ring body, at lease one detector, a touching area and an alarm device. The ring body is configured to mounted on a steering wheel. The at least one detector is located inside the ring body and configured to detect information of driver. The touching area is connected with the at least one detector in the ring body to transmit the information of driver to the at least one detector. The alarm connects with the at least one detector and is configured to issue an alarm when the at least one detector detects an abnormal signal.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.