Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

Abstract: A method includes forming a die, which includes forming a first metal pillar on a first side of a first semiconductor substrate of the die, polishing the first semiconductor substrate of the die to reveal a first through-via in the first semiconductor substrate, and forming a second metal pillar on a second side of the die. The first side and the second side are on opposite sides of the first semiconductor substrate. The method further includes encapsulating the die in an encapsulant, forming a first conductive feature on the first side of the first semiconductor substrate and electrically connecting to the first metal pillar, and forming a second conductive feature on the second side of the first semiconductor substrate and electrically connecting to the second metal pillar.

Abstract: A light emitting substrate has a functional area and a bonding area. The bonding area and the functional area are arranged along a first direction in sequence. The light-emitting substrate includes a substrate, a plurality of functional element groups, and a first electrostatic pathway. The plurality of functional element groups are located on a side of the substrate and located in the functional area. The first electrostatic pathway is located on a same side of the substrate with the plurality of functional element groups. The first electrostatic pathway is electrically connected to the bonding area, a portion of the first electrostatic pathway is located in the functional area, and the first electrostatic pathway is configured to conduct static electricity from the functional area to the bonding area.

Abstract: A light-emitting substrate includes a first substrate, a reflective layer and support columns. The reflective layer is disposed on the first substrate and provided with first openings. At least for two of cross-sections, parallel to a place where the first substrate is located, of a first opening, an area of a cross-section relatively proximate to the first substrate is less than an area of a cross-section relatively away from the first substrate. The support columns are located on a side of the reflective layer away from the first substrate and fixed on the first substrate. An orthographic projection of a support column on the first substrate is a first projection, an orthographic projection a minimum cross-section of the cross-sections is a second projection, and the second projection lies within a range of the first projection.

Abstract: A method includes forming a first conductive pillar on an interposer; forming a second conductive pillar on the interposer, wherein the second conductive pillar includes a barrier layer; bonding a first semiconductor device to the first conductive pillar by a first bonding region that includes more inter-metallic compound than solder; and bonding the first semiconductor device to the second conductive pillar by a second bonding region that includes more solder than inter-metallic compound.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

Abstract: A light emitting element includes a base substrate, light emitting structures on the base substrate, a filling layer among the light emitting structures, a connecting electrode layer, an insulating layer, and pads. The connecting electrode layer is located at a side, away from the base substrate, of the filling layer. The insulating layer is located at a side, away from the filling layer, of the connecting electrode layer. The pads are located at a side, away from the connecting electrode layer, of the insulating layer. Each light emitting structure includes a first pole and a second pole. The connecting electrode layer includes connecting electrodes each connected to the first pole or the second pole of at least one light emitting structure. The light emitting element further includes holes in the insulating layer. The pads are connected to the connecting electrodes through the holes.

Abstract: Provided are an array substrate and an electronic apparatus. The array substrate includes: a base substrate; a first conductive layer on the base substrate, where the first conductive layer includes a plurality of pads, each pad includes a first metal layer, a material of the first metal layer includes Cu, a content of the Cu is greater than or equal to 99%, and a thickness of the first metal layer is greater than 2 ?m; and an electronic element disposed on a side of the first conductive layer facing away from the base substrate, where the electronic element includes an electronic element body and a plurality of pins disposed on a side of the electronic element body facing the base substrate, and the pins are connected with the pads.

Abstract: A semiconductor structure includes a circuit substrate, a semiconductor die, and a cover. The semiconductor die is disposed on the circuit substrate. The cover is disposed over the semiconductor die and over the circuit substrate. The cover comprises a lid portion and a support portion. The structure includes a first adhesive bonding the support portion to the circuit substrate and a second adhesive bonding the support portion and the lid portion.

Abstract: A semiconductor structure includes a circuit substrate, a semiconductor die, and a cover. The semiconductor die is disposed on the circuit substrate. The cover is disposed over the semiconductor die and over the circuit substrate. The cover comprises a lid portion and a support portion. The structure includes a first adhesive bonding the support portion to the circuit substrate and a second adhesive bonding the support portion and the lid portion.

Abstract: Board substrates, three-dimensional integrated circuit structures and methods of forming the same are disclosed. A board substrate includes a core layer, a first build-up layer, a second build-up layer, a first group of bumps, a second first group of bumps and at least one first underfill blocking wall. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The first group of bumps is disposed over the first build-up layer. The second first group of bumps is disposed over the first build-up layer. The at least one first underfill blocking wall is disposed over the first build-up layer and between the first group of bumps and the second group of bumps.

Abstract: Compounds of Formula (I): pharmaceutically acceptable salts thereof, deuterated derivatives of any of the foregoing, and metabolites of any of the foregoing are disclosed. Pharmaceutical compositions comprising the same, methods of treating cystic fibrosis using the same, and methods for making the same are also disclosed.

Abstract: Board substrates, three-dimensional integrated circuit structures and methods of forming the same are disclosed. A board substrate includes a core layer, a first build-up layer, a second build-up layer, a first group of bumps, a second first group of bumps and at least one first underfill blocking wall. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The first group of bumps is disposed over the first build-up layer. The second first group of bumps is disposed over the first build-up layer. The at least one first underfill blocking wall is disposed over the first build-up layer and between the first group of bumps and the second group of bumps.

Abstract: The present application provides an array base plate and a light emitting apparatus, which relates to the technical field of displaying. The array base plate includes: a substrate; and a plurality of electrically-conductive-pad groups located on the substrate, wherein each of the electrically-conductive-pad groups includes at least one electrically conductive pad; the electrically conductive pad includes an electrically conducting layer and a first connecting layer, the first connecting layer is located on one side of the electrically conducting layer away from the substrate, and an orthographic projection of the first connecting layer on the substrate and an orthographic projection of the electrically conducting layer on the substrate at least partially intersect or overlap; and a thickness of the first connecting layer in a thickness direction of the substrate is greater than or equal to a thickness of the electrically conducting layer in the thickness direction of the substrate.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

Abstract: Compounds of Formula (I): pharmaceutically acceptable salts thereof, deuterated derivatives of any of the foregoing, and metabolites of any of the foregoing are disclosed. Pharmaceutical compositions comprising the same, methods of treating cystic fibrosis using the same, and methods for making the same are also disclosed.

Abstract: Compounds of Formula (I): pharmaceutically acceptable salts thereof, deuterated derivatives of any of the foregoing, and metabolites of any of the foregoing are disclosed. Pharmaceutical compositions comprising the same, methods of treating cystic fibrosis using the same, and methods for making the same are also disclosed. Also disclosed are solid state forms of Compound 1 and salts and solvates thereof.