Abstract: A method for transcoding a first codeword to a second codeword, wherein both comprise escape codes and escape levels is disclosed. The method comprises receiving a bitstream to determine the first codeword therefrom, determining whether the first codeword belongs to a long escape mode or a short escape mode, and truncating the escape level of the first codeword to generate the second codeword when the first codeword belongs to the long escape mode. An embodiment of the first codeword is a Sorenson H.263 codeword and the second codeword is an H.263 codeword.

Abstract: Fiber coated nonwoven laminates and methods and lines for making the same are disclosed. The fiber coated nonwoven laminates can have a fiber web layer that can range from about 0.01 g/m2 to about 100 g/m2. The lines for forming the nonwoven laminates can include a die body that includes an extruder therein for extruding fibers and a collector disposed below the die body. A substrate feeder can be provided for directing a substrate over the collector between the die body and the collector. The substrate is combinable with the extruded fibers to form the nonwoven laminate. An electric field can be created between the die body and collector to direct the fibers toward the collector as the substrate passes over the collector to collect the fibers on the substrate.

Abstract: A control system of a three phase induction motor driver and a field weakening control method. The control system includes a driver control module, a field weakening control module, an AC power source, a power loop module, a current sensing module, and an AC motor module. A switching period of an inverter PWM control is used for the AC motor and an inverter control thereof to analyze and obtain the difference value of the sum of effective switching times. The field weakening control module generates an adaptive magnetizing current command in real time to achieve a maximum utilization of a DC link voltage so as to let the AC motor module achieve maximum output torque under different field weakening regions of different speeds when a rated speed is exceeded.

Abstract: The present invention provides a treating unit of activated sludge for wastewater treatment and a treating apparatus having the same. The treating unit is constructed by a cage-shaped supporting structure which defines an interior space for containing the microbial cell therein. The present invention provides a measure for simultaneous removal of organics and nitrogen compounds from the wastewater under a condition of controlled aeration, and makes the configuration of treating apparatus as well as the treating process more simplified. It is also an alternative to replace the traditional A2O process. According to the present invention, the design of sludge return, which is essential for the conventional activated sludge treatment, is not needed. Moreover, the present invention is compatible with the conventional activated sludge treatment process and is advantageous in its short start-up period during which a stable operation is achievable.

Abstract: A method of removing a contact lens by means of a device including a flexible cup comprising a bottom projection and an outward extending rim on an opening, and a suction loop member shaped to assemble with the rim by snapping is provided. The method includes pouring an amount of IV fluid into the cup; adhering the suction loop member to a periphery of the eye by engaging; immersing the contact lens placed on the cornea of the eye in the IV fluid by inverting the cup; and repeatedly pressing and releasing the cup until the contact lens falls onto the projection. Hand contact with the eye is avoided.

Abstract: This invention provides an input device. The input device includes a first casing, a second casing, a button unit, and an expansion part. The second casing is pivotally connected to the first casing. The button unit is connected to the first casing. The expansion part is disposed at the first casing and the second casing. When the input device is in a using state, the first casing and the second casing are coplanar. When the input device is in a storage state, the second casing covers the first casing and the expansion part is compressed.

Abstract: This invention relates to a rate-adaptive method for wireless mesh network in areas of wireless networking technology. In the invention, each node in the wireless mesh network broadcasts probe packets and meanwhile receives probe packets from its neighboring nodes, and maintains a rate priority table in time based on the sending success ratio of probe packets, and then sets up a new dynamic probe queue according to this rate priority table, selectively sending all the probes with rates that are listed in the rate priority table or close to them, and the automatic rate selection is accomplished by decisions on probes' sending success ratio. This invention can adapt to the changes of the network conditions very well, and reduce the influence of route broadcast and convergence on network throughput as much as possible, and at the meantime, it takes the changes in network topology into account, thus is very suitable for conditions with a complex spatial distribution of electromagnetic waves.

Abstract: A secured communication method for Wireless Mesh Network (WMN) in the field of network technology includes initial authentication request, authentication negotiation process of the authentication server and encrypted data communication via pre-shared key and other valid Mesh Point (MP) in the WMN in order to implement the functions of the WMN. The present invention not only meets the new needs of the WMN dynamic self-organization, but also provides the security performance almost the same as the IEEE 802.11 standard requirements. The present invention is easily applied into WMN upon IEEE 802.11 links, and furthermore, the architecture disclosed in the present invention is quite simple and easy to implement with full compatibility and flexibility.

Abstract: A method for transcoding a first codeword to a second codeword, wherein both comprise escape codes and escape levels is disclosed. The method comprises receiving a bitstream to determine the first codeword therefrom, determining whether the first codeword belongs to a long escape mode or a short escape mode, and truncating the escape level of the first codeword to generate the second codeword when the first codeword belongs to the long escape mode. An embodiment of the first codeword is a Sorenson H.263 codeword and the second codeword is an H.263 codeword.

Abstract: An MIM capacitor structure having a metal structure formed thereover is provided. A dielectric layer is disposed over the metal structure and a top layer is disposed over the dielectric layer. A capacitance trench is formed through the top layer and into the dielectric layer. Respective bottom electrodes are formed over the opposing side walls of the capacitance trench. A capacitance dielectric layer is disposed over the respective bottom electrodes, the bottom of the capacitance trench and the remaining top layer. Respective opposing initial via openings are formed adjacent the capacitance trench. Respective trench openings are formed above, continuous and contiguous with the lower portions of the respective opposing initial via openings and exposing portions of the underlying metal structure to form respective opposing dual damascene openings. Planarized metal portions disposed within the dual damascene openings and the capacitance trench form a top electrode.

Abstract: The present invention provides a treating unit of activated sludge for wastewater treatment and a treating apparatus having the same. The treating unit is constructed by a cage-shaped supporting structure which defines an interior space for containing the microbial cell therein. The present invention provides a measure for simultaneous removal of organics and nitrogen compounds from the wastewater under a condition of controlled aeration, and makes the configuration of treating apparatus as well as the treating process more simplified. It is also an alternative to replace the traditional A2O process. According to the present invention, the design of sludge return, which is essential for the conventional activated sludge treatment, is not needed. Moreover, the present invention is compatible with the conventional activated sludge treatment process and is advantageous in its short start-up period during which a stable operation is achievable.

Abstract: Disclosed are high-throughput spectral imaging and spectroscopy apparatus and methods that acquire the property information of measured substance's UV-visible and infrared radiation through using at least one substantially uniform monochromatic incident irradiation source and spatial resolved array detector. The high-throughput analysis is achieved by acquiring a parallel spectral imaging and spectroscopy over a library element substrate. The apparatus and methods include both hardware and software for achieving both spectral imaging and spectroscopic analysis.

Abstract: The present invention provides an insertion-type semiconductor device and a fabrication method thereof, including the steps of: mounting a chip on a BGA substrate and performing a packaging molding process; providing an electrical connecting board formed with a plurality of electrical terminals thereon for allowing the packaged substrate to electrically connect with the electrical terminals on the electrical connecting board via a conductive element thereof; covering a lid to form an insertion-type semiconductor device. As size of the solder pads is much smaller than the electrical terminals of the insertion-type semiconductor device, the area under the semiconductor chip can be reduced to minimize the deformable area of the semiconductor chip when being pressed in the molding process, thereby preventing damage to the semiconductor chip and also meeting the specification requirement of an insertion-type semiconductor device.

Abstract: The present invention discloses a piping design for a high density plasma process chamber, wherein an extra pipe is added to between a process chamber and a mass flow controller, and the extra pipe together with a pump is used to drain out the gas, which cannot be monitored by the mass flow controller and survives in a gas injection pipe, lest the remaining gas pollute the deposited film or react with the process gas to induce an explosion in the succeeding deposition process.

Abstract: A method of treating wastewater using an anaerobic bioreactor which contains a “bio-nest” structure to retain the microbial content and improve digestion efficiency is disclosed. The bionest system results in a longer SRT, good sludge mixing, and reduced wash-out of sludge. The system is particularly useful for treatment of lipid rich wastewater such as dairy wastewater.

Abstract: An MIM capacitor structure having a metal structure formed thereover is provided. A dielectric layer is disposed over the metal structure and a top layer is disposed over the dielectric layer. A capacitance trench is formed through the top layer and into the dielectric layer. Respective bottom electrodes are formed over the opposing side walls of the capacitance trench. A capacitance dielectric layer is disposed over the respective bottom electrodes, the bottom of the capacitance trench and the remaining top layer. Respective opposing initial via openings are formed adjacent the capacitance trench. Respective trench openings are formed above, continuous and contiguous with the lower portions of the respective opposing initial via openings and exposing portions of the underlying metal structure to form respective opposing dual damascene openings. Planarized metal portions disposed within the dual damascene openings and the capacitance trench form a top electrode.

Abstract: As shown in FIG. 10, using photoresist capacitance trench masking portion 43 as a mask, the exposed portions 70, 72 of the patterned capacitance dielectric layer 32? between the respective initial via openings 36, 38 and the capacitance trench masking portion 43, the underlying twice patterned ARC 18? and the underlying twice patterned oxide layer 16? are etched down to a depth substantially equal to the bottom of the capacitance trench 25 to form respective trench openings 56, 58 contiguous and continuous with respective final via openings 52, 54, in turn forming respective dual damascene openings 57, 59. Final via openings 52, 54 expose underlying portions 78 of metal structure 12 and bottom electrodes 30?, 30?. Capacitance trench 25 includes sidewalls 50 formed of remaining portions of capacitance dielectric layer 32?.

Abstract: An edge backlight module and liquid crystal display utilizing the same. The edge backlight module comprises a light source module, a light guide plate, and a reflective back plate. The reflective back plate has a reflective surface and a wraparound end facing the reflective surface. The light guide plate is disposed at the reflective surface of the reflective back plate, and an end of the light guide plate is connected to the wraparound end forming a cavity therebetween. The light source module is disposed in the cavity. A reflective layer can be formed by die casting or coated on the reflective surface of the reflective back plate.

Abstract: A method of forming a MIM capacitor, and the resultant MIM capacitor, comprising the following steps. A structure having a metal structure formed thereover is provided. A dielectric layer is formed over the metal structure and a top layer is formed over the dielectric layer. A capacitance trench is formed through the top layer and into the dielectric layer. Respective bottom electrodes are formed over the opposing side walls of the capacitance trench. A capacitance dielectric layer is formed over: the respective bottom electrodes: the bottom of the capacitance trench; and the remaining top layer. Respective opposing initial via openings are formed adjacent the capacitance trench. Respective trench openings are formed above, continuous and contiguous with the lower portions of the respective opposing initial via openings and exposing portions of the underlying metal structure to form respective opposing dual damascene openings.

Abstract: A method for fabricating a flash memory is described. A stacked gate structure and a source/drain are formed on a substrate. An inter-layer dielectrics and a plurality of inter-metal dielectric layers are then formed over the substrate, wherein at least one layer among the inter-layer dielectrics and the inter-metal dielectric layers has a silicon carbide layer formed thereon. The silicon carbide layer is formed to protect the memory device from an UV irradiation, so as to prevent data errors occurring in the memory device.