Abstract: A foldable display device includes a first panel having a first flat portion and a first bending portion at one side of the first flat portion. The first bending portion has a first bending axis around which the first bending portion rotates. The foldable display device also includes a second panel having a second flat portion and a second bending portion at one side of the second flat portion. The second bending portion has a second bending axis around which the second bending portion rotates. The first bending portion and the second bending portion are arranged adjacent to each other.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes an epitaxial layer and a dielectric layer. The epitaxial layer and the dielectric layer are formed in a deep trench of a semiconductor substrate. The epitaxial layer covers a lower portion of sidewall of the trench, and the dielectric layer covers an upper portion of the sidewall of the trench. In the method for fabricating the optical isolation structure, at first, shallow trenches are formed in the semiconductor substrate. Then, the dielectric layer is formed in the shallow trenches. Thereafter, deep trenches are formed passing through the dielectric layers. Then, the epitaxial layer is formed in the deep trenches.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: The present invention discloses a method for detecting skin conditions, and the method includes the steps of: capturing a skin image from a suspected subject; decomposing the skin image into an RBX image through RBX color-space transformation; and determining skin condition of the subject according to a parameter of a color model of the RBX image.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: Systems and methods relate to encoded video streams including geometric-data streams transmitted to a receiver for rendering of a viewpoint-adaptive 3D persona. A method includes obtaining a three-dimensional (3D) mesh of a subject generated from depth-camera-captured information about the subject, obtaining a facial-mesh model, locating a facial portion of the obtained 3D mesh of the subject, computing a geometric transform based on the facial portion and the facial-mesh model, the geometric transform determined in response to one or more aggregated error differences between a plurality of feature points on the facial-mesh model and a plurality of corresponding feature points on the facial portion of the obtained 3D mesh, generating a transformed facial-mesh model using the geometric transform and generating a hybrid mesh of the subject at least in part by combining the transformed facial-mesh model and at least a portion of the obtained 3D mesh.

Abstract: Systems and methods relate to encoded video streams including geometric-data streams transmitted to a receiver for rendering of a viewpoint-adaptive 3D persona. A method includes obtaining a three-dimensional (3D) mesh of a subject generated from depth-camera-captured information about the subject, obtaining a facial-mesh model, locating a facial portion of the obtained 3D mesh of the subject, computing a geometric transform based on the facial portion and the facial-mesh model, the geometric transform determined in response to one or more aggregated error differences between a plurality of feature points on the facial-mesh model and a plurality of corresponding feature points on the facial portion of the obtained 3D mesh, generating a transformed facial-mesh model using the geometric transform and generating a hybrid mesh of the subject at least in part by combining the transformed facial-mesh model and at least a portion of the obtained 3D mesh.

Abstract: Apparatuses, systems and methods for mitigation and detection of drone-based interference are disclosed. An apparatus for a base station can include processing circuitry to encode a message to control a user equipment (UE) to measure received power received from a set of observed cells in a wireless communication network. Processing circuitry can further be configured to receive a report from the UE that includes received power for the set of observed cells. The processing circuitry can further determine interference power from the UE to a specified cell of the set of observed cells based on the report and further based on reported antenna gain. The processing circuitry can further determine whether to support communication of the UE within the wireless communication network based on the determined interference power from the UE. Other systems, methods and apparatuses are described.

Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Abstract: Systems and methods relate to encoded video streams including geometric-data streams transmitted to a receiver for rendering of a viewpoint-adaptive 3D persona. A method includes obtaining a three-dimensional (3D) mesh of a subject generated from depth-camera-captured information about the subject, obtaining a facial-mesh model, locating a facial portion of the obtained 3D mesh of the subject, computing a geometric transform based on the facial portion and the facial-mesh model, the geometric transform determined in response to one or more aggregated error differences between a plurality of feature points on the facial-mesh model and a plurality of corresponding feature points on the facial portion of the obtained 3D mesh, generating a transformed facial-mesh model using the geometric transform and generating a hybrid mesh of the subject at least in part by combining the transformed facial-mesh model and at least a portion of the obtained 3D mesh.

Abstract: A system and method for performing layer treatment for skin blemish in which the target area of the skin is first treated by performing a deep layer treatment by cutting the fibrous bands and then performing a superficial skin treatment by using electromagnetic radiation and both of the treatment take place within the same day.

Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes an epitaxial layer and a dielectric layer. The epitaxial layer and the dielectric layer are formed in a deep trench of a semiconductor substrate. The epitaxial layer covers a lower portion of sidewall of the trench, and the dielectric layer covers an upper portion of the sidewall of the trench. In the method for fabricating the optical isolation structure, at first, shallow trenches are formed in the semiconductor substrate. Then, the dielectric layer is formed in the shallow trenches. Thereafter, deep trenches are formed passing through the dielectric layers. Then, the epitaxial layer is formed in the deep trenches.

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

Abstract: A system and method for performing layer treatment for skin blemish in which the target area of the skin is first treated by performing a deep layer treatment by cutting the fibrous bands and then performing a superficial skin treatment by using electromagnetic radiation and both of the treatment take place within the same day.