Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a plurality of recesses extending about and radially outward of the plurality of apertures.

Abstract: Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.

Abstract: In order to assess the achievability of treatment goals for a radiation therapy treatment, an estimation unit generates a treatment plan for the radiation therapy treatment only on the basis of treatment goals relating to a target structure to obtain a first dose distribution, (i) segments the region of the patient's body into a plurality of concentric shells surrounding the target structure and determines a mean radiation dose assigned to each shell in accordance with the first dose distribution, and (iii) checks whether a further dose distribution can be determined, which fulfills the treatment goals relating to at least one structure at risk and, which is configured such that the mean radiation dose assigned to each shell in accordance with the further dose distribution corresponds to the mean radiation dose assigned to the same shell in accordance with the first dose distribution.

Abstract: Disclosed are systems and methods for forecasting inbound telecommunications, and more particularly, for analyzing real-time and historical call center data, and applying a forecasting model to said data in order to predict inbound call volume. Additionally, tools are disclosed for manipulating call center data and generating visual representations of metrics pertaining to forecasting call center data via a dashboard.

Abstract: Methods, devices, and systems for facilitation of communication between participants of an electronic marketplace involve receiving a message generated from a market participant and transmitting the message to other market participants. The facilitation also involves receiving responses to the message from the other market participants and transmitting the responses to the message originating market participant such that the transmitted response is imperceptible to the other market participants.

Abstract: A workflow development system is described that provides a developer with a search utility for finding steps for inclusion in a workflow. The system also automatically generates a meaningful name and/or graphical representation for a workflow. The system also provides a graphical user interface that represents output parameters of a first workflow step as user-interactive objects. These objects can be interacted with to cause the objects to be inserted into a data entry element that is used to specify a value for an input parameter of a second workflow step. When executable logic representing the first and second workflow steps is generated, the insertion of the objects into the data entry element has the effect of causing the value of the input parameter of the second workflow step to be defined to include the values of the output parameters that correspond to the inserted objects.

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.

Abstract: An example material includes a planar layer of MFI zeolite. The planar layer has a thickness in a range between 4 nm and 10 nm for at least 70% of a basal area of the planar layer. In one embodiment, the planar layer includes an embedded particle of an MFI zeolite.

Abstract: A method and an apparatus for adjusting an optimal exposure of a camera are provided. The method may include: receiving a camera start command to activate a camera of an electronic device; capturing an image frame of a scene by the camera; obtaining an Exposure Brightness Response (EBR) of the camera; providing the EBR and the image frame as an input to a pre-trained neural network specific to the camera; and determining a plurality of exposure parameters of the camera and a mean pixel brightness (MPB) by using the pre-trained neural network.

Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.

Abstract: Methods, devices, and systems for facilitation of communication between participants of an electronic marketplace involve receiving a message generated from a market participant and transmitting the message to other market participants. The facilitation also involves receiving responses to the message from the other market participants and transmitting the responses to the message originating market participant such that the transmitted response is imperceptible to the other market participants.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: The present invention relates to a process for the production of a thermoplastic polyester using a reaction mixture comprising a dicarboxylic acid having a melting temperature of ?200° C. wherein the dicarboxylic acid is introduced to the process in the form of particles having an average particle diameter of ?100 ?m. Such process results in a reduction of the polymerisation time. Furthermore, it allows for the production of thermoplastic polyesters having a desired balance of intrinsic viscosity and carboxylic end group content at a reduced polymerisation time.

Abstract: A radiation therapy planning system (100) includes a radiation therapy optimization unit (124), which receives at least one target structure and at least one organ-at-risk (OAR) structure segmented from a volumetric image, and generates an optimized plan (126) based on at least one modified objective function. The optimized plan (126) includes a planned radiation dose for each voxel.

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

Abstract: A method of calibrating a soot load estimating function for a diesel particulate filter uses radio frequency attenuation measurement and temperature measurements. The method comprises identifying a minimum mean attenuation value associated with a standard deviation that exceeds a standard deviation threshold and using this minimum mean attenuation value as a reference value. The method further comprises using a data library that contains gradient values for each of a range of possible temperature values to obtain a first gradient value, the first gradient value corresponding to the first temperature value, wherein each gradient value relates to the gradient of a linear approximation between mean attenuation and soot load at the corresponding temperature. The method involves using the reference value and the first gradient value to determine an axis intercept value for use as an offset value and adopting the offset value as a temperature-independent calibration value for the diesel particulate filter.

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a central recess about the central axis extending from the second surface of the faceplate to a depth less than a thickness of the faceplate.

Abstract: The invention relates to a system and method for generating a radiotherapy treatment plan on the basis of treatment goals comprising optimization objectives and/or constraints. A planning unit (7) generates a first treatment plan including treatment parameters for fulfilling first treatment goals in a first optimization cycle, and a decision unit (8) receives second treatment goals and compares the first and second treatment goals to 5 determine a modification of the treatment goals, assigns to the modification a category from a plurality of predetermined categories, wherein to each category a strategy from a plurality of predetermined strategies for treatment plan generation is allocated, and instructs the planning unit (7) to generate the second treatment plan in accordance with a strategy allocated to the determined category of modifications in a second optimization cycle.

Abstract: A computing system may obtain code for a query to a database from a first user. In response, the application may automatically perform an operation to determine a number of records of the database that would be accessed by executing the query on the database. The computing system may output, for display to the first user, the number of records of the database that would be accessed by executing the query on the database. The computing system may output, for display to the first user, a prompt for an acknowledgement of the number of records of the database that would be accessed. In response to receiving an indication of the acknowledgement by the first user of the number of records of the database that would be accessed, the computing system may output, for display to a second user, the code for the query for review by the second user.

Abstract: Exemplary methods of semiconductor processing may include treating a surface of a substrate with a hydrogen-containing precursor. The substrate may be disposed within a processing region of a semiconductor processing chamber. The methods may include contacting the substrate with a tungsten-containing precursor. The methods may include forming an initiation layer comprising tungsten on the substrate. The methods may include treating the initiation layer with a hydrogen-containing precursor. The methods may include forming a plasma of the tungsten-containing precursor and a carbon-containing precursor. Hydrogen in the plasma may be limited to hydrogen included in the carbon-containing precursor. The methods may include forming a tungsten-containing hardmask layer on the initiation layer.