Abstract: A workflow development system is described herein that includes a graphical user interface (GUI) that is configured to selectively and dynamically allocate relatively more of a display area to a particular one of a plurality of different, simultaneously-displayed workflow step representations than is allocated to the other workflow step representation(s) to facilitate user interaction the particular workflow step representation. Such allocation may be carried out in response to user interaction with the particular workflow step representation or in response to a determination that a user is otherwise focused on the particular workflow step representation. In embodiments, the workflow step representations represent different workflow steps in a series of workflow steps. In further embodiments, the workflow step representations represent different workflow steps that may be performed depending upon the evaluation of a condition.

Abstract: One or more embodiments described herein generally relate to methods for chucking and de-chucking a substrate to/from an electrostatic chuck used in a semiconductor processing system. Generally, in embodiments described herein, the method includes: (1) applying a first voltage from a direct current (DC) power source to an electrode disposed within a pedestal; (2) introducing process gases into a process chamber; (3) applying power from a radio frequency (RF) power source to a showerhead; (4) performing a process on the substrate; (5) stopping application of the RF power; (6) removing the process gases from the process chamber; and (7) stopping applying the DC power.

Abstract: A system and method for forming a film includes generating a plasma in a processing volume of a processing chamber to form the film on a substrate. The processing chamber may include a gas distributor configured to generate the plasma in the processing volume. Further, a barrier gas is provided into the processing volume to form a gas curtain around a plasma located in the processing volume. The barrier gas is supplied by a gas supply source through an inlet port disposed along a first side of the processing chamber. Further, an exhaust port is disposed along the first side of the processing chamber and the plasma and the barrier gas is purged via the exhaust port.

Abstract: Systems and methods are described for generating automatic illustrator guides. The method may include generating a plurality of candidate guides for a digital image (e.g., using an automated shape detection engine), where each of the plurality of candidate guides is a simple shape such as a line or a circle, combining at least two of the candidate guides based on the shape information to create refined candidate guides, generating a pixel coverage map for each of the refined candidate guides, prioritizing the refined candidate guides based on the corresponding pixel coverage maps, selecting one or more drawing guides from the one or more refined candidate guides based on the prioritization, and displaying the digital image along with the one or more drawing guides.

Abstract: A system and method of nurturing one or more leads is provided. Initially, an indication that a lead has interacted with an ecommerce site may be received, where the indication includes information uniquely identifying the lead and one or more interactions with the ecommerce site. Contact information for the lead may be retrieved. The lead may then be qualified based on the information identifying one or more interactions with the ecommerce site. The lead may then be associated with at least one of a sales professional or sales group and a template may be selected based on the at least one of the sales professional or sales group. Accordingly, a communication message, which may be an email, may be sent to the lead utilizing the contact information and the selected template, where the communication message includes sender information associated with at least one of the sales professional or sales group.

Abstract: Disclosed are systems and methods for forecasting inbound telecommunications, and more particularly, for analyzing real-time and historical call center data, and applying a forecasting model to said data in order to predict inbound call volume. Additionally, tools are disclosed for manipulating call center data and generating visual representations of metrics pertaining to forecasting call center data via a dashboard.

Abstract: Embodiments of the present disclosure generally relate to a method of processing a substrate. The method includes exposing the substrate positioned in a processing volume of a processing chamber to a hydrocarbon-containing gas mixture, exposing the substrate to a boron-containing gas mixture, and generating a radio frequency (RF) plasma in the processing volume to deposit a boron-carbon film on the substrate. The hydrocarbon-containing gas mixture and the boron-containing gas mixture are flowed into the processing volume at a precursor ratio of (boron-containing gas mixture/((boron-containing gas mixture)+hydrocarbon-containing gas mixture) of about 0.38 to about 0.85. The boron-carbon hardmask film provides high modulus, etch selectivity, and stress for high aspect-ratio features (e.g., 10:1 or above) and smaller dimension devices (e.g., 7 nm node or below).

Abstract: The invention relates to a system and method for generating a radiotherapy treatment plan on the basis of treatment goals comprising optimization objectives and/or constraints. A planning unit (7) generates a first treatment plan including treatment parameters for fulfilling first treatment goals in a first optimization cycle, and a decision unit (8) receives second treatment goals and compares the first and second treatment goals to 5 determine a modification of the treatment goals, assigns to the modification a category from a plurality of predetermined categories, wherein to each category a strategy from a plurality of predetermined strategies for treatment plan generation is allocated, and instructs the planning unit (7) to generate the second treatment plan in accordance with a strategy allocated to the determined category of modifications in a second optimization cycle.

Abstract: A programmable divider is provided. The programmable divider includes a clock input coupled to receive a clock signal, a control input coupled to receive a first control signal, a counter compare block, and a load block. The counter compare block is configured to receive a first load value, update a counter with the first load value, provide a first output signal, and when the first control signal is at a first value, generate a first pulse in the first output signal when the counter reaches an end value. The load block is configured to receive a first divider value and provide the first load value based on a current counter value of the counter.

Abstract: Implementations of the disclosure generally relate to a method of cleaning a semiconductor processing chamber. In one implementation, a method of cleaning a deposition chamber includes flowing a nitrogen containing gas into a processing region within the deposition chamber, striking a plasma in the processing region utilizing a radio frequency power, introducing a cleaning gas into a remote plasma source that is fluidly connected to the deposition chamber, generating reactive species of the cleaning gas in the remote plasma source, introducing the cleaning gas into the deposition chamber, and removing deposits on interior surfaces of the deposition chamber at different etch rates.

Abstract: Embodiments described herein relate to methods and tools for monitoring electrostatic chucking performance. A performance test is performed that requires only one bowed substrate and one reference substrate. To run the test, the reference substrate is positioned on an electrostatic chuck in a process chamber and the bowed substrate is positioned on the reference substrate. A voltage is applied from a power source to the electrostatic chuck, generating an electrostatic chucking force to secure the bowed substrate to the reference substrate. Thereafter, the applied voltage is decreased incrementally until the electrostatic chucking force is too weak to maintain the bowed substrate in flat form, resulting in dechucking of the bowed wafer. By monitoring the impedance of the chamber during deposition using a sensor, the dechucking threshold voltage can be identified at the point where the impedance of the reference substrate and the impedance of the bowed substrate deviates.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.

Abstract: Implementations described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate. In one implementation, a method of forming an amorphous carbon film is provided. The method comprises depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further comprises implanting a dopant or inert species into the amorphous carbon film in a second processing region. The dopant or inert species is selected from carbon, boron, nitrogen, silicon, phosphorous, argon, helium, neon, krypton, xenon or combinations thereof. The method further comprises patterning the doped amorphous carbon film. The method further comprises etching the underlayer.

Abstract: Techniques for efficient roaming of clients between access points (APs) of a wireless data communications network are described. A first AP can receive a request for the first client to join the network. The request can specify a unique identifier for the first client. An identifier for a second AP can be determined by processing the unique identifier for the first client using a predefined hash function. A network address of the second AP can be determined using the determined identifier for the second AP. The first AP can transmit a request to the determined network address of the second AP to query for network state information corresponding to the first client, and upon receiving a pairwise master key (PMK) associated with the first client, can authenticate the first client to join the network.

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Offers are distributed by providing a plurality of offers to a first user and directing the first user to distribute the offers to selected additional users. The plurality of offers may be customized by the system and may be further customized by the first user before sending the offers to the selected additional users. The additional users may include any user including known and/or unknown users and/or contacts in the first's user networks including business and/or social networks. The system may also track and store information relating to the distribution, access, and redemption of the offer by the first user and the selected additional users and provide additional incentives based upon the access and redemption, and based upon interactions between the first user and the selected additional users. The system may further distribute restricted offers to selected users, and/or allow selected users to share restricted offers with additional users.

Abstract: Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Abstract: Devices and techniques are disclosed herein which include a first LED device layer, a second LED device layer, and an adhesive bondline disposed between the first LED device layer and the second LED device layer. The adhesive bondline includes a bondline thickness, a plurality of spacers disposed within the adhesive bondline, and a silicone matrix. The plurality of spacers may have a diameter or a shortest axis between 0.5 and 10 micrometers and the coefficient of variation is 10% or less. The plurality of spacers may be include SiO2, alumina, soda lime glass, may be inorganic, or polymeric.

Abstract: Embodiments of the invention generally relate to methods for removing a boron-carbon layer from a surface of a processing chamber using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a processing chamber includes positioning the pedestal at a first distance from the showerhead, and exposing a deposited boron-carbon layer to a first plasma process where the first plasma process comprises generating a plasma that comprises water vapor and a first carrier gas by biasing a showerhead that is disposed over a pedestal, and positioning the pedestal at a second distance from the showerhead and exposing the deposited boron-carbon layer to a second plasma process where the second plasma process comprises generating a plasma that comprises water vapor and a second carrier gas by biasing the showerhead and biasing a side electrode relative to the showerhead.