Patents by Inventor Prashant Kumar

Prashant Kumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • REDUCED DEFECT DEPOSITION PROCESSES
    Publication number: 20210130949
    Abstract: Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.
    Type: Application
    Filed: October 27, 2020
    Publication date: May 6, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Xiaoquan Min, Byung Ik Song, Hyung Je Woo, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Lee
  • Systems and methods for forecasting inbound telecommunications associated with an electronic transactions subscription platform
    Patent number: 10986233
    Abstract: Systems and methods forecast inbound telecommunications, and more particularly, analyze real-time and historical call center data, and apply a forecasting model to the data in order to predict inbound call volume. These systems and methods employ tools that manipulate call center data and generate visual representations of metrics pertaining to forecasting call center data via a dashboard.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: April 20, 2021
    Assignee: CaaStle, Inc.
    Inventors: Avinash Singh, Prashant Kumar Rai, Chirag Jain, Ankita Sinha
  • Ultra-high modulus and etch selectivity boron carbon hardmask films
    Patent number: 10971364
    Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: April 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Karthik Thimmavajjula Narasimha, Kwangduk Douglas Lee, Bok Hoen Kim
  • Automatic illustrator guides
    Patent number: 10957080
    Abstract: Systems and methods are described for generating automatic illustrator guides. The method may include generating a plurality of candidate guides for a digital image (e.g., using an automated shape detection engine), where each of the plurality of candidate guides is a simple shape such as a line or a circle, combining at least two of the candidate guides based on the shape information to create refined candidate guides, generating a pixel coverage map for each of the refined candidate guides, prioritizing the refined candidate guides based on the corresponding pixel coverage maps, selecting one or more drawing guides from the one or more refined candidate guides based on the prioritization, and displaying the digital image along with the one or more drawing guides.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: March 23, 2021
    Assignee: ADOBE INC.
    Inventors: Tarun Gehlaut, Tarun Beri, Prashant Kumar Singh
  • SYSTEMS AND METHODS OF FORMATION OF A METAL HARDMASK IN DEVICE FABRICATION
    Publication number: 20210082696
    Abstract: A method of and system for substrate fabrication is disclosed herein. The method includes performing a first plasma-enhanced surface treatment in a chamber prior to disposal of a substrate, then, subsequently, depositing a season material in the process chamber. After depositing the plurality of season materials in the process chamber, a substrate is disposed in the chamber. The substrate is positioned in the process chamber in contact with the season material. A substrate treatment is performed. The substrate treatment can include one or more of: performing a second plasma-enhanced surface treatment, forming a barrier layer on the substrate, or performing a low frequency RF treatment prior to forming a metal-based hardmask film on the substrate. The metal-based hardmask film includes one or more metals.
    Type: Application
    Filed: March 1, 2019
    Publication date: March 18, 2021
    Inventors: Xiaoquan MIN, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Vinay K. PRABHAKAR
  • Deposition of metal silicide layers on substrates and chamber components
    Patent number: 10950445
    Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: March 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Prashant Kumar Kulshreshtha, Jiarui Wang, Kwangduk Douglas Lee, Milind Gadre, Xiaoquan Min, Paul Connors
  • Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films
    Patent number: 10930475
    Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: February 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Abdul Aziz Khaja, Zheng John Ye, Amit Kumar Bansal
  • Selective deposition of hardmask
    Patent number: 10923334
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Satya Thokachichu, Edward P. Hammond, IV, Viren Kalsekar, Zheng John Ye, Sarah Michelle Bobek, Abdul Aziz Khaja, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Douglas Lee
  • PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF CARBON HARD-MASK
    Publication number: 20210043455
    Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.
    Type: Application
    Filed: March 21, 2019
    Publication date: February 11, 2021
    Inventors: Byung Seok KWON, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Bushra AFZAL, Sungwon HA, Vinay K. PRABHAKAR, Viren KALSEKAR, Satya Teja Babu THOKACHICHU, Edward P. HAMMOND, IV
  • ELECTROSTATIC CHUCK FOR DAMAGE-FREE SUBSTRATE PROCESSING
    Publication number: 20210025056
    Abstract: Embodiments of the disclosure relate to an improved electrostatic chuck for use in a processing chamber to fabricate semiconductor devices. In one embodiment, a processing chamber includes a chamber body having a processing volume defined therein and an electrostatic chuck disposed within the processing volume. The electrostatic chuck includes a support surface with a plurality of mesas located thereon, one or more electrodes disposed within the electrostatic chuck, and a seasoning layer deposited on the support surface over the plurality of mesas. The support surface is made from an aluminum containing material. The one or more electrodes are configured to form electrostatic charges to electrostatically secure a substrate to the support surface. The seasoning layer is configured to provide cushioning support to the substrate when the substrate is electrostatically secured to the support surface.
    Type: Application
    Filed: October 8, 2018
    Publication date: January 28, 2021
    Inventors: Prashant Kumar KULSHRESHTHA, Zheng John YE, Kwangduk Douglas LEE, Dong Hyung LEE, Vinay PRABHAKAR, Juan Carlos ROCHA-ALVAREZ, Xiaoquan MIN
  • Continuous process for making polybutylene terephthalate using purified terephthalic acid and 1,4-butane diol
    Patent number: 10899875
    Abstract: A device for making polybutylene terephthalate includes (1) a slurry paste vessel; (2) a tower reactor to which a mixture of 1,4-butane diol and terephthalic acid from vessel (1) is supplied, the tower reactor having a plurality of reactor zones wherein the lower third of the tower reactor is in the form of a hydrocyclone with attached heat exchanger, and the hydrocyclone has a supply line from vessel (1), the hydrocyclone being connected to the top side of the tower reactor; (3) a first continuously stirred tank reactor to which the product from tower reactor (2) is supplied; (4) an optional second continuously stirred tank reactor to which the product from (3) is supplied; (5) a dual shaft ring reactor to which the product from stirred tank reactor (3) or (4), is supplied; and (6) a pelletizer where the product from dual shaft ring reactor (5) is continuously fed and pelletized.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: January 26, 2021
    Assignee: SABIC GLOBAL TECHNOLOGIES B.V.
    Inventors: Husnu Alp Alidedeoglu, Prashant Kumar, Brian Bougher, Cornelis Adrianus Maria van Gool, Sasi Sethumadhavan Kannamkumarath, Bing Zhou
  • RESOLVING SPONTANEOUS ARCING DURING THICK FILM DEPOSITION OF HIGH TEMPERATURE AMORPHOUS CARBON DEPOSITION
    Publication number: 20210017645
    Abstract: Embodiments of the present invention generally relate to an apparatus for reducing arcing during thick film deposition in a plasma process chamber. In one embodiment, an edge ring including an inner edge diameter that is about 0.28 inches to about 0.38 inches larger than an outer diameter of a substrate is utilized when depositing a thick (greater than two microns) layer on the substrate. The layer may be a dielectric layer, such as a carbon hard mask layer, for example an amorphous carbon layer. With the 0.14 inches to 0.19 inches gap between the outer edge of substrate and the inner edge of the edge ring during the deposition of the thick layer, substrate support surface arcing is reduced while the layer thickness uniformity is maintained.
    Type: Application
    Filed: April 9, 2019
    Publication date: January 21, 2021
    Inventors: Lu XU, Byung Seok KWON, Viren KALSEKAR, Vinay K. PRABHAKAR, Prashant Kumar KULSHRESHTHA, Dong Hyung LEE, Kwangduk Douglas LEE
  • METHOD OF PREPARATION OF DEHYDROGENATION CATALYST WITH HIGH CHROMIUM CONTENT
    Publication number: 20210001316
    Abstract: A method for the dehydrogenation of lower alkanes is disclosed. The method employs a chromium-alumina dehydrogenation catalyst with high chromium content supported on eta-alumina. The catalyst contains greater than 25 percent by weight chromium in the form of chromium (III) oxide, and exhibits extended stability over traditional alkane dehydrogenation catalysts.
    Type: Application
    Filed: February 22, 2019
    Publication date: January 7, 2021
    Inventors: Biju Maippan DEVASSY, Rekha MAHADEVAIAH, Prashant Kumar Raichur KRISHTACHARYA, Vinod Sankaran NAIR
  • SYSTEMS AND METHODS FOR DISTRIBUTING CUSTOMIZABLE AND SHAREABLE TIERED OFFERS
    Publication number: 20210004852
    Abstract: Offers are distributed by providing a plurality of offers to a first user and directing the first user to distribute the offers to selected additional users. The plurality of offers may be customized by the system based on the first user's previous interactions with the system, and may be further customized by the first user before sending the offers to the selected additional users. The additional users may include any user including known and/or unknown users and/or contact in the first's user networks including business and/or social networks. The system may also track and store information relating to the distribution, access, and redemption of the offer by the first user and the selected additional users and provide additional incentives based upon the access and redemption, and based upon interactions between the first user and the selected additional users.
    Type: Application
    Filed: July 20, 2020
    Publication date: January 7, 2021
    Inventors: Eran Avigdor Lendner, Prashant Kumar, Mark Seth Bonchek, Vanina Delobelle Chateau-Artaud, Justin Marcus Cassey, Llona Piwko
  • Pre-optimization method for quick prediction of achievability of clinical goals in intensity modulated radiation therapy
    Patent number: 10881875
    Abstract: An achievability estimate is computed for an intensity modulated radiation therapy (IMRT) geometry (32) including a target volume, an organ at risk (OAR), and at least one radiation beam. Namely, a geometric complexity (GC) metric is computed for the IMRT geometry that compares a number NT of beamlets of the at least one radiation beam available in the IMRT geometry for irradiating the target volume and a number n of these beamlets that also pass through the OAR. A GC metric ratio is computed of the GC metric for the IMRT geometry and the GC metric for a reference IMRT geometry for which an IMRT plan is achievable. If the clinician is satisfied with this estimate then optimization (38) of an IMRT plan for the IMRT geometry (32) is performed. Alternatively, a reference IMRT geometry is selected by comparing the GC metric with GC metrics of past IMRT plans.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: January 5, 2021
    Assignee: KONINKLIJKE PHILIPS N.V.
    Inventors: Vaitheeswaran Ranganathan, Prashant Kumar, Karl Antonin Bzdusek
  • METHODS OF REDUCING CHAMBER RESIDUES
    Publication number: 20200362457
    Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.
    Type: Application
    Filed: April 24, 2020
    Publication date: November 19, 2020
    Inventors: Liangfa HU, Prashant Kumar KULSHRESHTHA, Anjana M. PATEL, Abdul Aziz KHAJA, Viren KALSEKAR, Vinay K. PRABHAKAR, Satya Teja Babu THOKACHICHU, Byung Seok KWON, Ratsamee LIMDULPAIBOON, Kwangduk Douglas LEE, Ganesh BALASUBRAMANIAN
  • METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE
    Publication number: 20200365441
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.
    Type: Application
    Filed: April 22, 2020
    Publication date: November 19, 2020
    Inventors: Liangfa HU, Abdul Aziz KHAJA, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Yoichi SUZUKI
  • FAST ROAMING AND UNIFORM POLICY FOR WIRELESS CLIENTS WITH DISTRIBUTED HASHING
    Publication number: 20200359273
    Abstract: Techniques for efficient roaming of clients between access points (APs) of a wireless data communications network are described. A first AP receives a request for a first client device to join the network. The request specifies at least a unique identifier for the first client device. An identifier for a second AP is identified by processing the unique identifier using a predefined hash function. The second AP is one of at least two APs configured to each redundantly store network state information relating to the first client device. A network address of the second AP is determined. A first request to is transmitted to the network address, for network state information including a pairwise master key (PMK) and profile information. The PMK and the profile information are received. The first client device is authenticated and a connection is established between the first client device and the network.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Prashant KUMAR, Tirthankar GHOSE
  • HIGHLY ETCH SELECTIVE AMORPHOUS CARBON FILM
    Publication number: 20200357640
    Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Inventors: Rajesh PRASAD, Sarah BOBEK, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Harry WHITESELL, Hidetaka OSHIO, Dong Hyung LEE, Deven Matthew RAJ MITTAL, Scott FALK, Venkataramana R. CHAVVA
  • DEPOSITION OF METAL SILICIDE LAYERS ON SUBSTRATES AND CHAMBER COMPONENTS
    Publication number: 20200357643
    Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.
    Type: Application
    Filed: July 29, 2020
    Publication date: November 12, 2020
    Inventors: Prashant Kumar KULSHRESHTHA, Jiarui WANG, Kwangduk Douglas LEE, Milind GADRE, Xiaoquan MIN, Paul CONNORS