Abstract: Methods and apparatuses for depositing material into high aspect ratio features, features in a multi-laminate stack, features having positively sloped sidewalls, features having negatively sloped sidewalls, features having a re-entrant profile, and/or features having sidewall topography are described herein. Methods involve depositing a first amount of material, such as a dielectric (e.g., silicon oxide), into a feature and forming a sacrificial helmet on the field surface of the substrate, etching some of the first amount of the material to open the feature opening and/or smoothen sidewalls of the feature, and depositing a second amount of material to fill the feature. The sacrificial helmet may be the same as or different material from the first amount of material deposited into the feature.

Abstract: Methods and apparatuses for depositing material into high aspect ratio features, features in a multi-laminate stack, features having positively sloped sidewalls, features having negatively sloped sidewalls, features having a re-entrant profile, and/or features having sidewall topography are described herein. Methods involve depositing a first amount of material, such as a dielectric (e.g., silicon oxide), into a feature and forming a sacrificial helmet on the field surface of the substrate, etching some of the first amount of the material to open the feature opening and/or smoothen sidewalls of the feature, and depositing a second amount of material to fill the feature. The sacrificial helmet may be the same as or different material from the first amount of material deposited into the feature.

Abstract: A method for processing a substrate to create an air gap includes a) providing a substrate including a first trench and a second trench; b) depositing a conformal layer on the substrate; c) performing sputtering to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench; and d) performing sputtering/deposition to seal first and second airgaps in the first trench and the second trench.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: Certain embodiments herein relate to methods of increasing a reaction chamber batch size. A portion of a batch of wafers is processed within the chamber. The processing results in at least some off-target deposition of material on interior surfaces of the reaction chamber. A mid-batch chamber processing is conducted to stabilize the off-target deposition materials accumulated on the chamber interior surfaces. Another portion of the batch of wafers is processed within the chamber. In various embodiments, processing of the chamber (e.g., mid-batch) and subsequent portion of the batch of wafers is repeated until processing of all wafers is complete. Batch size refers to the number of wafers that may be processed in the reaction chamber between chamber clean cycles. Chamber interior surfaces are seasoned prior to batch processing. Seasoning of the chamber interior surfaces involves applying a coating of the same material that may be used for deposition on the wafers during processing of the same.

Abstract: A pedestal assembly for a plasma processing system is provided. The assembly includes a pedestal with central top surface, e.g., mesa, and the central top surface extends from a center of the central top surface to an outer diameter of the central top surface. An annular surface surrounds the central top surface. The annular top surface is disposed at step down from the central top surface. A plurality of wafer supports project out of the central top surface at a support elevation distance above the central top surface. The plurality of wafer supports are evenly arranged around an inner radius of the center top surface. The inner radius is located between the center of the central top surface and less than a mid-radius that is approximately half way between the center of the pedestal and the outer diameter of the central top surface. A carrier ring configured for positioning over the annular surface of the pedestal is provided.

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.

Abstract: Methods and apparatuses for removing photoresist patterning scum from patterning mandrel structures without damaging other features or structures on a semiconductor substrate are desirable for patterning precision. Methods involve cleaning carbon-containing features on a semiconductor substrate by an atomic layer cleaning (ALC) process to descum the carbon-containing features without substantially modifying feature critical dimensions. The ALC process involves exposing the carbon-containing features to an oxidant or reductant in absence of a plasma, or other energetic activation, to modify scum on the surface of the carbon-containing features. The modified scum on the surface of the carbon-containing features is then exposed to an inert gas along with a plasma ignited at a pressure between 0.1 Torr and 10 Torr and a power of less than 200 W to remove the modified scum from the surface of the carbon-containing features.

Abstract: Methods and apparatuses for patterning carbon-containing material over a layer to be etched are provided herein. Methods involve trimming carbon-containing material by atomic layer etching including exposing the carbon-containing material to an oxygen-containing gas without a plasma to modify a surface of the carbon-containing material and exposing the carbon-containing material to an inert gas and igniting a plasma to remove the modified surface of the carbon-containing material. Methods may be used for multiple patterning techniques such as double and quad patterning. Methods also include depositing a conformal film over a carbon-containing material patterned using atomic layer etching without breaking vacuum. The oxygen-containing gas may be one containing any one or more of oxygen, ozone, water vapor, nitrous oxide, carbon monoxide, formic acid vapor and/or carbon dioxide.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.

Abstract: Methods and apparatuses for depositing low density spacers using atomic layer deposition for negative patterning schemes are provided herein. Methods involve one or more of: (1) exposing a substrate to a plasma for a duration less than about 300 ms in each cycle of alternating pulses of a deposition precursor and oxidizing plasma; (2) exposing the substrate to the plasma at a radio frequency power density of less than about 0.2 W/cm2; and (3) exposing the substrate to the plasma produced from a process gas having an argon to oxidant ratio of at least about 1:12.

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors to a silicon-containing film. Post-dose treatments include exposure to non-oxidizing gas, exposure to non-oxidizing plasma, and exposure to ultraviolet radiation.

Abstract: Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.

Abstract: A semiconductor system includes a chamber, a pedestal disposed in the chamber, and a focus ring that surrounds the pedestal. The pedestal has a center region for supporting a central region of a substrate, e.g., a wafer. The focus ring is configured to surround the center region of the pedestal. The focus ring has an annular support region that extends between an inner portion of the focus ring and an outer portion of the focus ring. The annular support region, which is disposed at an angle relative to a horizontal line, provides a knife-edge contact for the substrate when present over the center region of the pedestal and the annular support region of the focus ring. The knife-edge contact between the edge of the substrate and the annular support region of the focus ring disables chemical access to the substrate backside and thereby reduces unwanted backside deposition.

Abstract: Methods and apparatuses for patterning carbon-containing material over a layer to be etched are provided herein. Methods involve trimming carbon-containing material by atomic layer etching including exposing the carbon-containing material to an oxygen-containing gas without a plasma to modify a surface of the carbon-containing material and exposing the carbon-containing material to an inert gas and igniting a plasma to remove the modified surface of the carbon-containing material. Methods may be used for multiple patterning techniques such as double and quad patterning. Methods also include depositing a conformal film over a carbon-containing material patterned using atomic layer etching without breaking vacuum.

Abstract: A vapor delivery system includes an ampoule to store liquid precursor and a heater to partially vaporize the liquid precursor. A first valve communicates with a push gas source and the ampoule. A second valve supplies vaporized precursor to a heated injection manifold. A valve manifold includes a first node in fluid communication with an outlet of the heated injection manifold, a third valve having an inlet in fluid communication with the first node and an outlet in fluid communication with vacuum, a fourth valve having an inlet in fluid communication with the first node and an outlet in fluid communication with a second node, a fifth valve having an outlet in fluid communication with the second node, and a sixth valve having an outlet in fluid communication with the second node. A gas distribution device is in fluid communication with the second node.

Abstract: Methods and apparatuses for depositing low density spacers using atomic layer deposition for negative patterning schemes are provided herein. Methods involve one or more of: (1) exposing a substrate to a plasma for a duration less than about 300 ms in each cycle of alternating pulses of a deposition precursor and oxidizing plasma; (2) exposing the substrate to the plasma at a radio frequency power density of less than about 0.2 W/cm2; and (3) exposing the substrate to the plasma produced from a process gas having an argon to oxidant ratio of at least about 1:12.