Abstract: The subject disclosure relates to techniques for providing semiconductor chip security using piezoelectricity. According to an embodiment, an apparatus is provided that comprises an integrated circuit chip comprising a pass transistor that electrically connects two or more electrical components of the integrated circuit chip. The apparatus further comprises a piezoelectric element electrically connected to a gate electrode of the pass transistor; and a packaging component that is physically connected to the piezoelectric element and applies a mechanical force to the piezoelectric element, wherein the piezoelectric element generates and provides a voltage to the gate electrode as a result of the mechanical force, thereby causing the pass transistor to be in an on-state. In one implementation, the two or more electrical components comprise a circuit and a power source. In another implementation, the two or more electrical components comprise two circuits.

Abstract: Methods of using and making chemical sensors include exposing a functionalized electrode to a substance to be tested. The functionalized electrode is electrically connected to a sensor having a piezoelectric element and a piezoresistive element. A voltage on the functionalized electrode controls a resistance of the piezoresistive element. A current is measured passing through the piezoresistive element. The presence of the analyte is determined based on the measured current.

Abstract: Chemical sensors include a functionalized electrode configured to change surface potential in the presence of an analyte. A piezoelectric element is connected to the functionalized electrode. A piezoresistive element is in contact with the piezoelectric element.

Abstract: A semiconductor device includes a first dielectric layer formed on a second dielectric layer and planar contacts formed in the second dielectric layer. The planar contacts are spaced apart to form a gap therebetween. The first dielectric layer includes a thermally conductive dielectric layer and is formed on lateral sides of the planar contacts and in the gap. A resistive element is formed between the planar contacts over the gap and in contact with at least the thermally conductive dielectric layer in the gap.

Abstract: A dosimetry device includes a first chamber formed on a substrate with a first decomposable barrier sensitive to radiation and a first chemical component. A second chamber is formed on the substrate in proximity of the first chamber and includes a second decomposable barrier sensitive to radiation and a second chemical component. Upon a radiation event, decomposition of the first and second barriers of the first and second chambers permits a mixing of the first and second chemical components to cause a visible change of the dosimetry device.

Abstract: Chemical sensors and methods of using and making the same include a functionalized electrode configured to change surface potential in the presence of an analyte. A piezoelectric element is connected to the functionalized electrode and is configured to change in volume in accordance with the surface potential of the functionalized electrode. A piezoresistive element is in contact with the piezoelectric element and is configured to change in resistance in accordance with the volume of the piezoelectric element.

Abstract: Semiconductor devices include a thin channel region formed on a buried insulator. A source and drain region is formed on the buried insulator, separated from the channel region by notches. A gate structure is formed on the thin channel region.

Abstract: Chemical sensors and methods of forming and making the same include a semiconductor substrate having an input terminal and an output terminal. A negative capacitance structure is positioned on the semiconductor substrate and is configured to control a current passing from the input terminal to the output terminal. A functionalized electrode is in electrical contact with the negative capacitance structure and is configured to change surface potential in the presence of an analyte, such that a phase change in the negative capacitance structure is triggered when the surface potential exceeds a threshold.

Abstract: Chemical sensors and methods of using and making the same include a functionalized electrode configured to change surface potential in the presence of an analyte. A piezoelectric element is connected to the functionalized electrode and is configured to change in volume in accordance with the surface potential of the functionalized electrode. A piezoresistive element is in contact with the piezoelectric element and is configured to change in resistance in accordance with the volume of the piezoelectric element.

Abstract: A method of forming a semiconductor structure includes patterning one or more fin structures disposed over a top surface of a substrate, a given one of the fin structures comprising a first semiconductor layer comprising a first material disposed over the top surface of the substrate and a second semiconductor layer comprising a second material disposed over a top surface of the first semiconductor layer. The method further includes forming a liner over the one or more fin structures, and performing an anneal process to form one or more nanoscale features in a top surface of the second semiconductor layer. The second material exhibits enhanced diffusion, relative to the first material, at an interface of the liner and sidewalls of the given fin structure.

Abstract: A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.

Abstract: A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.

Abstract: A method is presented for forming a semiconductor device. The method may include forming a source contact on the semiconductor substrate, forming a drain contact on the semiconductor substrate, and forming a gate structure on the semiconductor substrate between the source and drain contacts, the gate structure including a piezoelectric material having at least one graphene layer.

Abstract: Resource sharing method and device are provided. The method includes: sending an access request to a second communication network through a target backhaul link of the second communication network by a resource sharing device when the access request is received from a terminal from a first communication network; sending the access request to the first communication network by the second communication network, for authenticating the terminal; sending QoS level information of the terminal to the second communication network by the first communication network when the terminal is authenticated, and sending access rejected information to the second communication network when the terminal is unauthenticated; providing services for the terminal according to the subscription QoS level information, or rejecting to provide services for the terminal according to the access rejected information.

Abstract: A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional multispectral imaging sensor includes a monolithic structure having a plurality of layers. Each of the layers is formed from light detecting materials for detecting light of respective different non-overlapping wavelengths and having respective different bandgaps.