Abstract: Disclosed is an integrated global shipment system that provides end-to-end visibility of the movement of a package. The integrated global shipment system employs a shipment consolidating application for integrating one or more freight tracking systems with one or more end-delivery systems. As a result, shippers are provided with complete visibility of the movement of their shipments of goods from an origin country to a destination country and till the final consignees. In addition, the integrated shipment system significantly decreases the cost of managing inventories by providing a virtual inventory solution. Under this virtual inventory solution, suppliers are able to bypass distribution centers and delay allocation of goods until after the importation of goods into a destination country.

Abstract: Disclosed is an integrated global shipment system that provides end-to-end visibility of the movement of a package. The integrated global shipment system employs a shipment consolidating application for integrating one or more freight tracking systems with one or more end-delivery systems. As a result, shippers are provided with complete visibility of the movement of their shipments of goods from an origin country to a destination country and till the final consignees. In addition, the integrated shipment system significantly decreases the cost of managing inventories by providing a virtual inventory solution. Under this virtual inventory solution, suppliers are able to bypass distribution centers and delay allocation of goods until after the importation of goods into a destination country.

Abstract: Disclosed is an integrated global shipment system that provides end-to-end visibility of the movement of a package. The integrated global shipment system employs a shipment consolidating application for integrating one or more freight tracking systems with one or more end-delivery systems. As a result, shippers are provided with complete visibility of the movement of their shipments of goods from an origin country to a destination country and till the final consignees. In addition, the integrated shipment system significantly decreases the cost of managing inventories by providing a virtual inventory solution. Under this virtual inventory solution, suppliers are able to bypass distribution centers and delay allocation of goods until after the importation of goods into a destination country.

Abstract: Disclosed is an integrated global shipment system that provides end-to-end visibility of the movement of a package. The integrated global shipment system employs a shipment consolidating application for integrating one or more freight tracking systems with one or more end-delivery systems. As a result, shippers are provided with complete visibility of the movement of their shipments of goods from an origin country to a destination country and till the final consignees. In addition, the integrated shipment system significantly decreases the cost of managing inventories by providing a virtual inventory solution. Under this virtual inventory solution, suppliers are able to bypass distribution centers and delay allocation of goods until after the importation of goods into a destination country.

Abstract: Disclosed is an integrated global shipment system that provides end-to-end visibility of the movement of a package. The integrated global shipment system employs a shipment consolidating application for integrating one or more freight tracking systems with one or more end-delivery systems. As a result, shippers are provided with complete visibility of the movement of their shipments of goods from an origin country to a destination country and till the final consignees. In addition, the integrated shipment system significantly decreases the cost of managing inventories by providing a virtual inventory solution. Under this virtual inventory solution, suppliers are able to bypass distribution centers and delay allocation of goods until after the importation of goods into a destination country.

Abstract: Disclosed is an integrated global shipment system that provides end-to-end visibility of the movement of a package. The integrated global shipment system employs a shipment consolidating application for integrating one or more freight tracking systems with one or more end-delivery systems. As a result, shippers are provided with complete visibility of the movement of their shipments of goods from an origin country to a destination country and till the final consignees. In addition, the integrated shipment system significantly decreases the cost of managing inventories by providing a virtual inventory solution. Under this virtual inventory solution, suppliers are able to bypass distribution centers and delay allocation of goods until after the importation of goods into a destination country.

Abstract: A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack.

Abstract: A method of selectively forming a spacer on a first class of transistors and devices formed by such methods. The method can include depositing a conformal first deposition layer on a substrate with different classes of transistors situated thereon, depositing a blocking layer to at least one class of transistors, dry etching the first deposition layer, removing the blocking layer, depositing a conformal second deposition layer on the substrate, dry etching the second deposition layer and wet etching the remaining first deposition layer. Devices may include transistors of a first class with larger spacers compared to spacers of transistors of a second class.

Abstract: A semiconductor device and method for its fabrication are described. An active region spacer may be formed on a top surface of an isolation region and adjacent to a sidewall of an active region. In one embodiment, the active region spacer may suppress the formation of metal pipes in the active region.

Abstract: A method of selectively forming a spacer on a first class of transistors and devices formed by such methods. The method can include depositing a conformal first deposition layer on a substrate with different classes of transistors situated thereon, depositing a blocking layer to at least one class of transistors, dry etching the first deposition layer, removing the blocking layer, depositing a conformal second deposition layer on the substrate, dry etching the second deposition layer and wet etching the remaining first deposition layer. Devices may include transistors of a first class with larger spacers compared to spacers of transistors of a second class.

Abstract: A method of selectively forming a spacer on a first class of transistors and devices formed by such methods. The method can include depositing a conformal first deposition layer on a substrate with different classes of transistors situated thereon, depositing a blocking layer to at least one class of transistors, dry etching the first deposition layer, removing the blocking layer, depositing a conformal second deposition layer on the substrate, dry etching the second deposition layer and wet etching the remaining first deposition layer. Devices may include transistors of a first class with larger spacers compared to spacers of transistors of a second class.

Abstract: The present invention relates to polynucleotides encoding human adenylylcyclase VI and uses thereof for enhancing cardiac function. The present invention can thus be used in the treatment of heart disease, especially congestive heart failure.

Abstract: A method including forming a transistor device having a channel region; implanting a first halo into the channel region; and implanting a second different halo into the channel region. An apparatus including a gate electrode formed on a substrate; a channel region formed in the substrate below the gate electrode and between contact points; a first halo implant comprising a first species in the channel region; and a second halo implant including a different second species in the channel region.

Abstract: The present invention is directed to a spacer for supporting stacked drawers. The spacer includes a U-shaped body portion and a post extending therefrom. The body portion defines an elongated slot for receiving a rail of the lowermost drawer. The post supports the uppermost drawer. The spacer may further include a generally vertical wall portion.

Abstract: A method for processing dual threshold nMOSFETs and pMOSFETs requiring only one additional masking and implantation operation over single threshold MOSFETs is disclosed. The additional mask and implant operation both enhances the threshold voltage doping of one type of FET and compensates the threshold voltage doping of another type of FET. Where a first threshold voltage implant sets the threshold voltage for an NMOS device to a low threshold voltage, and a second threshold voltage implant sets the threshold voltage for a PMOS device to a high threshold voltage, a third implant may both enhance a NMOS device threshold implant to set the threshold voltage high while compensating a PMOS device threshold implant to set the threshold voltage low.

Abstract: The present invention is directed to a method of forming a container comprising forming a basket portion of metal mesh material and a rail connected to the basket portion. The rail extends substantially outwardly from the outer surface of the basket portion and the rail extends continuously around the outer surface of the basket portion. In one example, the method includes forming the rail so that it does not contain or surround a free edge of the basket portion. In another example, the method includes forming the rail so that it includes an opening for containing or surrounding a free edge of the basket portion. The method may also include forming a lower rail. The present invention is also directed to a container formed by such method.

Abstract: A method of forming an MOS integrated circuit having at least two types of NFET, each type having a different threshold voltage, and at least two types of PFET, each type having a different threshold voltage, includes forming at least four active regions in a substrate, each region having a different doping profile. A conventional two threshold voltage CMOS process is modified to produce four transistor threshold voltages with only one additional masked implant operation. This additional implant raises the threshold voltage of one type of MOSFET while lowering that of the other MOSFET type.

Abstract: The present invention relates to methods and compositions for enhancing cardiac function in mammalian hearts by inserting transgenes that increase beta-adrenergic responsiveness within the myocardium. The present invention can thus be used in the treatment of heart disease, especially congestive heart failure.

Abstract: An apparatus including a MOSFET circuit having dual threshold voltage NMOS and PMOS transistors wherein the threshold voltage of a low threshold NMOS transistor is set with a first halo implant, a threshold voltage of a high threshold voltage PMOS transistor is set with a second halo implant, and, a threshold voltage of a high threshold voltage NMOS transistor is enhanced while, a threshold voltage of a low threshold voltage PMOS transistor is compensated with a third halo implant.

Abstract: A method including forming a transistor device having a channel region; implanting a first halo into the channel region; and implanting a second different halo into the channel region. An apparatus including a gate electrode formed on a substrate; a channel region formed in the substrate below the gate electrode and between contact points; a first halo implant comprising a first species in the channel region; and a second halo implant including a different second species in the channel region.