Abstract: A mixture contains at least one polyether block amide (PEBA) and at least one poly(meth)acrylate, selected from poly(meth)acrylimides, poly-alkyl(meth)acrylates, and mixtures thereof. The mass ratio of PEBA to poly(meth)acrylate is 95:5 to 60:40. The polyalkyl(meth)acrylate contains 80% by weight to 99% by weight of methyl methacrylate (MMA) units and 1% by weight to 20% by weight of C1-C10-alkyl acrylate units, based on the total weight of polyalkyl(meth)acrylate. The mixture can be processed to give foamed mouldings. The mouldings can be used in footwear soles, stud material, insulation or insulating material, damping components, lightweight components, or in a sandwich structure.

Abstract: Polymer compositions are made based on imidated polyalkyl (meth)acrylate, especially imidated polymethyl methacrylate. The polymer composition includes a polymer matrix A and at least one tribological additive B, especially selected from organic or inorganic solid hardening particles. The polymer compositions and formed articles made thereof exhibit low friction coefficients and high wear resistance even at elevated temperatures. They can advantageously be used in tribological application, in replacement of high-performance materials, such as polyether ether ketone (PEEK).

Abstract: Disclosed are embodiments of a semiconductor device and method of forming the device. The device includes a gate with first and second sections on a semiconductor layer. The first section includes first gate dielectric and gate conductor layers and an optional additional gate conductor layer on the first gate conductor layer. The second section includes second gate dielectric and gate conductor layers on the semiconductor layer and further extending onto the top of the first gate conductor layer. The second gate dielectric layer is thinner than the first gate dielectric layer. A gate sidewall spacer is on the first gate conductor layer positioned laterally to a sidewall of the second section (e.g., between the sidewall and the optional additional gate conductor layer). The first and second sections are either electrically connected for biasing with the gate bias voltage or electrically isolated for biasing with different gate bias voltages.

Abstract: The disclosure provides a structure with a buried doped region for coupling a source line contact to the gate structure of a memory cell. A structure according to the disclosure includes a memory cell having a gate structure extending in a first lateral direction over a substrate. A buried doped region is within the substrate and extends in a second lateral direction from below the gate structure to a portion of the substrate laterally distal to the gate structure. A source line contact is on the portion of the substrate laterally distal to the gate structure. The buried doped region couples the source line contact to the gate structure of the memory cell through a lower surface of the gate structure.

Abstract: A park lock mechanism for a motor vehicle includes a park lock pawl for selectively forming a form-locking connection to a lock region, the park lock mechanism having a locking mode, in which the park lock pawl is moved into a locking position, and a driving mode, in which the park lock pawl is moved into a driving position. The park lock pawl is pivotable about a pawl axis from the locking position into the driving position. A locking pawl spring device preloads the park lock pawl into the driving position. A locking pawl actuation device has a locking pawl actuator with a locking pawl actuator shaft and has a locking pawl cone, the locking pawl cone being movable along a cone axis by the locking pawl actuator. The cone axis is parallel to the pawl axis. The locking pawl cone is movable along the cone axis between a cone driving position and a cone locking position.

Abstract: A computer implemented method for a multi-layer integrated circuit routing tool connecting sources with nets to sinks in a hierarchical multi-layer integrated circuit design environment, the method including creating a cycle reach table containing a first set of information parameters for two dimensional nets per metal layer combination, creating a repeater reach table containing a second set of information parameters per constraint class, preparing a working list of nets, preparing a list of blocks larger than repeater reach dimensions, connecting a source pin to a sink pin on preassigned metal layers, by routing the net based on the given constraint class.

Abstract: A park lock mechanism for a motor vehicle includes a park lock pawl for selectively forming a form-locking connection to a lock region, the park lock mechanism having a locking mode, in which the park lock pawl is moved into a locking position, and a driving mode, in which the park lock pawl is moved into a driving position. The park lock pawl is pivotable about a pawl axis from the locking position into the driving position. A locking pawl spring device preloads the park lock pawl into the driving position. A locking pawl actuation device has a locking pawl actuator with a locking pawl actuator shaft and has a locking pawl cone, the locking pawl cone being movable along a cone axis by the locking pawl actuator. The cone axis is parallel to the pawl axis. The locking pawl cone is movable along the cone axis between a cone driving position and a cone locking position.

Abstract: A nonvolatile memory device is provided, the device comprising a ferroelectric memory capacitor arranged over a first active region contact of a first transistor and a gate contact of a second transistor, whereby the ferroelectric memory capacitor at least partially overlaps a gate of the first transistor.

Abstract: A process can be used for manufacturing a coloured moulding composition with an improved optical appearance and a particularly high thermal stability. The process involves providing a thermoplastic polymer and adding a colouring preparation, or a liquid composition or a master batch containing the colouring preparation. Injection moulded parts and extruded parts can be composed of the coloured moulding composition.

Abstract: A non-volatile memory (NVM) structure includes a first memory device including: a first inter-poly dielectric defined by an isolation layer over a first semiconductor layer over an insulator layer (SOI) stack over a bulk semiconductor substrate, a first tunneling insulator defined by the insulator layer, a first floating gate defined by the semiconductor layer of the SOI stack, and a first channel region defined in the bulk semiconductor substrate between a source region and a drain region. The memory device may also include a control gate over the SOI stack, an erase gate over a source region in the bulk substrate, and a bitline contact coupled to a drain region in the bulk substrate. The NVM structure may also include another memory device similar to the first memory device and sharing the source region.

Abstract: A nonvolatile memory device is provided, the device comprising a ferroelectric memory capacitor arranged over a first active region contact of a first transistor and a gate contact of a second transistor, whereby the ferroelectric memory capacitor at least partially overlaps a gate of the first transistor.

Abstract: A mixture contains at least one polyether block amide (PEBA) and at least one poly(meth)acrylate, selected from poly(meth)acrylimides, poly-alkyl(meth)acrylates, and mixtures thereof. The mass ratio of PEBA to poly(meth)acrylate is 95:5 to 60:40. The polyalkyl(meth)acrylate contains 80% by weight to 99% by weight of methyl methacrylate (MMA) units and 1% by weight to 20% by weight of C1-C10-alkyl acrylate units, based on the total weight of polyalkyl(meth)acrylate. The mixture can be processed to give foamed mouldings. The mouldings can he used in footwear soles, stud material, insulation or insulating material, damping components, lightweight components, or in a sandwich structure.

Abstract: A screw spindle pump, including a housing and a drive spindle accommodated therein and at least one running spindle which meshes with the latter and which has in each case two terminal end surfaces. A stop surface is provided axially adjacent to at least one end surface of the running spindle, wherein the running spindle is accommodated displaceably with an axial clearance perpendicular to the stop surfaces.

Abstract: Formed articles, such as medical devices, can be made of an acrylic-based polymer material, which contains at least one polyalkyl(meth)acrylate. A method can be used for the UV disinfection and/or sterilization of the formed articles, including disinfection and/or sterilization of the inner surface of the formed article. The method for UV sterilization involves exposure of the outer surface of the formed article with UV radiation at a wavelength in the range of 260 nm to 300 nm, wherein the acrylic-based polymer material has a transmittance of at least 10%, averaged over the wavelength range from 260 nm to 300 nm, measured in accordance with ISO 13468-2 at a thickness of 3 mm.

Abstract: A non-volatile memory (NVM) structure includes a first memory device including: a first inter-poly dielectric defined by an isolation layer over a first semiconductor layer over an insulator layer (SOI) stack over a bulk semiconductor substrate, a first tunneling insulator defined by the insulator layer, a first floating gate defined by the semiconductor layer of the SOI stack, and a first channel region defined in the bulk semiconductor substrate between a source region and a drain region. The memory device may also include a control gate over the SOI stack, an erase gate over a source region in the bulk substrate, and a bitline contact coupled to a drain region in the bulk substrate. The NVM structure may also include another memory device similar to the first memory device and sharing the source region.

Abstract: A screw spindle pump, including a housing and a drive spindle accommodated therein and at least one running spindle which meshes with the latter and which has in each case two terminal end surfaces. A stop surface is provided axially adjacent to at least one end surface of the running spindle, wherein the running spindle is accommodated displaceably with an axial clearance perpendicular to the stop surfaces.

Abstract: A semiconductor circuit design method, system and computer program product for placing a unit pin on a boundary of a unit of a semiconductor circuit to be designed may be provided. Pin position data is received, wherein the pin position data comprises a chip pin position of a chip pin within the chip area and outside of the unit of a semiconductor circuit, to which the unit pin is to be electrically connected. The coordinates of a center point of the unit are determined, as well as a line crossing the center point and the chip pin position. The unit pin is placed on an intersection of the boundary of the unit and the line crossing the center point.

Abstract: A screw spindle pump, comprising a pump housing having a lead screw received therein and at least one running spindle which meshes with said lead screw, as well as a connector housing which is placed onto the pump housing and has a suction connector and a pressure connector, the two latter fluidically communicating with a suction inlet and a pressure outlet of the pump housing, wherein the connector housing is composed of a first housing part and a second housing part, one of the two latter having the suction connector and the other having the pressure connector, both said housing parts being rotatable relative to the pump housing and both being rotatable relative to one another.

Abstract: Light scattering polymeric compositions have improved scattering efficiency and improved mechanical properties. The compositions include a polymeric matrix material and at least two different kinds of scattering particles uniformly dispersed therein.

Abstract: A semiconductor circuit design method, system and computer program product for placing a unit pin on a boundary of a unit of a semiconductor circuit to be designed may be provided. Pin position data is received, wherein the pin position data comprises a chip pin position of a chip pin within the chip area and outside of the unit of a semiconductor circuit, to which the unit pin is to be electrically connected. The coordinates of a center point of the unit are determined, as well as a line crossing the center point and the chip pin position. The unit pin is placed on an intersection of the boundary of the unit and the line crossing the center point.