Abstract: A time multiplex logic device is disclosed. The device comprises a single wire segment to couple a plurality of logic outputs to a plurality of logic inputs using a non-overlapping time multiplex sequence of global controls signals. The disclosure includes programmable logic blocks and wire structures that allow wire sharing. Time shared wires offer significant reduction in total wires needed for routing in programmable logic, which accounts for the single largest overhead and cost associated with programmable logic.

Abstract: A three-dimensional semiconductor device, comprising: a first module layer having a plurality of circuit blocks; and a second module layer positioned substantially above the first module layer, including a plurality of configuration circuits; and a third module layer positioned substantially above the second module layer, including a plurality of circuit blocks; wherein, the configuration circuits in the second module control a portion of the circuit blocks in the first and third module layers.

Abstract: A semiconductor device, wherein: a first fabricating option provides a plurality of user configurations to configure the device functionality; and a second fabricating option hard-wires a said functional configuration, the second option comprising a plurality of common masks and fewer processing steps compared to the first option.

Abstract: A time multiplexed programmable switch of a semiconductor device comprising: a first node; and a plurality of second nodes, each of the second nodes having a path to couple to the first node, the path comprising: a first configurable device configured to select or deselect the path; and a second configurable device in series with the first configurable device configured to select or deselect the path by a digital signal; wherein, the plurality of digital signals are time multiplexed to have no more than one second device in the select state within a time interval.

Abstract: Methods of fabricating low temperature semiconductor thin film switching devices are described.

Abstract: An integrated circuit fabricated by a mask set including a mask to generate a metal pattern defined by CAD software, the metal pattern generation method including: reading a binary data set, the data points in the set uniquely matched to a plurality of fixed metal tabs; and selecting a metal tab from a first set of selectable metal tabs for a first data value, or a second set of selectable metal tabs for a second data value for each of the fixed metal tabs; wherein a first set metal tab and a second set metal tab couples each said fixed metal tab to first and second voltages respectively.

Abstract: A programmable interconnect structure for an integrated circuit comprises: a pass-gate fabricated on a substrate layer to electrically connect a first node to a second node; and a configuration circuit including at least one memory element to control said pass-gate fabricated substantially above said substrate layer; and a programmable method to select between isolating said first and second nodes and connecting said first and second nodes. A programmable buffer structure for an integrated circuit comprises: a first and a second terminal; and a programmable pull-up and a programmable pull-down circuit coupled between said first and second terminals; and a configuration circuit including at least one memory element coupled to said pull-up and pull-down circuits; and a programmable method to select between isolating said first terminal from second terminal by deactivating said pull-up and pull-down circuits, and coupling said first terminal to second terminal by activating said pull-up and pull-down circuits.

Abstract: A smaller mask programmable gate array (MPGA) device derived from a larger field programmable gate array (FPGA), comprising: a layout of transistors and a plurality of interconnect layers substantially identical to a smaller region of the FPGA; and input/output pads matching a subset of the input/output pads of the FPGA; wherein, a design that is mapped to said smaller region of the FPGA device using said subset of input/output pads by a user programmable means can be identically mapped to the MPGA by a hard-wire circuit. Such a gate array further comprises a mask programmable metal-circuit in lieu of a user programmable configuration circuit of the FPGA; and a logic block to input/output pad connection in lieu of a logic block to a register at the boundary of said smaller region to an input/output pad connection of the FPGA.

Abstract: A programmable integrated circuit (IC), comprising: a programmable logic circuit configured by a first control signal coupled to a gate electrode of a transistor in the logic circuit; and a first plurality of read only memory (ROM) elements capable of coupling to the first control signal, wherein a said first ROM elements is selected to couple by one or more decode signals, and wherein the first ROM elements store a plurality of user specifications.

Abstract: In a first aspect, a semiconductor storage device, comprising: a metal line coupled to a gate of an access transistor, wherein the gate material is deposited substantially above the metal line. In a second aspect, a semiconductor storage device, comprising: a first port to write data to a storage element; and a second port to read a signal generated by the storage element; and a first metal line coupled to a gate of an access transistor coupled to the first port; and a second metal line coupled to a gate of an access transistor coupled to the second port; wherein, the gates of said access transistors are formed on a gate material deposited substantially above the metal of first and second metal lines.

Abstract: A method of converting designs from a field programmable gate array (FPGA) to a mask programmable gate array (MPGA), comprising: an FPGA comprising a programmable logic block array, and a plurality of programmable interconnect wires, and a bit-stream of memory data to program the FPGA; and an MPGA comprising identical layouts of the programmable logic block array and the plurality of programmable interconnect wires, wherein the bit-stream data is converted to a custom metal pattern to mask program the MPGA.

Abstract: A time multiplexed programmable switch of a semiconductor device comprising: a first node; and a plurality of second nodes, each of the second nodes having a path to couple to the first node, the path comprising: a first configurable device configured to select or deselect the path; and a second configurable device in series with the first configurable device configured to select or deselect the path by a digital signal; wherein, the plurality of digital signals are time multiplexed to have no more than one second device in the select state within a time interval.

Abstract: A three dimensional semiconductor device, comprising: a substrate including a plurality of circuits; a plurality of pads, each pad coupled to a said circuit; and a memory array positioned above or below the substrate coupled to a said circuit to program the memory array.

Abstract: A programmable semiconductor device includes a user programmable switch comprising a configurable element is positioned above a transistor material layer deposited on a substrate layer.

Abstract: A three-dimensional semiconductor device, comprising: a programmable logic circuit; and a configuration circuit comprising a non planar memory element, wherein: a portion of the memory element is positioned above or below the logic circuit; and an output of the memory element is coupled to the logic circuit to program the logic circuit.

Abstract: In a first aspect, a three dimensional programmable logic device (PLD) comprises a plurality of distributed programmable elements located in a substrate region; and a contiguous array of configuration memory cells, a plurality of said memory cells coupled to the plurality of programmable elements to configure the programmable elements, wherein: the memory array is positioned substantially above or below the substrate region; and the memory array and the substrate region layout geometries are substantially similar. In a second aspect, the 3D PLD comprises a contiguous array of metal cells, each metal cell having the configuration memory cell dimensions and a metal stub coupled to a said configuration memory cell and to one or more of said programmable elements.

Abstract: A three dimensional semiconductor device, comprising: a plurality of circuit blocks including programmable logic blocks having predetermined positions within the device; a plurality of pads having predetermined positions within the device; and a configuration memory circuit coupled to the programmable logic blocks having a plurality of fabricating methods without altering the predetermined positions of the pads and the circuit blocks.

Abstract: A programmable interconnect structure for an integrated circuit comprises: a pass-gate fabricated on a substrate layer to electrically connect a first node to a second node; and a configuration circuit including at least one memory element to control said pass-gate fabricated substantially above said substrate layer; and a programmable method to select between isolating said first and second nodes and connecting said first and second nodes. A programmable buffer structure for an integrated circuit comprises: a first and a second terminal; and a programmable pull-up and a programmable pull-down circuit coupled between said first and second terminals; and a configuration circuit including at least one memory element coupled to said pull-up and pull-down circuits; and a programmable method to select between isolating said first terminal from second terminal by deactivating said pull-up and pull-down circuits, and coupling said first terminal to second terminal by activating said pull-up and pull-down circuits.

Abstract: A programmable integrated circuit (IC), comprising: a programmable logic circuit configured by a first control signal coupled to a gate electrode of a transistor in the logic circuit; and a first plurality of read only memory (ROM) elements capable of coupling to the first control signal, wherein a said first ROM elements is selected to couple by one or more decode signals, and wherein the first ROM elements store a plurality of user specifications.

Abstract: A semiconductor storage device, comprising: a first port to write data to a storage element; and a second port to read a signal generated by the storage element, wherein reading the generated signal protects data stored at the storage element from a read condition disturbance.