Patents by Inventor Raymond G. Beausoleil

Raymond G. Beausoleil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240295695
    Abstract: One aspect can provide a method for fabricating a photonic integrated circuit (PIC) with an embedded optical power monitor. The method can include creating a photomask based on a design of the PIC, the photomask comprising a pattern defining an optical waveguide for embedding the optical power monitor. Creating the photomask can include introducing a predetermined level of roughness along at least one edge of the pattern defining the optical waveguide. The method can further include fabricating the PIC, which can include using the photomask to create the optical waveguide with the introduced roughness on a sidewall corresponding to the edge of the pattern, thereby allowing light absorbed by the roughness to create free carriers for detection by the optical power monitor.
    Type: Application
    Filed: March 2, 2023
    Publication date: September 5, 2024
    Inventors: Geza Kurczveil, Raymond G. Beausoleil
  • Publication number: 20240289600
    Abstract: Systems and methods are provided for general matrix multiplication using wavelength parallel processing of a photonic tensor core. Examples of the systems and methods disclosed herein include encoding a second matrix into a plurality of optical signals based on a plurality of free spectral ranges (FSRs) of an array of resonator structures, the resonator structures having resonances tuned based on a first matrix. The optical signals can be input into input waveguides optically coupled to the array of resonator structures. A third matrix, representative of the first matrix multiplied by the second matrix, can be generated based on optical power output from the array of resonator structures.
    Type: Application
    Filed: February 28, 2023
    Publication date: August 29, 2024
    Inventors: XIAN XIAO, Stanley Cheung, Sean Hooten, Geza Kurczveil, Raymond G. Beausoleil
  • Publication number: 20240204881
    Abstract: Systems, devices, and methods are provided for built-in redundancy in optical devices that output an optical signal, for example, to photonic integrated circuits. The device and systems disclosed herein include a plurality of optical sources coupled to a plurality of waveguides. Each adjacent pair of the plurality of waveguides are coupled to an optical switching devices that comprises an interferometer having a first branch comprising a phase-shift mechanism coupled to one waveguide of the pair of waveguides. A voltage bias can be applied to the phase-shift mechanisms to tune a respective phase difference and direct an optical signal from any of the plurality of optical sources to the output end of the optical device. According to various examples disclosed herein, the phase-shift mechanisms comprises metal oxide semiconductor (MOS) capacitors.
    Type: Application
    Filed: December 14, 2022
    Publication date: June 20, 2024
    Inventors: Stanley CHEUNG, Geza KURCZVEIL, Yiwei PENG, Yuan YUAN, Raymond G. BEAUSOLEIL
  • Patent number: 12013568
    Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.
    Type: Grant
    Filed: March 15, 2022
    Date of Patent: June 18, 2024
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Stanley Cheung, Yuan Yuan, Di Liang, Raymond G. Beausoleil
  • Publication number: 20240184182
    Abstract: An example optical device, such as a Mach-Zehnder interferometer (MZI) is presented. The MZI includes a plurality of optical waveguide arms. At least one of the plurality of optical waveguide arms comprises a control gate, an optical waveguide, and a floating gate positioned between the control gate and the optical waveguide and electrically isolated from the optical waveguide and the control gate. The control gate receives a control voltage. The application of the control voltage to the control gate causes charges to accumulate in the floating gate resulting in a non-volatile change in an operating wavelength of the MZI.
    Type: Application
    Filed: December 6, 2022
    Publication date: June 6, 2024
    Inventors: Stanley Cheung, Yuan Yuan, Yiwei Peng, Zhuoran Fang, Bassem Tossoun, Geza Kurczveil, Raymond G. Beausoleil
  • Patent number: 11953766
    Abstract: Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.
    Type: Grant
    Filed: June 17, 2022
    Date of Patent: April 9, 2024
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Stanley Cheung, Geza Kurczveil, Yuan Yuan, Xian Xiao, Raymond G. Beausoleil
  • Publication number: 20240113490
    Abstract: Examples described herein relate to an optical device. The optical device includes a first microring resonator (MRR) laser having a first resonant frequency and a first free spectral range (FSR). The first FSR is greater than a channel spacing of the optical device. Further, the optical device includes a first frequency-dependent filter formed along a portion of the first MRR laser via a common bus waveguide to attenuate one or more frequencies different from the first resonant frequency. A length of the common bus waveguide is chosen to achieve a second FSR of the common bus waveguide to be substantially equal to the channel spacing to enable a single-mode operation for the optical device. Moreover, the optical device includes a first reflector formed at a first end of the common bus waveguide to enhance a unidirectionality of optical signal within the first MRR laser.
    Type: Application
    Filed: September 30, 2022
    Publication date: April 4, 2024
    Inventors: Stanley Cheung, Wayne Victor Sorin, Yuan Yuan, Raymond G. Beausoleil, Di Liang
  • Publication number: 20240039244
    Abstract: Implementations disclosed herein provide semiconductor resonator based optical multiplexers that achieve enhanced bandwidth range of light emitted therefrom. The present disclosure integrates silicon devices into resonator structures, such as micro-ring resonators, that couples a side mode with a lasing mode and resonantly amplifies coupled light to output light having an enhanced bandwidth with respect to the lasing mode. In some examples, the optical multiplexers disclosed herein include a bus waveguide; a first resonator structure optically coupled to the bus waveguide and comprising an optical amplification mechanism that generates light and a single mode filter to force the generated light into single-mode operation; and a second resonator structure optically coupled to the first resonator structure and comprising a phase-tuning mechanism. The phase-tuning mechanism can be controlled to detune phase of light in the second resonator relative to the light in the first resonator.
    Type: Application
    Filed: July 27, 2022
    Publication date: February 1, 2024
    Inventors: STANLEY CHEUNG, DI LIANG, RAYMOND G. BEAUSOLEIL, MICHAEL RENNE TY TAN, WAYNE VICTOR SORIN
  • Publication number: 20230408852
    Abstract: Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.
    Type: Application
    Filed: June 17, 2022
    Publication date: December 21, 2023
    Inventors: Stanley Cheung, Geza Kurczveil, Yuan Yuan, Xian Xiao, Raymond G. Beausoleil
  • Publication number: 20230296831
    Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.
    Type: Application
    Filed: March 15, 2022
    Publication date: September 21, 2023
    Inventors: Stanley Cheung, Yuan Yuan, Di Liang, Raymond G. Beausoleil
  • Publication number: 20230133722
    Abstract: Systems and methods are provided for creating and sharing knowledge among design houses. In particular, examples of the presently disclosed technology leverage the concepts of meta-optimizing and collaborative learning to reduce the computational burden shouldered by individual design houses using inverse design techniques to find optimal designs in a manner which protects intellectual property sensitive information. Examples may share versions of a central meta-optimizer (i.e. local meta-optimizers) among design houses targeting different (but related) design tasks. A local meta-optimizer can be trained to indirectly optimize a design task by computing hyper-parameters for a design house's private optimization function. The private optimization function may be using inverse design techniques to find an optimal design for a design task. This may correspond to finding a global minimum of a cost function using gradient descent techniques or more advanced global optimization techniques.
    Type: Application
    Filed: October 29, 2021
    Publication date: May 4, 2023
    Inventors: THOMAS VAN VAERENBERGH, PENG SUN, MARTIN FOLTIN, RAYMOND G. BEAUSOLEIL
  • Patent number: 11579677
    Abstract: In one example, a device to process analog sensor data is described. For example, a device may include at least one analog sensor to generate a first set of analog voltage signals and a crossbar array including a plurality of memristors. In one example, the crossbar array is to receive an input vector of the first set of analog voltage signals, generate an output vector comprising a second set of analog voltage signals that is based upon a dot product of the input vector and a matrix comprising resistance values of the plurality of memristors, detect a pattern of the output vector, and activate a processor upon a detection of the pattern.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: February 14, 2023
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Miao Hu, Tsung-Ching Huang, Chin-Hui Chen, Raymond G Beausoleil, John Paul Strachan
  • Patent number: 11581704
    Abstract: Narrow-optical linewidth laser generation devices and methods for generating a narrow-optical linewidth laser beam are provided. One narrow-optical linewidth laser generation devie includes a single-wavelength mirror or multiwavelength mirror (for comb lasers) formed from one or more optical ring resonators coupled with an optical splitter. The optical splitter may in turn be coupled with a quantum dot optical amplifier (QDOA), itself coupled with a phase-tuner. The phase tuner may be further coupled with a broadband mirror. The narrow-optical linewidth laser beam is generated by using a long laser cavity and additionally by using an integrated optical feedback.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: February 14, 2023
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Geza Kurczveil, Di Liang, Jared Hulme, Antoine Deseos, Raymond G. Beausoleil
  • Patent number: 11557877
    Abstract: Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: January 17, 2023
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Geza Kurczveil, Di Liang, Raymond G. Beausoleil
  • Patent number: 11539440
    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.
    Type: Grant
    Filed: July 16, 2020
    Date of Patent: December 27, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Geza Kurczveil, Di Liang, Sudharsanan Srinivasan, Raymond G. Beausoleil
  • Patent number: 11487181
    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: November 1, 2022
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Sudharsanan Srinivasan, Di Liang, Geza Kurczveil, Raymond G. Beausoleil
  • Publication number: 20220021459
    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source and a second optical source coupled to the first optical source and injection seeded by the first optical source. The optical transmitter further includes an output coupler, the second optical source coupled to the optical coupler via an output waveguide and configured to emit light having multiple different wavelengths through the output waveguide. In some implementations, the second optical source is self-injection seeded.
    Type: Application
    Filed: July 16, 2020
    Publication date: January 20, 2022
    Inventors: Geza Kurczveil, Di Liang, Sudharsanan Srinivasan, Raymond G. Beausoleil
  • Publication number: 20210405499
    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source coupled to an input waveguide and configured to emit light having different wavelengths through the input waveguide. The optical transmitter includes a Mach-Zehnder interferometer that includes a first arm and a second arm. The MZI further includes a first optical coupler configured to couple the emitted light from the input waveguide to the first and second arms and an array of two or more second optical sources coupled to the first arm. Each of the two or more second optical sources are configured to be injection locked to a different respective wavelength of the emitted light transmitted from the first optical source. The MZI further includes a second optical coupler configured to combine the emitted light from the first and second arms after propagating therethrough.
    Type: Application
    Filed: June 30, 2020
    Publication date: December 30, 2021
    Inventors: Sudharsanan Srinivasan, Di Liang, Geza Kurczveil, Raymond G. Beausoleil
  • Patent number: 11201449
    Abstract: Processes and apparatuses described herein provide for an efficient cyclical fiber-optic connection between a source component and multiple destination components in a computing environment. A comb laser generates a laser signal that includes laser light of a first frequency that is red-shifted from a carrier frequency. The comb laser concurrently transmits the laser signal to four ring resonators via an optical waveguide. Three of the ring resonators are initially configured for optical resonance at a second frequency that is blue-shifted from the carrier frequency, while one of the ring resonators is initially configured for optical resonance at the first frequency. The laser signal is modulated to communicate data to a first target location associated with the ring resonator that is initially configured for optical resonance at the first frequency.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: December 14, 2021
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Terrel Morris, Di Liang, Raymond G. Beausoleil, Ashkan Seyedi
  • Patent number: 11177631
    Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: November 16, 2021
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Geza Kurczveil, Di Liang, Raymond G. Beausoleil