Abstract: An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.

Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.

Abstract: Processes and apparatuses described herein provide for an efficient cyclical fiber-optic connection between a source component and multiple destination components in a computing environment. A comb laser generates a laser signal that includes laser light of a first frequency that is red-shifted from a carrier frequency. The comb laser concurrently transmits the laser signal to four ring resonators via an optical waveguide. Three of the ring resonators are initially configured for optical resonance at a second frequency that is blue-shifted from the carrier frequency, while one of the ring resonators is initially configured for optical resonance at the first frequency. The laser signal is modulated to communicate data to a first target location associated with the ring resonator that is initially configured for optical resonance at the first frequency.

Abstract: Techniques and circuitry for a semiconductor laser with enhanced lasing wavelengths stabilization are described. A semiconductor laser can generate an optical signal (e.g., single or multi-wavelength), for use in a Dense Wavelength Division Multiplexing (DWDM) interconnect system. The stabilization circuitry can include temperature sensor circuitry that measures an operational temperature of the semiconductor laser, and a feedback controller that can determine a temperature-induced wavelength shift that may be experienced by the multi-wavelength optical signal based on the laser's temperature. The feedback controller is also configured to generate a compensation signal that is determined to cause a complimentary shift in the multi-wavelength optical signal, where the complimentary shift can compensate for the temperature-induced wavelength shift.

Abstract: Examples herein relate to single-etch layer grating couplers. In particular, implementations herein relate to single-etch layer grating couplers comprising a planar waveguide wherein a first grating section and a second grating section are etched into. The first grating section is configured to scatter light at a given wavelength at a first angle relative to vertical and the second grating section is configured to scatter light at the given wavelength at a second angle relative to vertical. The stagger-tuning of the first grating section and the second grating section results in the light at the given wavelength being scattered at a desired angle the same or near an angle at which an optical fiber is offset from vertical.

Abstract: A Dense Wavelength Division Multiplexing (DWDM) photonic integration circuit (PIC) that implements a DWDM system, such as a transceiver, is described. The DWDM PIC architecture includes photonic devices fully integrating on a single manufacturing platform. The DWDM PIC has a multi-wavelength optical laser, a quantum dot (QD) laser with integrated heterogeneous metal oxide semiconductor (H-MOS) capacitor, integrated on-chip. The multi-wavelength optical laser can be a symmetric comb laser that generates two equal outputs of multi-wavelength light. Alternatively, the DWDM PIC can be designed to interface with a stand-alone multi-wavelength optical laser that is off-chip. In some implementations, the DWDM PIC integrates multiple optimally designed photonic devices, such as a silicon geranium (SiGe) avalanche photodetector (APD), an athermal H-MOS wavelength splitter, a QD photodetector, and a heterogenous grating coupler.

Abstract: Narrow-optical linewidth laser generation devices and methods for generating a narrow-optical linewidth laser beam are provided. One narrow-optical linewidth laser generation devie includes a single-wavelength mirror or multiwavelength mirror (for comb lasers) formed from one or more optical ring resonators coupled with an optical splitter. The optical splitter may in turn be coupled with a quantum dot optical amplifier (QDOA), itself coupled with a phase-tuner. The phase tuner may be further coupled with a broadband mirror. The narrow-optical linewidth laser beam is generated by using a long laser cavity and additionally by using an integrated optical feedback.

Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including a bidirectional optical link such as an optical fiber. The optical system includes first and second optical modules coupled to opposing ends of the optical fiber. The first optical module is configured to transmit optical signals across the optical fiber in a first direction and the second optical module is configured to transmit optical signals across the optical fiber in a second direction opposite the first direction. Each of the first and second optical modules includes a multi-wavelength optical source configured to emit light. Respective channel spacing of the multi-wavelength optical sources of the first and second optical modules are offset from each other such that the respective wavelengths of the emitted light transmitted across the optical fiber from the first and second optical sources do not overlap.

Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

Abstract: Examples described herein relate to reducing a magnitude of a supply voltage for a circuit element of an optical transmitter device. In some such examples, the circuit element is a driving element that is to receive a first electrical data signal and to provide a second electrical data signal to an optical element that is to provide an optical data signal. A testing element is to compare the optical data signal to the first electrical data signal to determine whether the optical transmitter device meets a performance threshold. When the device meets the performance threshold, a regulating element is to reduce a magnitude of the supply voltage of the driving element.

Abstract: A photonic integrated circuit package includes two arrays or sets of integrated comb laser modules that are bonded to a silicon interposer. Each comb laser of an array has a common or overlapping spectral range, with each laser in the array being optically coupled to a local optical bus. The effective spectral range of the lasers in each array are different, or distinct, as to each array. An optical coupler is disposed within the silicon interposer and is optically coupled to each of the local optical buses. An ASIC (application specific integrated circuit) is bonded to the silicon interposer and provides control and operation of the comb laser modules.

Abstract: A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

Abstract: An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.

Abstract: One example includes an apparatus that includes a plurality of input/output (I/O) ports and a body portion. The plurality of I/O ports can be arranged at a plurality of peripheral surfaces of the body portion. The body portion includes a solid dielectric material having a substantially constant index of refraction. The body portion also includes parallel planar surfaces spaced apart by and bounded by the plurality of peripheral surfaces. The solid dielectric material in the body portion can be writable via a laser-writing process to form an optical waveguide extending between a set of the plurality of I/O ports.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Abstract: One example includes an optical fiber interface. The interface includes a first substrate comprising a pair of opposing surfaces. The substrate includes an opening extending therethrough that defines an inner periphery. One surface of the opposing surfaces of the first substrate can be configured to be bonded to a given surface of a second substrate. The interface also includes a plurality of optical fibers secured to the other opposing surface of the first substrate and extending inwardly from a plurality of surfaces of the inner periphery at fixed locations to align the set of optical fibers to optical inputs/outputs (I/O) of an optical system chip that is coupled to the given surface of the second substrate and received through the opening.

Abstract: An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.