Abstract: An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.

Abstract: A quantum dot comb laser includes a body defining a lasing cavity and an extension defining an external cavity, the FSR of the lasing cavity being an inverse of an integer multiple of the FSR of the external cavity.

Abstract: One example includes an optical fiber interface. The interface includes a first substrate comprising a pair of opposing surfaces. The substrate includes an opening extending therethrough that defines an inner periphery. One surface of the opposing surfaces of the first substrate can be configured to be bonded to a given surface of a second substrate. The interface also includes a plurality of optical fibers secured to the other opposing surface of the first substrate and extending inwardly from a plurality of surfaces of the inner periphery at fixed locations to align the set of optical fibers to optical inputs/outputs (I/O) of an optical system chip that is coupled to the given surface of the second substrate and received through the opening.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Abstract: An example optical receiver may have an optical receiver front-end, four slicers, and a logic block. The optical receiver front-end may include a transimpedance amplifier to convert a photodiode output signal to a voltage signal. Three of the slicers may be data slicers, and one of the slicers may be an edge slicer. The slicers may each: shift the voltage signal based on an offset voltage set for the respective slicer, determine whether the shifted voltage signal is greater than a threshold value and generate a number of comparison signals based on the determining, and generate multiple digital signals by demuxing the comparison signals. The logic block may perform PAM-4 to binary decoding based on the data signals output by the data slicers and clock-and-data-recovery based on the digital signals output by the edge slicer.

Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.

Abstract: One example includes a bias-based Mach-Zehnder modulation (MZM) system. The system includes a Mach-Zehnder modulator to receive and split an optical input signal and to provide an intensity-modulated optical output signal based on a high-frequency data signal to modulate a relative phase of the split optical input signal to transmit data and based on a bias voltage to modulate the relative phase of the split optical input signal to tune the Mach-Zehnder modulator. The system also includes a bias feedback controller to compare a detection voltage associated with the intensity-modulated output signal with a reference voltage to measure an extinction ratio associated with an optical power of the intensity-modulated optical output signal and to adjust the bias voltage based on the comparison to substantially maximize the extinction ratio.

Abstract: An example system includes an optical modulator and a multiplexing controller. The modulator includes a data bus for receiving at least one data signal, a plurality of multiplexers and a plurality of modulating segments. Each multiplexer is coupled to the data bus to receive at least one data signal and to output a multiplexed signal. Each modulating segment may receive the multiplexed signal from one of the plurality of multiplexers and modulate the multiplexed signal using an optical input. The multiplexing controller may be in communication with the plurality of multiplexers and may configure each of the plurality of multiplexers in accordance with a selected modulation type.

Abstract: In the examples provided herein, an optical logic gate includes multiple couplers, where no more than two types of couplers are used in the optical logic gate, and further wherein the two types of couplers consist of: a 3-dB coupler and a weak coupler with a given transmission-to-reflection ratio. The optical logic gate also includes a first resonator, wherein the first resonator comprises a photonic crystal resonator or a nonlinear ring resonator, wherein in operation, the first resonator has a dedicated continuous wave input to bias a complex amplitude of a total field input to the first resonator such that the total field input is either above or below a nonlinear switching threshold of the first resonator, where the optical logic gate is an integrated photonic circuit.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

Abstract: A quantum dot comb laser includes a body defining a lasing cavity and an extension defining an external cavity, the FSR of the lasing cavity being an inverse of an integer multiple of the FSR of the external cavity.

Abstract: A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

Abstract: Processes and apparatuses described herein reduce the manufacturing time, the cost of parts, and the cost of assembly per laser for photonic interconnects incorporated into computing systems. An output side of a laser assembly is placed against an input side of a silicon interposer (SiP) such that each pad in a plurality of pads positioned on the output side of the laser assembly is in contact with a respective solder bump that is also in contact with a corresponding pad positioned on the input side of the SiP. The laser assembly is configured to emit laser light from the output side into an input grating of the SiP. The solder bumps are heated to a liquid phase. Capillary forces of the solder bumps realign the laser assembly and the SiP while the solder bumps are in the liquid phase. The solder bumps are then allowed to cool.

Abstract: One example includes an optical interconnect device. The optical interconnect device includes a plurality of optical fiber ports coupled to a body portion. The optical interconnect device also includes a plurality of optical fibers that are secured within the body portion. A first portion of the plurality of optical fibers can extend from a first of the plurality of optical fiber ports to a second of the plurality of optical fiber ports, and a second portion of the plurality of optical fibers can extend from the first of the plurality of optical fiber ports to a third of the plurality of optical fiber ports.

Abstract: Processes and apparatuses described herein reduce the manufacturing time, the cost of parts, and the cost of assembly per laser for photonic interconnects incorporated into computing systems. An output side of a laser assembly is placed against an input side of a silicon interposer (SiP) such that each pad in a plurality of pads positioned on the output side of the laser assembly is in contact with a respective solder bump that is also in contact with a corresponding pad positioned on the input side of the SiP. The laser assembly is configured to emit laser light from the output side into an input grating of the SiP. The solder bumps are heated to a liquid phase. Capillary forces of the solder bumps realign the laser assembly and the SiP while the solder bumps are in the liquid phase. The solder bumps are then allowed to cool.

Abstract: In example implementations, a method executed by a processor is provided. The method receives a simulated photonic data input based on a theoretical photonic design that meets a target specification. A complementary metal-oxide semiconductor (CMOS) circuit design is designed based on the simulated photonic data input using a pre-layout simulation. An experimental photonic data input based on a fabricated photonics device that meets the target specification is received. The CMOS circuit is designed based on the experimental photonic data input using a post-layout simulation. A physical circuit CMOS circuit design and a layout that includes detailed physical dimensions associated with the physical CMOS circuit design that is based on the pre-layout and the post-layout are transmitted to a CMOS foundry.

Abstract: In the examples provided herein, an optical logic gate includes multiple couplers, where no more than two types of couplers are used in the optical logic gate, and further wherein the two types of couplers consist of: a 3-dB coupler and a weak coupler with a given transmission-to-reflection ratio. The optical logic gate also includes a first resonator, wherein the first resonator comprises a photonic crystal resonator or a nonlinear ring resonator, wherein in operation, the first resonator has a dedicated continuous wave input to bias a complex amplitude of a total field input to the first resonator such that the total field input is either above or below a nonlinear switching threshold of the first resonator, where the optical logic gate is an integrated photonic circuit.

Abstract: A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

Abstract: In example implementations, an optical gate is provided. The optical gate receives at least one optical signal via a waveguide of an optical memory gate. The optical gate compares a wavelength of the at least one optical signal to a resonant wavelength associated with a resonator. When the wavelength of the at least one optical signal matches the resonant wavelength, a value that is stored in the resonator is read out via the at least one optical signal. Then, the at least one optical signal with the value that is read out is transmitted out of the optical gate.