Patents by Inventor Ren Chen

Ren Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240096297
    Abstract: In some examples, a controller of a wearable device causes display by the wearable device of a test image, and adjusts a color property of the displayed test image. In response to an input provided by a user responsive to the displayed test image as the color property is adjusted, the controller determines a distribution of color wavelengths for an eye of the user, and detects a color vision deficiency of the user based on the determined distribution of color wavelengths. The controller provides control information to control a display device of the wearable device to compensate for the color vision deficiency.
    Type: Application
    Filed: September 15, 2022
    Publication date: March 21, 2024
    Inventors: Hsiang-Ta Ke, Yu-Ren Chen, Chun-Feng Li
  • Publication number: 20240084450
    Abstract: A shower head structure and a plasma processing apparatus are provided. The shower head structure includes a plate body with a first zone and a second zone on a first surface. A plurality of first through holes are in the first zone, each of the first through holes having a diameter uniform with others of the first through holes. A plurality of second through holes are in the second zone. The first zone is in connection with the second zone, and the diameter of each of the first through holes is greater than a diameter of each of the second through holes. A plasma processing apparatus includes the shower head structure is also provided.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: HUAN-CHIEH CHEN, JHIH-REN LIN, TAI-PIN LIU, SHYUE-SHIN TSAI, KEITH KUANG-KUO KOAI
  • Publication number: 20240083648
    Abstract: Embodiments of the invention overcome the shortcomings of prior technologies by infusing nanocellulose in a fibrillated form to enhance the properties of cellulose pulp. These properties may include, for example, the mechanical and barrier properties, i.e., tensile strength, liquid, and gas impermeability such as oxygen, carbon dioxide, and oil, can be improved substantially. Another embodiment of the invention further provide a fibrillated cellulose composite material that include a blend of fibrillated cellulose and polymers to create improved properties over cellulose-based materials. The composite material further may be generally free of chemical additives to enhance the above properties.
    Type: Application
    Filed: February 1, 2022
    Publication date: March 14, 2024
    Applicant: Ecoinno (H.K.) Limited
    Inventors: George Dah Ren CHEN, Yiu Wen CHANG
  • Publication number: 20240088148
    Abstract: A semiconductor device includes a substrate, a stack of semiconductor nanosheets, a dielectric wall, and a gate structure. The substrate includes a nanosheet mesa, and the stack of semiconductor nanosheets is disposed on the nanosheet mesa. The dielectric wall crosses through the nanosheet mesa and the stack of semiconductor nanosheets. The gate structure wraps the stack of semiconductor nanosheets and crosses over the dielectric wall, wherein a top of the dielectric wall has a recess.
    Type: Application
    Filed: January 11, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Ren Chen, Chung-Ting Li, Shih-Hsun Chang
  • Publication number: 20240087960
    Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.
    Type: Application
    Filed: November 13, 2023
    Publication date: March 14, 2024
    Inventors: Yu-Lien HUANG, Ching-Feng FU, Huan-Just LIN, Fu-Sheng LI, Tsai-Jung HO, Bor Chiuan HSIEH, Guan-Xuan CHEN, Guan-Ren WANG
  • Publication number: 20240088775
    Abstract: A power conversion apparatus and an energy storage system, including a power conversion circuit, a first power terminal, a second power terminal, and a third power terminal. The power conversion circuit includes a first positive end, a first negative end, a second positive end, a second negative end, and at least one power device. The first negative end and the second negative end have a same potential. The power conversion circuit is configured to convert a first voltage input by a first device into a second voltage and output the second voltage to a second device. The first power terminal is connected to the first positive end, the first negative end or the second negative end is connected to the second power terminal, and the third power terminal is connected to the second positive end.
    Type: Application
    Filed: September 13, 2023
    Publication date: March 14, 2024
    Applicant: Huawei Digital Power Technologies Co., Ltd.
    Inventors: Baoguo CHEN, Ren SHENG, Rui GE, Ling LIU
  • Patent number: 11930056
    Abstract: An embodiment for automatically controlling peripheral devices based on online meeting participant information. The embodiment may detect participants of an online meeting and generate a participant information table. The embodiment may generate a participant group table including one or more preliminary participant groups based on the participant information. The embodiment may generate and send audio through peripheral devices associated with at least one participant in each of the one or more preliminary participant groups to identify the participants in physically shared meeting spaces. The embodiment may update the participant group table to include confirmed participant groups based on the identified participants in the physically shared meeting spaces. The embodiment may determine a presenter for each of the confirmed participant groups and update the participant information.
    Type: Grant
    Filed: February 15, 2023
    Date of Patent: March 12, 2024
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jing Ren, Jing Wen Chen, Zhao Yu Wang, Xizhuo Zhang, Yi Jie Ma
  • Publication number: 20240071711
    Abstract: Disclosed herein is an apparatus comprising: a first electrically conductive layer, a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the eclectically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.
    Type: Application
    Filed: September 28, 2023
    Publication date: February 29, 2024
    Inventors: Xuerang HU, Weiming REN, Xuedong LIU, Zhong-wei CHEN
  • Patent number: 11911963
    Abstract: The present invention relates to an exchangeable additive manufacturing machine system. The system includes a manufacturing spindle; a thermal conducting module configured to include a working well in a center portion, wherein the manufacturing spindle is configured to rotate in the working well and the manufacturing spindle and the working well defines a manufacturing region; and a capillary based functional liquid releasing module configured on the thermal conducting module to release a functional liquid to one of a first gap, a second gap and a third gap included between the thermal conducting module and the manufacturing platform.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: February 27, 2024
    Assignee: National Central University
    Inventors: Chao-Yaug Liao, Bo-Ren Chen
  • Patent number: 11917571
    Abstract: Disclosed in the present application are a locating method for an uplink time difference of arrival, and an apparatus thereof.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: February 27, 2024
    Assignee: Datang Mobile Communications Equipment Co., Ltd.
    Inventors: Ren Da, Fang-Chen Cheng, Hui Li, Haiyang Quan, Bin Ren, Xueyuan Gao, Qiubin Gao
  • Patent number: 11894448
    Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (FET) formed on the semiconductor substrate. The FET includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Harry-Hak-Lay Chuang, Yi-Ren Chen, Chi-Wen Liu, Chao-Hsiung Wang, Ming Zhu
  • Publication number: 20230415413
    Abstract: The present invention relates to an exchangeable additive manufacturing machine system. The system includes a manufacturing spindle; a thermal conducting module configured to include a working well in a center portion, wherein the manufacturing spindle is configured to rotate in the working well and the manufacturing spindle and the working well defines a manufacturing region; and a capillary based functional liquid releasing module configured on the thermal conducting module to release a functional liquid to one of a first gap, a second gap and a third gap included between the thermal conducting module and the manufacturing platform.
    Type: Application
    Filed: October 19, 2022
    Publication date: December 28, 2023
    Inventors: CHAO-YAUG LIAO, BO-REN CHEN
  • Publication number: 20230415419
    Abstract: The present invention relates to an exchangeable additive manufacturing machine system. The system includes a manufacturing spindle; a thermal conducting module configured to include a working well in a center portion, wherein the manufacturing spindle is configured to rotate in the working well and the manufacturing spindle and the working well defines a manufacturing area; and an air curtain isolation mechanism module, configured to attach on a peripheral region in proximity to the thermal conducting module to actively generate an airflow across the working well and the manufacturing area to isolate the manufacturing area from an external environment.
    Type: Application
    Filed: October 19, 2022
    Publication date: December 28, 2023
    Inventors: CHAO-YAUG LIAO, BO-REN CHEN
  • Publication number: 20230369320
    Abstract: A device includes a substrate, a first well region, a second well region, and a dummy region in the substrate, where the dummy region is a non-functional region situated between the first well region and the second well region. The first well region is configured to receive a first voltage and the second well region is configured to receive a second voltage that is different than the first voltage. The device further includes an active region that extends through at least part of the first well region and at least part of the dummy region, and at least one isolation structure situated in the dummy region between a first gate structure that extends over the active region in the dummy region on one side of the at least one isolation structure and a second gate structure on another side of the at least one isolation structure.
    Type: Application
    Filed: March 13, 2023
    Publication date: November 16, 2023
    Inventors: Ya-Chi Chou, Wei-Ling Chang, Wei-Ren Chen, Chi-Yu Lu
  • Patent number: 11813073
    Abstract: A wound multiple sensing method, including: calculating the similarity between the current data sequence and each of the case-data sequences in each of the reference cases; selecting the case-data sequence which has the greatest similarity with the current data sequence, from the case-data sequences in each of the reference cases, to be a similar case-data sequence in each of the reference cases, wherein each similar case-data sequence corresponds to a similar case treatment; performing a multiple regression analysis using the similar case-data sequences and the similar case treatments to calculate a fitness function, wherein the dependent variable of the fitness function is a wound change; performing a parameter optimization algorithm using the current data sequence and the fitness function to calculate an optimal treatment which maximizes the wound change, and to calculate an expected wound change value that corresponds to the optimal treatment.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: November 14, 2023
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yue-Min Jiang, Jian-Hong Liu, Shang-Chih Hung, Ho-Hsin Lee, Jian-Ren Chen, Min-Yi Hsieh, Ren-Guey Lee
  • Patent number: 11818887
    Abstract: An erasable programmable single-poly non-volatile memory cell and an associated array structure are provided. In the memory cell of the array structure, the assist gate region is composed at least two plate capacitors. Especially, the assist gate region at least contains a poly/poly plate capacitor and a metal/poly plate capacitor. The structures and the fabricating processes of the plate capacitors are simple. In addition, the uses of the plate capacitors can effectively reduce the size of the memory cell.
    Type: Grant
    Filed: March 4, 2022
    Date of Patent: November 14, 2023
    Assignee: EMEMORY TECHNOLOGY INC.
    Inventors: Hsueh-Wei Chen, Woan-Yun Hsiao, Wei-Ren Chen, Wein-Town Sun
  • Patent number: 11818838
    Abstract: A metal-clad laminate is provided. The metal-clad laminate includes: a dielectric layer, which has a first reinforcing material and a dielectric material formed on the surface of the first reinforcing material, wherein the dielectric material includes 60 wt % to 80 wt % of a first fluoropolymer and 20 wt % to 40 wt % of a first filler; an adhesive layer, which is disposed on at least one side of the dielectric layer and includes an adhesive material, wherein the adhesive material has 60 wt % to 70 wt % of a second fluoropolymer and 30 wt % to 40 wt % of a second filler; and a metal foil, which is disposed on the other side of the adhesive layer that is opposite to the dielectric layer, wherein the melting point of the second fluoropolymer is lower than the melting point of the first fluoropolymer.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: November 14, 2023
    Assignee: TAIWAN UNION TECHNOLOGY CORPORATION
    Inventors: Wen-Ren Chen, Shi-Ing Huang, Shur-Fen Liu
  • Publication number: 20230361108
    Abstract: An integrated circuit for power clamping is provided. The integrated circuit for power clamping is electrically coupled to an internal circuit of an integrated circuit through a power line and a ground line, and includes a switch, a first resistor, a capacitor, an inverter and a voltage detection circuit. The voltage detection circuit detects a voltage of the power line, and when the voltage of the power line exceeds a threshold value, the voltage detection circuit electrically connects a first node to the ground line, such that a low potential signal from the ground line is input to the input terminal of the inverter, and then the switch is turned on to form a discharge path.
    Type: Application
    Filed: May 4, 2023
    Publication date: November 9, 2023
    Inventors: JYUN-REN CHEN, SHIH-HSIN LIAO, PO-CHING LIN, TAY-HER TSAUR
  • Publication number: 20230361105
    Abstract: An integrated circuit (IC) device includes a substrate, at least one active region over the substrate and elongated along a first axis, at least one gate region extending across the at least one active region, and at least one input/output (IO) pattern configured to electrically couple one or more of the at least one active region and the at least one gate region to other circuitry. The at least one IO pattern extends obliquely to the at least one active region or the at least one gate region.
    Type: Application
    Filed: July 19, 2023
    Publication date: November 9, 2023
    Inventors: Wei-Ren CHEN, Cheng-Yu LIN, Hui-Zhong ZHUANG, Yung-Chen CHIEN, Jerry Chang Jui KAO, Huang-Yu CHEN, Chung-Hsing WANG
  • Publication number: 20230328978
    Abstract: A non-volatile memory cell includes a p-type well region, a first n-type doped region, a second n-type doped region, a first gate structure, a second gate structure, a third gate structure and a protecting layer. The first n-type doped region and the second n-type doped region are formed under a surface of the p-type well region. The first gate structure and the second gate structure are formed over the surface of the p-type well region and arranged between the first n-type doped region and the second n-type doped region. A first part of a first gate layer of the first gate structure and the second gate structure are covered by the protecting layer. The third gate structure is formed over the surface of the p-type well region and arranged between the first gate structure and the second gate structure.
    Type: Application
    Filed: March 27, 2023
    Publication date: October 12, 2023
    Inventors: Wein-Town SUN, Woan-Yun HSIAO, Wei-Ren CHEN, Hsueh-Wei CHEN