Abstract: The present invention discloses an electrostatic discharge protection circuit having time-extended discharging mechanism. A RC circuit is coupled between an ESD input terminal that receives an ESD input and a ground terminal and includes an input control terminal. An inverter includes a P-type transistor coupled between the ESD input terminal and an output control terminal and an N-type transistor circuit including N-type transistors coupled in series and between the output control terminal and a ground terminal, wherein two of the N-type transistors has an internal connection terminal. Gates of the P-type transistor and N-type transistors are controlled by the input control terminal. A switch transistor is coupled between the ESD input terminal and the internal connection terminal. A discharging transistor is coupled between the ESD input terminal and the ground terminal. The gates of the switch transistor and the discharging transistor are controlled by the output control terminal.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.

Abstract: An electronic processing device including a memory and a Micro Control Unit (MCU) is provided. The memory includes a first memory block and a second memory block. The MCU executes first program code stored in the first memory block to write an update program code into the second memory block, and remaps a base address for a reboot of the electronic processing device from the first memory block to the second memory block in response to successfully writing the update program code into the second memory block. After that, the MCU triggers the reboot of the electronic processing device to execute the update program code stored in the second memory block.

Abstract: The present invention discloses an electrostatic discharge protection circuit having false-trigger prevention mechanism. A RC circuit, including an input control terminal, is coupled between an electrostatic discharge input terminal for receiving an input power and a ground terminal An inverter includes a P-type transistor circuit, including P-type transistors coupled between the electrostatic discharge input terminal and an output control terminal in series and having an internal connection terminal between two of the P-type transistors, and an N-type transistor, coupled between the output control terminal and the ground terminal. Gates of the P-type and N-type transistors are controlled by the input control terminal A switch transistor, having the gate controlled by the input control terminal, is coupled between the internal connection terminal and the ground terminal.

Abstract: A desiccant wheel is provided to be rotatable. Through the body of the wheel or a surface adsorbent, water vapor in humid air flow is adsorbed. By passing a high-temperature air flow through the wheel, the body or surface coating is regenerated with moisture removed. Along a cross-section radial, the wheel is divided into different areas. The body has three-dimensionally inter-connected pores. The pores can be of different types. The wheel is a complete concentric cylinder or a concentric cylinder comprising equal or unequal sectors. The equal or unequal sectors are separated with each other. The wheel can rotate at a fixed speed for continually repeating a process of adsorbing, transiting, and regenerating. Thereby, drying can be carried out without causing physical or chemical change to heat-sensitive material, which also improves drying efficiency, reduces size, lowers power consumption, and helps in carbon reduction for industry.

Abstract: A non-volatile memory includes a substrate region, a barrier layer, an N-type well region, an isolation structure, a first gate structure, a first sidewall insulator, a first P-type doped region, a second P-type doped region and an N-type doped region. The isolation structure is arranged around the N-type well region and formed over the barrier layer. The N-type well region is surrounded by the isolation structure and the barrier layer. Consequently, the N-type well region is an isolation well region. The first gate structure is formed over a surface of the N-type well region. The first sidewall insulator is arranged around the first gate structure. The first P-type doped region, the second P-type doped region and the N-type doped region are formed under the surface of the N-type well region.

Abstract: A semiconductor structure includes a plurality of vias and a metal layer. The vias disposed on a semiconductor substrate. The metal layer has a plurality of metal lines and at least one transmission gate line region. The metal lines are connected to the vias. The at least one transmission gate line region is connected to at least one transmission gate corresponding to at least one transmission gate circuit. The transmission gate line region includes at least one different-net via pair. The different-net via pair has two metal lines and each of the two metal lines is connected to a via respectively. The two metal lines extend along a first axis but toward opposite directions. A distance between the two vias of the different-net via pair is within about 1.5 poly pitch.

Abstract: An LED tube lamp, comprising: a lamp tube; a first circuit board, disposed in the lamp tube, having a plurality of light sources mounted thereon; two lamp caps disposed at respective ends of the lamp tube; and a power supply substantially disposed in one or both of the two lamp caps, the power supply having a second circuit board, the second circuit board is electrically connected to the first circuit board. The lamp cap includes a body and an insulating portion, the insulating portion constitutes at least a part of an end of the lamp cap, the insulating portion has an inner side surface, and a slot is set on the inner side surface, the second circuit board is inserted into the slot for fastening.

Abstract: A memory device includes a well, a poly layer, a dielectric layer, an alignment layer and an active area. The poly layer is formed above the well. The dielectric layer is formed above the poly layer. The alignment layer is formed on the dielectric layer, used to receive an alignment layer voltage and substantially aligned with the dielectric layer in a projection direction. The active area is formed on the well. The dielectric layer is thicker than the alignment layer. A first overlap area of the poly layer and the active area is smaller than a second overlap area of the poly layer and the dielectric layer excluding the first overlap area.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first region and a second region; a first semiconductor mesa formed on the semiconductor substrate within the first region; a second semiconductor mesa formed on the semiconductor substrate within the second region; and a field effect transistor (FET) formed on the semiconductor substrate. The FET includes a first doped feature of a first conductivity type formed in a top portion of the first semiconductor mesa; a second doped feature of a second conductivity type formed in a bottom portion of the first semiconductor mesa, the second semiconductor mesa, and a portion of the semiconductor substrate between the first and second semiconductor mesas; a channel in a middle portion of the first semiconductor mesa and interposed between the source and drain; and a gate formed on sidewall of the first semiconductor mesa.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.

Abstract: A pixel array substrate including a substrate, pixel structures, and transfer lines is provided. The pixel structures are disposed on the substrate. Each pixel structure includes a data line, a gate line, an active device, and a pixel electrode. The active device is electrically connected to the data line and the gate line. The pixel electrode is electrically connected to the active device. The pixel electrode defines alignment domains. The alignment domains have different alignment directions. The transfer lines are arranged in a first direction. Gate lines of the pixel structures are arranged in a second direction. The first direction and the second direction are interlaced. The transfer lines are electrically connected to the gate lines. The pixel structures include a first pixel structure. The transfer lines include a first transfer line. The first transfer line overlaps a boundary between the alignment domains of the first pixel structure.

Abstract: A method of analyzing a semiconductor wafer includes obtaining a graphic data system (GDS) file corresponding to the semiconductor wafer, using GDS information from the GDS file to provide coordinates of a layout feature of the semiconductor wafer to an electron microscope, using the electron microscope to capture a raw image from the semiconductor wafer based on the coordinates of the layout feature, and performing a measurement operation on the raw image.

Abstract: A multi-time programming non-volatile memory includes a select transistor, a floating gate transistor, a switch transistor, a capacitor and an erase gate element. The select transistor is connected with a select line and a source line. The floating gate transistor includes a floating gate. The floating gate transistor is connected with the select transistor. The switch transistor is connected with a word line, the floating gate transistor and a bit line. A first terminal of the capacitor is connected with the floating gate. A second terminal of the capacitor is connected with a control line. The erase gate element includes the floating gate, a gate oxide layer and a p-type region. The erase gate element is connected with an erase line. The floating gate of the erase gate element at least includes an n-type floating gate part.

Abstract: A chip includes a level control circuit, an output circuit, a level supply circuit, and an output terminal. The level control circuit is configured to output a response signal in response to an operation mode of the chip. The output circuit has an output side, and the output side couples to the output terminal. When the operation mode of the chip is a working mode, the response signal is at a first level, and the output circuit is configured to output an output signal at the output terminal. When the operation mode of the chip is a power saving mode, the response signal is at a second level, the output side of the output circuit is in a floating state, and the level supply circuit is configured to provide a level voltage to the output terminal according to the response signal, so that the output terminal has a fixed level.

Abstract: A method of labelling features for image recognition and an apparatus thereof are provided. The method includes inputting an image to be recognized to an image recognition model to obtain a classification result; obtaining a plurality of recognized features and positions of the recognized features from the image to be recognized based on activation maps respectively corresponding to a plurality of preset features in the classification result; and labelling the recognized features and the positions of the recognized features activating the classification result. Accordingly, the features determined by the image recognition model can be showed clearly by the method of labelling features for image recognition and the apparatus thereof.

Abstract: A method includes positioning adjacent first through fourth active regions in a cell of an IC layout diagram, the first active region being a first type of an n-type or a p-type and corresponding to a first total number of fins, the second active region being a second type of the n-type or the p-type and corresponding to a second total number of fins, the third active region being the second type and corresponding to a third total number of fins, and the fourth active region being the first type and corresponding to a fourth total number of fins. Each of the first and second total numbers of fins is greater than each of the third and fourth total numbers of fins, and at least one of the positioning the first, second, third, or fourth active regions is performed by a processor.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.

Abstract: A graph processing system for concurrent property graph queries of a property graph implemented in a distributed network computes on respective nodes a subgraph shard represented as edge-sets containing vertices within a certain range. Each node stores data for a subgraph shard that contains a range of local vertices that are a subset of all vertices of the property graph. Each subgraph shard also has boundary vertices having edges that connect the subgraph shard to boundary vertices of another subgraph shard. Upon receipt of concurrent queries of the property graph, a query of the subgraph shards is scheduled in accordance with an initial vertex for each concurrent user query. The property graph is traversed by traversing edge-sets within a subgraph shard on each node and during traversal messaging is used to send values of boundary vertices to at least one other node having another subgraph shard sharing the boundary vertices.