Abstract: The present invention includes an electrochemical redox active material. The electrochemical redox active material includes a cocrystalline metallic compound having a general formula AxMO4?yXOy.M?O, where A is at least one metallic element selected from a group consisting of alkali metals, M and M? may be identical or different and independently of one another at least one selected from a group consisting of transition metals and semimetals, X is P or As, 0.9?x?1.1, and 0<y<4.

Abstract: A capacitor structure is provided. The capacitor structure comprises a plurality of parallel conductive line levels and a plurality of vias. Each conductive line level comprises first conductive lines parallel to each other and second conductive lines parallel to each other. Also, the first conductive lines on different conductive line levels are aligned to each other and the second conductive lines on different conductive line levels are aligned to each other so as to form first conductive line co-planes and second conductive line co-planes. The vias are located on the conductive line co-planes and between the conductive line levels for connecting the conductive lines on the neighboring conductive line levels. The vias, on a height level of each of the conductive line co-planes, are arranged only on one of the neighboring conductive line co-planes.

Abstract: A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS) transistor region. The resistor is disposed on the substrate within the resistor region. The resistor includes a first dielectric layer, a metal layer, a second dielectric layer, and a semiconductor layer sequentially stacked on the substrate. The first gate structure is disposed on the substrate within the MOS transistor region. The first gate structure includes the first dielectric layer, the metal layer, and the semiconductor layer sequentially stacked on the substrate.

Abstract: A method for forming a thin film resistor includes providing a substrate having a transistor region and a thin film resistor region defined thereon, sequentially forming a dielectric layer, a metal layer and a first hard mask layer on the substrate, patterning the first hard mask layer to form at least a thin film resistor pattern in the thin film resistor region, sequentially forming a polysilicon layer and a second hard mask layer on the substrate, patterning the second hard mask layer to form at least a gate pattern in the transistor region, and performing an etching process to form a gate and a thin film resistor respectively in the transistor region and the thin film resistor region.

Abstract: An ion storage compound of cathode material and method for preparing the same are disclosed. The method for preparing the ion storage compound comprises steps of providing a first reactant having a formula of A3xM12y(PO4)3, providing a second reactant being at least one compound selected from the group consisting of SiC, BN and metal oxide having a formula of M2aOb, and reacting the first reactant with the second reactant to form the ion storage compound. A is at least one element selected from the group consisting of Groups IA, IIA and IIIA; each of M1 and M2 is at least one element selected from the group consisting of Groups IIA, IIIA, IVA and VA and transition metal elements, respectively; and 0<x?1.2, 1.2?y?1.8, 0<a?7, and 0<b?6.

Abstract: An audio amplifier including a differential mode integrator, a first comparator, a second comparator, a logic circuit and a driving unit is provided. The differential mode integrator receives a differential input signal and a differential output signal and outputs a differential mode intermediate signal. The first comparator has a positive input terminal receiving a first terminal signal of the differential mode intermediate signal, a negative input terminal receiving a ramp signal, and generates a first signal. The second comparator has a positive input terminal receiving a ramp signal, a negative input terminal receiving a second terminal signal of the differential mode intermediate signal, and generates a second signal. The logic circuit performs a logic operation on the first and second signals to generate a third signal and a fourth signal. The driving unit generates a differential output signal to drive a load according to the third and fourth signals.

Abstract: A cathode material including a first compound and a second compound is disclosed. The first compound has a formula of A3xM12y(PO4)3 and includes plural micrometer-sized secondary particles, each of which has a particle size larger than 1 ?m and is composed of crystalline nanometer-sized primary particles, each of which has a particle size ranging from 10 to 500 nm. The second compound is at least one compound selected from the group consisting of SiC, BN and metal oxide having a formula of M2aOb and is coated on the first compound. A is at least one element selected from the group consisting of Groups IA, IIA and IIIA; each of M1 and M2 is at least one element selected from the group consisting of Groups IIA, IIIA, IVA and VA and transition metal elements, respectively; and 0<x?1.2, 1.2?y?1.8, 0<a?7, and 0<b?6.

Abstract: A method for determining the presence of cancer cells in a tissue sample or cell sample by detecting the presence of phosphorylated p68 RNA helicase in the sample. Further, a method for determining the presence of metastatic cancer cells in a tissue sample or cell sample by detecting the level of phosphorylated P68 RNA helicase in the sample such that a greater level of the phosphorylated protein in the sample as compared to non-metastatic cells is an indication of the metastatic cancer cells in the sample.

Abstract: A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS) transistor region. The resistor is disposed on the substrate within the resistor region. The resistor includes a first dielectric layer, a metal layer, a second dielectric layer, and a semiconductor layer sequentially stacked on the substrate. The first gate structure is disposed on the substrate within the MOS transistor region. The first gate structure includes the first dielectric layer, the metal layer, and the semiconductor layer sequentially stacked on the substrate.

Abstract: An audio amplifier including a differential mode integrator, a first comparator, a second comparator, a logic circuit and a driving unit is provided. The differential mode integrator receives a differential input signal and a differential output signal and outputs a differential mode intermediate signal. The first comparator has a positive input terminal receiving a first terminal signal of the differential mode intermediate signal, a negative input terminal receiving a ramp signal, and generates a first signal. The second comparator has a positive input terminal receiving a ramp signal, a negative input terminal receiving a second terminal signal of the differential mode intermediate signal, and generates a second signal. The logic circuit performs a logic operation on the first and second signals to generate a third signal and a fourth signal. The driving unit generates a differential output signal to drive a load according to the third and fourth signals.

Abstract: A method for forming a thin film resistor includes providing a substrate having a transistor region and a thin film resistor region defined thereon, sequentially forming a dielectric layer, a metal layer and a first hard mask layer on the substrate, patterning the first hard mask layer to form at least a thin film resistor pattern in the thin film resistor region, sequentially forming a polysilicon layer and a second hard mask layer on the substrate, patterning the second hard mask layer to form at least a gate pattern in the transistor region, and performing an etching process to form a gate and a thin film resistor respectively in the transistor region and the thin film resistor region.

Abstract: The present invention is directed to a system for thermally cancelling postage and a thermally cancellable picture postage stamp for use therein. A picture postage stamp is disclosed wherein the design and postage information are affixed on thermally reactive paper. Alternatively, the indicia may be comprised of thermally reactive inks or dyes. Cancelling a thermally cancellable picture postage stamp is accomplished with a heat source such as a cancellation write head. Hidden text of code can be embedded in the thermal paper and the cancellation mark can be any indicia or information that can be generated by a thermal print head. Cancelling the thermally cancellable picture postage stamp may also be accomplished manually with a pointed instrument or any semi hard edge such as a pen cap, ring or fingernail.

Abstract: The present invention includes an electrochemical redox active material. The electrochemical redox active material includes a cocrystalline metallic compound having a general formula AxMO4-yXOy.M?O, where A is at least one metallic element selected from a group consisting of alkali metals, M and M? may be identical or different and independently of one another at least one selected from a group consisting of transition metals and semimetals, X is P or As, 0.9?x?1.1, and 0<y<4.

Abstract: A contrast agent having a contrast protein have contrast properties and at least one targeting moiety, wherein the at least one targeting moiety is operatively linked to or incorporated within the contrast protein. Methods for targeting contrast agents and for preparing such agents are included.

Abstract: Contrast agents comprising a scaffold protein having at least one operative integrated metal ion binding site.

Abstract: A composition for use in an electrochemical redox reaction is described. The composition may comprise a material represented by a general formula MyXO4 or AxMyXO4, where each of A (where present), M, and X independently represents at least one element, O represents oxygen, and each of x (where present) and y represent a number, and an oxide of at least one of various elements, wherein the material and the oxide are cocrystailine, and/or wherein a volume of a crystalline structural unit of the composition may be different than a volume of a crystalline structural unit of the material alone. An electrode comprising such a composition is also described, as is an electrochemical cell comprising such an electrode. A process of preparing a composition for use in an electrochemical redox reaction is also described.

Abstract: In certain embodiments, this present invention provides methods of identifying and using agonists and antagonists of Delta-like 4 (Dll4) signaling.

Abstract: The present invention includes an electrochemical redox active material. The electrochemical redox active material includes a cocrystalline metallic compound having a general formula AxMO4-yXOy.M?O, where A is at least one metallic element selected from a group consisting of alkali metals, M and M? may be identical or different and independently of one another at least one selected from a group consisting of transition metals and semimetals, X is P or As, 0.9?x?1.1, and 0<y<4.

Abstract: A Delta-Sigma analog-to-digital converter and a method thereof are provided. According to a non-overlapping clock signal, the Delta-Sigma analog-to-digital converter performs an integration process on the difference between a plurality of input signals and the corresponding feedback signals to generate an integrated signal. Then, according to a selecting signal, the integrated signal is selectively output. Afterward, according to a latch signal, the selectively output integrated signal is quantized and latched by only one quantizer, thereby generating a digital output signal correspondingly. Accordingly, by using only one quantizer, the present invention can have the same function as the prior art which uses a plurality of quantizers, thereby decreasing the occupied chip area.

Abstract: A composition for use in an electrochemical redox reaction is described. The composition may comprise a material represented by a general formula MyXO4 or AxMyXO4, where each of A (where present), M, and X independently represents at least one element, O represents oxygen, and each of x (where present) and y represent a number, and an oxide of at least one element, wherein the material and the oxide are cocrystalline, and/or wherein a volume of a crystalline structural unit of the composition is larger than a volume of a crystalline structural unit of the material alone. An electrode comprising such a composition is also described, as is an electrochemical cell comprising such an electrode. A process of preparing a composition for use in an electrochemical redox reaction is also described.