Abstract: Methods, systems, and apparatuses related to runtime selection of memory devices and storage devices in a disaggregated memory system are described. For example, a controller can be coupled to a plurality of memory device and a plurality of storage devices. The controller can receive signaling indicative of a memory request corresponding to execution of an application. Responsive to receiving the signaling indicative of the memory request, the controller can select a memory device or a storage device, or both, selecting from the plurality of memory devices or the plurality of storage devices, or both, to perform a memory operation associated with the memory request. Responsive to receiving the memory request and selecting the memory device or the storage device, or both, the controller can perform the memory operation using the selected memory device or the selected storage device, or both.

Abstract: A method includes writing a first codeword to a first set of contiguous partitions in a first memory die of a memory device. The method further includes writing a first portion of a second codeword to a second set of contiguous partitions in the first memory die of the memory device and writing a second portion of the second codeword to a first set of contiguous partitions in a second memory die of the memory device. The method also includes writing a third codewords to a second set of contiguous partitions in the second memory die of the memory device.

Abstract: Methods, systems, and devices for overwriting at a memory system are described. A memory system may be configured to overwrite portions of a memory array with new data, which may be associated with omitting an erase operation. For example, write operations may be performed in accordance with a first demarcation configuration to store information at a portion of a memory array. A portion of a memory system may then determine to overwrite the portion of the memory array with different or updated information, which may include performing write operations in accordance with a second demarcation configuration. The second demarcation configuration may be associated with different cell characteristics for a one or more logic states, such as different distributions of stored charge or other cell property, different demarcation characteristics, different write operations, among other differences, which may support performing an overwrite operation without first performing an erase operation.

Abstract: Methods, systems, and devices for status check using signaling are described. A memory system may receive ready signals from memory dies. The ready signal may indicate whether a memory die is available to receive a command. The memory system may generate an indicator of whether the memory die is available based on values of ready signals. The memory system may output the indicator to a controller over one or more pins based on generating the indicator.

Abstract: Systems, apparatuses, and methods related to configurable media structure are described. A memory device can be configured to boot up in a variety of configurations. The variety of configurations can include using the memory device for persistent memory storage, for non-persistent memory storage, etc. For instance, an apparatus can include a first memory array and a second memory array. The apparatus can include a memory controller coupled to the first memory array and the second memory array. The second memory array can be configured to store at least two boot images. The first memory array can be configured to operate based on which of the at least two boot images is used.

Abstract: Systems, apparatuses, and methods related to thermal leveling are described. Thermal leveling can be performed on a host computing system as opposed to on a memory system. Thermal leveling can include operations performed by a host to control temperature characteristics and/or power consumption of a memory system. For instance, a host computing system can control temperature characteristics of multiple memory devices that are deployed in a memory system. In an example, a set of processing resources (e.g., a thermal leveling component) can be provided on a host. The set of processing resources can receive information corresponding to thermal characteristics of a memory device coupled to the host and control a thermal setting for the memory device based on the received thermal characteristics.

Abstract: Methods, systems, and devices for identification and storage of boot information at a memory system are described to support transferring boot information to higher reliability memory storage. A memory system may identify boot information stored at a memory array based on a command received from a host system, which may identify the boot information for the memory system, or based on performing a boot procedure with the host system, in which the boot information may be requested from the memory system. After identifying the boot information stored at the memory array, the memory system may move or transfer the boot information from physical addresses associated with lower reliable memory storage to physical addresses associated with higher reliable memory storage.

Abstract: Systems, apparatuses, and methods related to managing memory objects are discussed. An example method can include monitoring a first characteristic set for each of a plurality of memory objects written to a first memory device or a second memory device; monitoring a second characteristic set for each of the plurality of memory objects; monitoring a performance characteristic set for the first memory device and the second memory device, wherein the first memory device and the second memory device comprise different types of memory media; and writing each of the plurality of memory objects in a particular respective location of the first memory device or the second memory device based, at least in part, upon the first characteristic set, the second characteristic set, and the performance characteristic set.

Abstract: Systems, apparatuses, and methods related to predictive memory management are described. Error correction operations can be performed on a memory system and can include a latency associated with performing various error correction techniques on data and the health of physical addresses used to store the data can be predicted based on that latency information. In an example, a method can include determining, by a controller, latency information corresponding to one or more error correction operations performed on data received by the controller, and assigning, based on the latency information corresponding to a health of physical address locations corresponding to the data, and taking an action involving the physical address locations based, at least in part, on the information corresponding to the health of the plurality of physical address locations corresponding to the data.

Abstract: Apparatuses and methods can be related power down workload estimations using artificial neural networks. Workload estimation can include predicting a duration of a subsequent power down event of the memory device. A quantity of maintenance operations to be performed on the memory device, may be predicted based on the predicted duration of the subsequent power down event, when the memory device is powered on after the subsequent power down event using an artificial neural network. The quantity of maintenance operations may be performed on the memory device prior to the subsequent power down event of the memory device.

Abstract: A method includes performing a first operation to program data to a group of memory cells of a memory device, wherein the data comprises host data and a bit pattern indicative of a first temperature of the group of memory cells and receiving a signal to perform a second operation to read the host data from the group of memory cells. The method further includes determining, responsive to receipt of the signal, whether a second temperature of the group of memory cells is outside a threshold temperature differential that is based on the bit pattern indicative of the first temperature of the group of memory cells, applying a voltage offset signal to the group of memory cells responsive to a determination that the second temperature of the group of memory cells is outside the threshold temperature differential, and performing the second operation to read the host data from the group of memory cells subsequent to application of the voltage offset signal to the group of memory cells.

Abstract: Systems, apparatuses, and methods related to host-based error correction are described. Error correction operations can be performed on a host computing system as opposed to on a memory system. For instance, data containing erroneous bits can be transferred from a memory system to a host computing system and error correction operations can be performed using circuitry resident on the host computing system. In an example, a method can include receiving, by a host computing system, data that comprises a plurality of uncorrected bits from a memory system coupleable to the host computing system, determining an acceptable error range for the data based at least in part on an application associated with the data, and performing, using error correction logic resident on the host computing system, an initial error correction operation on the data based at least in part on the acceptable error range.

Abstract: Methods, systems, and devices for overwriting at a memory system are described. A memory system may be configured to overwrite portions of a memory array with new data, which may be associated with omitting an erase operation. For example, write operations may be performed in accordance with a first demarcation configuration to store information at a portion of a memory array. A portion of a memory system may then determine to overwrite the portion of the memory array with different or updated information, which may include performing write operations in accordance with a second demarcation configuration. The second demarcation configuration may be associated with different cell characteristics for a one or more logic states, such as different distributions of stored charge or other cell property, different demarcation characteristics, different write operations, among other differences, which may support performing an overwrite operation without first performing an erase operation.

Abstract: A hybrid addressing scheme in which a maximum of three codeword groups are utilized across pairs of memory dice and/or access rows of the memory sub-system or memory device is provided. By controlling the arrangement of such codewords, it can be possible to group codewords such that disturb effects can be reduced. For example, codewords can be grouped in a symmetrical manner with respect to the memory dice of a memory device, which can allow for simplified codeword addressing.

Abstract: Methods, systems, and devices for status check using signaling are described. A memory system may receive ready signals from memory dies. The ready signal may indicate whether a memory die is available to receive a command. The memory system may generate an indicator of whether the memory die is available based on values of ready signals. The memory system may output the indicator to a controller over one or more pins based on generating the indicator.

Abstract: Methods, systems, and devices for overwriting at a memory system are described. A memory system may be configured to overwrite portions of a memory array with new data, which may be associated with omitting an erase operation. For example, write operations may be performed in accordance with a first demarcation configuration to store information at a portion of a memory array. A portion of a memory system may then determine to overwrite the portion of the memory array with different or updated information, which may include performing write operations in accordance with a second demarcation configuration. The second demarcation configuration may be associated with different cell characteristics for a one or more logic states, such as different distributions of stored charge or other cell property, different demarcation characteristics, different write operations, among other differences, which may support performing an overwrite operation without first performing an erase operation.

Abstract: A method for data sequence prediction and resource allocation includes determining, by a memory system, a plurality of resource parameters associated with operation of the memory system and determining respective time intervals associated with usage patterns corresponding to the memory system, the respective time intervals being associated with one or more sets of the plurality of resource parameters. The method further includes determining, using the plurality of resource parameters, one or more weights for hidden layers of a neural network for the respective time intervals associated with the usage patterns and allocating computing resources within the memory system for use in execution of workloads based on the determined one or more weights for hidden layers of the neural network.

Abstract: Methods, systems, and devices for overwriting at a memory system are described. A memory system may be configured to overwrite portions of a memory array with new data, which may be associated with omitting an erase operation. For example, write operations may be performed in accordance with a first demarcation configuration to store information at a portion of a memory array. A portion of a memory system may then determine to overwrite the portion of the memory array with different or updated information, which may include performing write operations in accordance with a second demarcation configuration. The second demarcation configuration may be associated with different cell characteristics for a one or more logic states, such as different distributions of stored charge or other cell property, different demarcation characteristics, different write operations, among other differences, which may support performing an overwrite operation without first performing an erase operation.

Abstract: Methods, systems, and devices for memory operations are described. A host system may obtain data for writing to a memory system. The host system may send, to the memory system, an indication that the data is to be written to the memory system, and the memory system may remove invalid data at the memory system until the memory system has sufficient resources to store the data. Based on the memory system having sufficient resources, the memory system may delay background operations at the memory system until the data has been written to the memory system. The memory system may also create a restore point based on the memory system having sufficient resources and receiving the data. In other examples, the removal of invalid data at the memory system may be delayed until after the data is written to the memory system.

Abstract: Methods, systems, and devices for dynamic status registers array are described. An apparatus may include one or more memory dice coupled with a data bus. The apparatus may further include a controller coupled with each of the memory dice via the data bus that is configured to transmit a first command associated with a first operation to a first memory die. The first command may assign an associated operation (e.g., the first operation) to a queue slot of a status bank that is associated with at least the first memory die. The controller may further transmit second command to the first memory die to request a status of the first operation. The controller may receive a status of the first operation via a channel (e.g., a first channel) of the data bus that is based on the assigned queue slot of the status bank.