Abstract: Generally, a computing system includes processing circuitry, such as one or more processors or other suitable components, and memory devices, such as chips or integrated circuits. The memory devices may be associated with thermal limits. Saving data in such a way that causes a thermal limit of the memory device to be exceeded may cause loss of stored data and/or device over-heating. As discussed herein, a memory controller associated with the processing circuitry may determine whether a thermal limit is expected to be exceeded for a current memory writing operation. When the thermal limit is expected to be exceeded, the memory controller may respond by modifying the memory operation in such a manner that the thermal limit is not exceeded, thereby improving operation of at least the memory device and/or memory controller.

Abstract: Systems, apparatuses, and methods related to thermal leveling are described. Thermal leveling can be performed on a host computing system as opposed to on a memory system. Thermal leveling can include operations performed by a host to control temperature characteristics and/or power consumption of a memory system. For instance, a host computing system can control temperature characteristics of multiple memory devices that are deployed in a memory system. In an example, a set of processing resources (e.g., a thermal leveling component) can be provided on a host. The set of processing resources can receive information corresponding to thermal characteristics of a memory device coupled to the host and control a thermal setting for the memory device based on the received thermal characteristics.

Abstract: Methods, apparatuses, and systems for error recovery in memory devices are described. A die-level redundancy scheme may be employed in which parity data associated with particular die may be stored. An example apparatus may include a printed circuit board that has memory devices each disposed on a planar surface of the printed circuit board. Each memory device may include two or more memory die, channels communicatively coupled the two or more memory die, and a memory controller communicatively coupled to the plurality of channels. The memory controller may deterministically maintain a die-level redundancy scheme via data transmission through the plurality of channels. The memory controller may also generate parity data associated with the two or more memory die in response to a data write event.

Abstract: Methods, apparatuses, and systems for error recovery in memory devices are described. A die-level redundancy scheme may be employed in which parity data associated with particular die may be stored. An example apparatus may include a printed circuit board and memory devices. Each memory device may be each disposed on a planar surface of the printed circuit board and may each include two or more memory die. The apparatus may also include multiple channels communicatively coupled to the two or more memory die and a memory controller. The memory controller may be communicatively coupled to the multiple channels and may deterministically maintain a redundancy scheme via data transmission through the multiple channels. The memory controller may also update memory operation information appended to the enhanced codeword in response to a memory operation request.

Abstract: Methods, apparatuses, and systems for error recovery in memory devices are described. A die-level redundancy scheme may be employed in which parity data associated with particular die may be stored. An example apparatus may include a printed circuit board that has memory devices each disposed on a planar surface of the printed circuit board. Each memory device may include two or more memory die, channels communicatively coupled the two or more memory die, and a memory controller communicatively coupled to the plurality of channels. The memory controller may deterministically maintain a die-level redundancy scheme via data transmission through the plurality of channels. The memory controller may also generate parity data associated with the two or more memory die in response to a data write event.