Abstract: An accessory mounting system for a work vehicle includes a first mount extending from a lateral side of a body of the work vehicle, in which the first mount is configured to couple to a first end of a rotatable component to rotatably couple the rotatable component to the body of the work vehicle. Further, the accessory mounting system for includes a cover assembly having a cover, in which the cover assembly is coupled to the lateral side of the body of the work vehicle, and at least a portion of the cover is positioned laterally outward from the first mount such that the first end of the rotatable component is disposed between the lateral side of the body of the work vehicle and the portion of the cover while the first end of the rotatable component is coupled to the first mount.

Abstract: An arm assembly for a work vehicle includes an arm configured to rotatably couple to a chassis of the work vehicle. The arm includes a substantially vertical portion, and the substantially vertical portion is configured to support an implement. The arm assembly also includes a lift actuator coupled to the arm and configured to couple to the chassis of the work vehicle. The lift actuator is configured to rotate the arm relative to the chassis to control a position of the implement along a vertical axis. In addition, the arm assembly includes a support actuator configured to couple to the chassis. The support actuator is configured to engage the substantially vertical portion of the arm to support the arm against a horizontal load applied to the arm by the implement.

Abstract: Encryption is provided for a wireless network comprising a first wireless station and at least a second wireless station. First messages are exchanged between the first wireless station and the second wireless station over a first synchronous wireless link to establish a shared secret and a first session key, the first messages not being encrypted. The MAC layer of the first synchronous wireless link is then encrypted using encryption on the basis of the first session key, then further messages are exchanged between the first wireless station and the second wireless station over the first synchronous wireless link to establish a second session key, the further messages being encrypted by the encryption of the MAC layer of the first synchronous wireless link. The MAC layer of the first synchronous wireless link is then encrypted using encryption on the basis of the second session key.

Abstract: A semiconductor device includes a plurality of NMOS transistor elements, each including a first gate electrode structure above a first active region, at least two of the plurality of first gate electrode structures including a first encapsulating stack having a first dielectric cap layer and a first sidewall spacer stack. The semiconductor device also includes a plurality of PMOS transistor elements, each including a second gate electrode structure above a second active region, wherein at least two of the plurality of second gate electrode structures include a second encapsulating stack having a second dielectric cap layer and a second sidewall spacer stack. Additionally, the first and second sidewall spacer stacks each include at least three dielectric material layers, wherein each of the three dielectric material layers of the first and second sidewall spacer stacks include the same dielectric material.

Abstract: A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and the switching current ramp are combined to form a combined switching current, which is applied to the row line of the memristive device. When a resistance of the memristive device reaches a target value, the combined switching current is removed from the row line.

Abstract: A ground cover for use as a containment barrier including a geomembrane sheet and a geotextile sheet bonded together by an adhesive layer positioned therebetween. The adhesive layer does not fully cure, remains tacky and has an adhesive strength sufficient to maintain a bond between the geomembrane sheet and the geotextile sheet under normal foot traffic and a release point allowing separation of the geomembrane sheet and the geotextile sheet under shear forces generated by heavier traffic.

Abstract: A referral management system can provide functionality of tracking referrals for professionals. The referral management system may, for instance, enable users to send and receive referrals. In certain embodiments, the referral management system may also enable users to track the status of sent and received cases. In other embodiments, the referral management system may enable users associated with the case to communicate with each other. The referral management system can also generate reports and derive data for suggestion to users.

Abstract: Disclosed herein are various embodiments of an improved metal gate structure for semiconductor devices, such as transistors. In one example disclosed herein, a transistor has a gate structure consisting of a gate insulation layer positioned on a semiconducting substrate, a high-k insulation layer positioned on the gate insulation layer, a layer of titanium nitride positioned on the high-k insulation layer, a layer of aluminum positioned on the layer of titanium nitride and a layer of polysilicon positioned on the layer of aluminum.

Abstract: A ground cover for use as a containment barrier including a geomembrane sheet and a geotextile sheet bonded together by an adhesive layer positioned therebetween. The adhesive layer does not fully cure, remains tacky and has an adhesive strength sufficient to maintain a bond between the geomembrane sheet and the geotextile sheet under normal foot traffic and a release point allowing separation of the geomembrane sheet and the geotextile sheet under shear forces generated by heavier traffic.

Abstract: A ground cover for use as a containment barrier including a geomembrane sheet and a geotextile sheet bonded together by an adhesive layer positioned therebetween. The adhesive layer does not fully cure, remains tacky and has an adhesive strength sufficient to maintain a bond between the geomembrane sheet and the geotextile sheet under normal foot traffic and a release point allowing separation of the geomembrane sheet and the geotextile sheet under shear forces generated by heavier traffic.

Abstract: When forming self-aligned contact elements in sophisticated semiconductor devices in which high-k metal gate electrode structures are to be provided on the basis of a replacement gate approach, the self-aligned contact openings are filled with an appropriate fill material, such as polysilicon, while the gate electrode structures are provided on the basis of a placeholder material that can be removed with high selectivity with respect to the sacrificial fill material. In this manner, the high-k metal gate electrode structures may be completed prior to actually filling the contact openings with an appropriate contact material after the removal of the sacrificial fill material. In one illustrative embodiment, the placeholder material of the gate electrode structures is provided in the form of a silicon/germanium material.

Abstract: When forming sophisticated semiconductor devices, a replacement gate approach may be applied in combination with a self-aligned contact regime by forming the self-aligned contacts prior to replacing the placeholder material of the gate electrode structures.

Abstract: Disclosed herein are various embodiments of an improved metal gate structure for semiconductor devices, such as transistors. In one example disclosed herein, a transistor has a gate structure consisting of a gate insulation layer positioned on a semiconducting substrate, a high-k insulation layer positioned on the gate insulation layer, a layer of titanium nitride positioned on the high-k insulation layer, a layer of aluminum positioned on the layer of titanium nitride and a layer of polysilicon positioned on the layer of aluminum.

Abstract: Disclosed herein are various methods of forming replacement gate structures and conductive contacts on semiconductor devices and devices incorporating the same. One exemplary device includes a plurality of gate structures positioned above a semiconducting substrate, at least one sidewall spacer positioned proximate respective sidewalls of the gate structures, and a metal silicide region in a source/drain region of the semiconducting substrate, the metal silicide region extending laterally so as to contact the sidewall spacer positioned proximate each of the gate structures.