Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Abstract: Embodiments of heating lamps and heating lamp assemblies are disclosed herein. In some embodiments, a heating lamp may include a bulb; a reflector circumscribing the bulb proximate a first end of the bulb; a base coupled to the reflector on a side opposite the bulb; a handle coupled to the base on a side opposite the reflector, wherein the handle comprises a body having a first end coupled to the base and an opposing second end; a first conductor extending from the bulb and through the base and the handle in a direction opposite the bulb; and a second conductor extending from the bulb and through the base and the handle in a direction opposite the bulb.

Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Abstract: An insulating composite panel (ICP) 100, has an initial thermal resistance (R value) greater than about 50 ft2·° F.·h/Btu (8.8 K·m2/W) at a thickness less than 2.0 in (51 mm). The ICP is preassembled with a vacuum insulation panel (VIP) 102 protected by a lower rigid cover board 104 adhered to a lower surface of the VIP by a lower grid of adhesive ribbons 108, and by an upper rigid cover board 106 adhered to an upper surface of the VIP by an upper grid of adhesive ribbons 110. Each of the adhesive grids 108, 110 is augmented by a respective continuous ribbon of adhesive 112, 114 along the entire perimeter of each respective interface between the VIP 102 and each respective cover board 104, 106. The ICP has high resistance to wind uplift, mold, and fire, and low mass per unit area.

Abstract: Embodiments described herein generally relate to an apparatus for aligning a preheat member. In one embodiment, an alignment assembly is provided for a processing chamber. The alignment assembly includes a lower liner, a preheat member; an alignment mechanism formed on a bottom surface of the preheat member; and an elongated groove formed in a top surface of the lower liner and configured to engage with the alignment mechanism.

Abstract: An insulating composite panel (ICP) 100, has an initial thermal resistance (R value) greater than about 50 ft2·° F.·h/Btu (8.8 K·m2/W) at a thickness less than 2.0 in (51 mm). The ICP is preassembled with a vacuum insulation panel (VIP) 102 protected by a lower rigid cover board 104 adhered to a lower surface of the VIP by a lower grid of adhesive ribbons 108, and by an upper rigid cover board 106 adhered to an upper surface of the VIP by an upper grid of adhesive ribbons 110. Each of the adhesive grids 108, 110 is augmented by a respective continuous ribbon of adhesive 112, 114 along the entire perimeter of each respective interface between the VIP 102 and each respective cover board 104, 106. The ICP has high resistance to wind uplift, mold, and fire, and low mass per unit area.

Abstract: A taper assembly includes a taper housing comprising a coaxial conical shaped opening converging into a cylindrically shaped opening. A rotation housing is coupled to the taper housing by a coupling member. The rotation housing comprises a plurality of vent holes configured to vent gas through the taper assembly. A susceptor support assembly includes a central shaft having a base with a tapered bottom, a susceptor support, and a susceptor. The susceptor support includes a plurality of arms extending outwardly from the central shaft, wherein the central shaft extends through a central opening in the susceptor support. The plurality of arms are configured to house a plurality of balls in indentations in the arms. The susceptor includes a disk-shaped body having a plurality of grooves at an edge of the body. The plurality of grooves are configured to contact the plurality of balls at two or more contact points.

Abstract: Embodiments of heating lamps and heating lamp assemblies are disclosed herein. In some embodiments, a heating lamp may include a bulb; a reflector circumscribing the bulb proximate a first end of the bulb; a base coupled to the reflector on a side opposite the bulb; a handle coupled to the base on a side opposite the reflector, wherein the handle comprises a body having a first end coupled to the base and an opposing second end; a first conductor extending from the bulb and through the base and the handle in a direction opposite the bulb; and a second conductor extending from the bulb and through the base and the handle in a direction opposite the bulb.

Abstract: A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.

Abstract: A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

Abstract: Methods and apparatus for processing a substrate are provided herein.

Abstract: Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

Abstract: An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate support and the lift pins and provides rotation for the substrate support. The lift mechanism includes at least one sensor capable of generating a signal when clearance between the substrate support and the lift pins allows rotation of the substrate support to begin. The substrate support capable of concurrent axial motion and rotation may be used in a processing chamber comprising multiple processing zones separated by edge rings. Substrates may be subjected to successive or cyclical processes by moving between the multiple processing zones.

Abstract: A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

Abstract: A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.