Patents by Inventor Richard P. Schneider

Richard P. Schneider has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210066550
    Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
    Type: Application
    Filed: September 24, 2020
    Publication date: March 4, 2021
    Inventors: Fariba DANESH, Tsun LAU, Richard P. SCHNEIDER, JR., Michael JANSEN, Max BATRES
  • Publication number: 20200403121
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 24, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10804436
    Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: October 13, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Tsun Lau, Richard P. Schneider, Jr., Michael Jansen, Max Batres
  • Patent number: 10797202
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: October 6, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20200274029
    Abstract: A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.
    Type: Application
    Filed: April 10, 2019
    Publication date: August 27, 2020
    Inventors: Richard P. Schneider, JR., Benjamin Leung, Fariba Danesh, Zulal Tezcan Ozel, Miao-Chan Tsai
  • Publication number: 20200119229
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10566499
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: February 18, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20190341525
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: July 16, 2019
    Publication date: November 7, 2019
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10418499
    Abstract: A light emitting device, such as an LED, is formed by forming clusters of semiconductor nanostructures separated by inter-cluster regions that lack semiconductor nanostructures over a substrate, where each semiconductor nanostructure includes a nanostructure core having a doping of a first conductivity type and an active shell formed around the nanostructure core, and selectively depositing a second conductivity type semiconductor material layer having a doping of a second conductivity type on the clusters of semiconductor nanostructures. Portions of the selectively deposited second conductivity type semiconductor material layer form a continuous material layer in each cluster of semiconductor nanostructures, and the second conductivity type semiconductor material layer is not deposited in the inter-cluster regions.
    Type: Grant
    Filed: June 1, 2017
    Date of Patent: September 17, 2019
    Assignee: GLO AB
    Inventors: Richard P. Schneider, Benjamin Leung
  • Patent number: 10361341
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: July 23, 2019
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20190109262
    Abstract: A method of forming a light emitting device includes forming a semiconductor light emitting diode, forming a metal layer stack including a first metal layer and a second metal layer on the light emitting diode, and oxidizing the metal layer stack to form transparent conductive layer including at least one conductive metal oxide.
    Type: Application
    Filed: October 5, 2018
    Publication date: April 11, 2019
    Inventors: Fariba DANESH, Tsun LAU, Richard P. SCHNEIDER, JR., Michael JANSEN
  • Publication number: 20180351017
    Abstract: A light emitting device, such as an LED, is formed by forming clusters of semiconductor nanostructures separated by inter-cluster regions that lack semiconductor nanostructures over a substrate, where each semiconductor nanostructure includes a nanostructure core having a doping of a first conductivity type and an active shell formed around the nanostructure core, and selectively depositing a second conductivity type semiconductor material layer having a doping of a second conductivity type on the clusters of semiconductor nanostructures. Portions of the selectively deposited second conductivity type semiconductor material layer form a continuous material layer in each cluster of semiconductor nanostructures, and the second conductivity type semiconductor material layer is not deposited in the inter-cluster regions.
    Type: Application
    Filed: June 1, 2017
    Publication date: December 6, 2018
    Inventors: Richard P. SCHNEIDER, JR., Benjamin LEUNG
  • Publication number: 20180280177
    Abstract: Certain configurations of methods of using removable oral devices are described. In some examples, a removable oral device can be used in weight loss, weight management, athletic performance or in other applications to monitor or alter a user's behavior or monitor one or more physiological conditions. If desired, the removable oral device can be used in combination with a storage case, a mobile device, application software or other components.
    Type: Application
    Filed: September 12, 2017
    Publication date: October 4, 2018
    Inventors: William H. Longley, Richard P. Schneider, Anthony R. Tremaglio, Marc M. Gibeley
  • Publication number: 20180280125
    Abstract: Certain configurations of methods which can be used to produce removable oral devices are described. In some instances, the removable oral devices can be produced using molding, digital scanning, on demand printing and/or other processes. In certain examples, the produced removable oral device can be used in weight management, athletic performance or in other applications.
    Type: Application
    Filed: September 12, 2017
    Publication date: October 4, 2018
    Inventors: William H. Longley, Richard P. Schneider, Anthony R. Tremaglio, Marc M. Gibeley
  • Publication number: 20180280176
    Abstract: Certain configurations of removable oral devices are described. In some instances, the removable oral device includes a palatal element. In certain configurations, the palatal element may comprise a variable hardness at different areas, e.g., edges can be softer than other areas of the removable oral device. In other instances, the removable oral device may comprise two or more individual palatal elements which together can form the palatal element and permit user adjustment of the oral volume. Various materials used in the palatal element are described. Sensors and other on-board devices are also described.
    Type: Application
    Filed: September 12, 2017
    Publication date: October 4, 2018
    Inventors: William H. Longley, Richard P. Schneider, Anthony R. Tremaglio, Marc M. Gibeley
  • Patent number: 10012797
    Abstract: A semiconductor monolithic transmitter photonic integrated circuit (TxPIC) comprises two different situations, either at least one signal channel in the PIC having a modulated source with the channel also extended to include at least one additional element or a plurality of modulated sources comprising N signal channels in the PIC of different transmission wavelengths, where N is equal to or greater than two (2), which may also approximate emission wavelengths along a standardized wavelength grid. In these two different situations, a common active region for such modulated sources and additional channel elements is identified as an extended identical active layer (EIAL), as it extends from a single modulated source to such additional channel elements in the same channel and/or extends to additional modulated sources in separate channels where the number of such channels is N equal to two or greater.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: July 3, 2018
    Assignee: Infinera Corporation
    Inventors: Radhakrishnan L. Nagarajan, Fred A. Kish, Jr., Masaki Kato, Charles H. Joyner, David F. Welch, Randal A. Salvatore, Richard P. Schneider, Mehrdad Ziari, Damien Jean Henri Lambert, Sheila K. Hurtt, Andrew G. Dentai, Atul Mathur, Vincent G. Dominic
  • Patent number: 9978808
    Abstract: A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.
    Type: Grant
    Filed: May 3, 2017
    Date of Patent: May 22, 2018
    Assignee: GLO AB
    Inventors: Richard P. Schneider, Jr., Benjamin Leung
  • Publication number: 20180114878
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: October 18, 2017
    Publication date: April 26, 2018
    Inventors: Fariba DANESH, Richard P. SCHNEIDER, JR., Fan REN, Michael JANSEN, Nathan GARDNER
  • Publication number: 20170323925
    Abstract: A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.
    Type: Application
    Filed: May 3, 2017
    Publication date: November 9, 2017
    Inventors: Richard P. SCHNEIDER, JR., Benjamin LEUNG
  • Patent number: 9372306
    Abstract: A method provides acceptable performance from a semiconductor transmitter photonic integrated circuit (TxPIC) that contains a plurality of modulated sources each comprising a laser source and an external modulator where each laser source provides a different emission wavelength and each modulated source forms a separate signal channel, comprising the steps of providing at least some of the signal channels with an extended identical active layer (EIAL) so that the modulated sources each have an identical active region wavelength and detuning the laser emission wavelength in each laser source within the EIAL from the laser active region wavelength.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: June 21, 2016
    Assignee: Infinera Corporation
    Inventors: Radhakrishnan L. Nagarajan, Fred A. Kish, Jr., Masaki Kato, Charles H. Joyner, David F. Welch, Randal A. Salvatore, Richard P. Schneider, Mehrdad Ziari, Damien Jean Henri Lambert, Sheila K. Hurtt, Andrew G. Dentai, Atul Mathur, Vincent G. Dominic