Abstract: A resist underlayer film forming composition for lithography that can be used as a hard mask. The composition can improve pattern resolution due to having a trihalogenoacetamide skeleton. A resist underlayer film forming composition for lithography comprising a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane comprises a silane having a halogen-containing carboxylic acid amide group.

Abstract: An overlay film-forming composition used to cause phase separation to a block copolymer-containing layer formed on a substrate, the composition including: (A) a copolymer that includes (a) a unit structure derived from maleimide structure and a unit structure derived from styrene structure; and (B) an ether compound having 8-16 carbon atoms as a solvent. The overlay film-forming composition exhibits good solubility with respect to a hydrophobic solvent, and is able to induce vertical alignment of a block copolymer without causing dissolution, swelling, and the like of the block copolymer-containing layer formed on the substrate.

Abstract: A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of the following Formula (1) to Formula (3), a crosslinking agent, an organic acid catalyst, and a solvent: (wherein R1s are independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protective group, R3 is an organic group having a 4-membered ring to 7-membered ring lactone framework, adamantane framework, tricyclodecane framework or norbornane framework, R4 is a linear, branched or cyclic organic group having a carbon atom number of 1 to 12 in which at least one hydrogen atom is substituted with a fluoro group and which optionally has at least one hydroxy group as a substituent).

Abstract: A material to form a resist underlayer film having properties achieving heat resistance, flattening properties, and etching resistance through lithography. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): (wherein R1 is an organic group having at least two amines and at least three C6-40 aromatic rings, R2 and R3 are each a hydrogen atom, a C1-10 alkyl group, a C6-40 aryl group, a heterocyclic group, or a combination thereof, and the alkyl group, the aryl group, and the heterocyclic group are optionally substituted with a halogen group, a nitro group, an amino group, a formyl group, an alkoxy group, or a hydroxy group, or R2 and R3 optionally form a ring together). The above mentioned composition t, wherein R1 is a divalent organic group derived from N,N?-diphenyl-1,4-phenylenediamine.

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40.

Abstract: A composition for forming a resist underlayer film has excellent storage stability at normal temperature. A composition for forming a resist underlayer film for lithography including a nitrogen-containing compound having 2 to 6 substituents of the following Formula (1) which bond to nitrogen atoms in one molecule, a polymer, a compound that promotes a crosslinking reaction, and an organic solvent. The nitrogen-containing compound having 2 to 6 substituents of Formula (1) in one molecule is for example a glycoluril derivative of the following Formula (1A). In the formula, each R1 is a methyl group or an ethyl group, and R2 and R3 are independently a hydrogen atom, a C1-4 alkyl group, or phenyl group.

Abstract: A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. A resist underlayer film-forming composition for lithography includes a polymer (A) including a unit structure of Formula (1) and a unit structure of Formula (2); a crosslinkable compound (B) having at least two groups selected from blocked isocyanate groups, methylol group, or C1-5 alkoxy methyl groups; and a solvent (C), characterized in that the polymer (A) is a polymer in which the unit structure of Formula (1) and the unit structure of Formula (2) are copolymerized in a mol % ratio of the unit structure of Formula (1):the unit structure of Formula (2)=25 to 60:75 to 40.

Abstract: An electron beam resist underlayer film-forming composition includes a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxy group. The polymer may be a polymer obtained by copolymerizing a monomer mixture containing a lactone (meth)acrylate, a hydroxyalkyl (meth)acrylate, and phenyl (meth)acrylate or benzyl (meth)acrylate. A method for producing a semiconductor device including: applying the electron beam resist underlayer film-forming composition onto a substrate and heating the applied composition to form an electron beam resist underlayer film; coating the electron beam resist underlayer film with an electron beam resist; irradiating the substrate coated with the electron beam resist underlayer film and the electron beam resist with an electron beam; developing the substrate; and transferring an image onto the substrate by dry etching to form an integrated circuit element.

Abstract: A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

Abstract: There is provided a composition for forming an underlayer film used for an underlayer of a self-organizing film. An underlayer film-forming composition of a self-organizing film, the underlayer film-forming composition including a polymer made of a unit structure derived from an optionally substituted styrene and a unit structure derived from a crosslink forming group-containing compound, the polymer containing 60 mol % to 95 mol % of the unit structure derived from the styrene and 5 mol % to 40 mol % of the unit structure derived from the crosslink forming group-containing compound relative to the whole unit structures of the polymer. The crosslink forming group is a hydroxy group, an epoxy group, a protected hydroxy group, or a protected carboxy group. The crosslink forming group-containing compound is hydroxyethyl methacrylate, hydroxyethyl acrylate, hydroxypropyl methacrylate, hydroxypropyl acrylate, hydroxystyrene, acrylic acid, methacrylic acid, glycidyl methacrylate, or glycidyl acrylate.

Abstract: A method for roughening a surface of a substrate, including: applying a composition containing inorganic particles and organic resin to the surface of the substrate and drying and curing the composition to form an organic resin layer; and etching the substrate by a solution containing hydrogen fluoride, hydrogen peroxide, or an acid, to roughen the surface. Preferably, the solution contains hydrogen fluoride and ammonium fluoride or hydrogen peroxide and ammonia, the resin layer contains a ratio of the particles to the resin of 5 to 50 parts by mass to 100 parts by mass, and the composition is a mixture of silica sol wherein silica is dispersed as the inorganic particles in organic solvent or titanium oxide sol wherein titanium oxide is dispersed, with a solution of the organic resin. The method is applied to a light extraction layer of an LED or a low-reflective glass of a solar cell.

Abstract: There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a tert-butoxycarbonyl group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.

Abstract: A stepped substrate coating composition includes: a compound (E) containing partial structures (I) and (II) and a solvent (F). The partial structure (II) contains a hydroxy group generated by an epoxy group and a proton-generating compound reaction; the partial structure (I) is at least one partial structure selected from partial structures of Formula (1-1) to Formula (1-5) or a partial structure combining a partial structure of Formula (1-6) and Formula (1-7) or Formula (1-8); and the partial structure (II) is a partial structure of Formula (2-1) or Formula (2-2). The photocurable stepped substrate coating composition wherein in the compound (E), the epoxy group and the hydroxy group are contained in a molar ratio of 0?(Epoxy group)/(Hydroxy group)?0.5 and the partial structure (II) is contained in a molar ratio of 0.01?(Partial structure (II))/(Partial structure (I)+Partial structure (II))?0.8.

Abstract: The present invention provides a novel resist underlayer film-forming composition capable of forming a resist underlayer film that has etching resistance and excellent embeddability in a surface having concave portions and/or convex portions. A resist underlayer film-forming composition comprising a polymer having a structural unit represented by formula (1) or formula (2): (wherein X is an arylene group, n is 1 or 2, and R1, R2, R3, and R4 are each independently a hydrogen atom, a hydroxy group, a C1-3 alkyl group, or a phenyl group), and a solvent.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

Abstract: A resin composition for pattern reversal can be embedded between traces of the pattern of a stepped substrate formed on the substrate to be processed and can form a smooth film. A polysiloxane composition for coating used in the steps of forming an organic underlayer film on a semiconductor substrate, applying a silicon hard mask-forming composition onto the underlayer film and baking the applied silicon hard mask-forming composition to form a silicon hard mask, applying a resist composition onto the silicon mask to form a resist film, exposing the resist film to light and developing the resist film after exposure to give a resist pattern, etching the silicon mask, etching the underlayer film, applying the polysiloxane composition for coating onto the patterned organic underlayer film to expose an upper surface of the underlayer film by etch back, and etching the underlayer film to reverse the pattern.

Abstract: There is provided a new coating liquid for resist pattern coating.

Abstract: A resist underlayer film-forming composition comprising a novolac resin obtained by reacting an aromatic compound (A) with an aldehyde (B) having formyl group bonded to a secondary carbon atom or tertiary carbon atom of a C2-26 alkyl group. A resist underlayer film-forming composition according to the first aspect, in which the novolac resin comprises a unit structure of Formula (1): (in Formula (1), A is a bivalence group derived from a C6-40 aromatic compound; b1 is a C1-16 alkyl group; and b2 is a hydrogen atom or a C1-9 alkyl group). A is the bivalent group derived from an aromatic compound comprising an amino group, a hydroxy group, or both an amino group and a hydroxy group.

Abstract: The present invention provides a resist underlayer film that has a wide focus position range within which a good resist shape can be obtained. A resist underlayer film-forming composition for lithography comprising a linear polymer that is obtained by a reaction of a diepoxy group-containing compound (A) with a dicarboxyl group-containing compound (B). The linear polymer has structures of the following formulae (1), (2), and (3) derived from the diepoxy group-containing compound (A) or the dicarboxyl group-containing compound (B): The linear polymer preferably contains a polymer obtained by a reaction of two diepoxy group-containing compounds (A) each having structures of Formulae (1) and (2) with a dicarboxyl group-containing compound (B) having a structure of Formula (3), or a polymer obtained by a reaction of a diepoxy group-containing compound (A) having a structure of Formula (1) with two dicarboxyl group-containing compounds (B) each having structures of Formulae (2) and (3).

Abstract: A resist underlayer film-forming composition for lithography having an aliphatic polycyclic structure including, as a silane, a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a combination thereof, in which the aliphatic polycyclic structure is a structure which a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4-(a+b)??Formula (1) (where R1 is an organic group having an aliphatic polycyclic structure and bonded to a Si atom through a Si—C bond; R3 is an ethoxy group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3) has, or a structure included in a compound added as an aliphatic polycyclic compound, an aliphatic polycyclic dicarboxylic acid, or an aliphatic polycyclic dicarboxylic acid anhydride, each optionally having a double bond, a hydroxy group, or an epoxy group.