Abstract: A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.

Abstract: An integrated micropump or a plurality of integrated micropumps are communicated to a plurality of analysis chambers. A plurality of integrated analysis chambers include integrated analysis devices to test a fluid for an analyte. The micropumps continuously or periodically pump the fluid into the analysis chambers and flush the analysis chambers after analysis of the analyte. In one embodiment, the analysis device comprises an integrated LED and an integrated optical detector. The LED and detector are tuned to an optical absorption line of the analyte. The micropumps are composed of nitrides of B, Al, Ga, In, Tl or combinations thereof and fabricated using photoelectrochemical techniques. The analysis chambers, and micropumps including the analysis devices are simultaneously fabricated during which fabrication of the micropumps and the analysis devices are masked from the photoelectrochemical techniques.

Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable operating with at least two wireless local area subnetworks occupying common physical space. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.

Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable of operating based on a pre-assigned security level. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.

Abstract: A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimensions than the remainder of the fingers. The tapered finger design balances current flow in the electrode fingers to reduce device resistance while permitting a more compact construction.

Abstract: A III-nitride power semiconductor device that includes a gate barrier under the gate thereof, and a method for fabricating the device.

Abstract: An access point for a wireless local area data communications network is designed to derive power from a lighting fixture. In one arrangement, the access point includes a housing configured to be received in one or more sockets of a lighting fixture and to replace a lamp which would be inserted therein. In another arrangement, the housing includes a socket for receiving a lamp whereby both the access point and a lighting fixture can be serviced by the socket of the lighting fixture.

Abstract: A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to reduce stresses and prevent cracking.

Abstract: III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.

Abstract: A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

Abstract: III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.

Abstract: A wireless data communication system has a first station or mobile unit is linked to a second station configured as an access unit to support packet communication, voice or data, where the voice packets are transmitted in the Continuously Aware Mode (CAM) mode while other packets are buffered by the access point and held until asked for by the first station when in a Power Saving-Poll (PSP) mode. A monitoring apparatus at the access point monitors all transmitted packets and sorts the packets to the mobile unit according to CAM or PSP mode. Voice packets are sent out immediately to the mobile unit. Other packets are stored at the access point. The packet arrival rate may vary during transmission and due to random packet delays introduced by propagation characteristic and processing apparatus. The packet arrival rate and delays are taken into account by the first station in an algorithm to determine and extend the normal safe period in which the station receiver may be powered off.

Abstract: A temperature resistant photomask is disclosed which is made from photoresist containing Si, which is exposed to oxygen during Reactive Ion Etching. The temperature resistant photomask may include a secondary mask layer, which may also acts as a release layer, and which may include spin-on polymide. The photoresist containing Si may be exposed to oxygen during Reactive Ion Etching by introducing oxygen and carbon dioxide.

Abstract: A method is disclosed for fabricating a CPP read head for a magnetic disk drive having an electrical isolation layer. The method includes providing a first shield layer, depositing a sensor stack on the first shield layer, a CMP stop layer is deposited on the sensor stack, and a release layer is deposited a on the CMP stop layer. Photoresist material containing Si is deposited on the release layer, and the photoresist material is then patterned and then oxidized by Reactive Ion Etching to form a high temperature photomask. The electrical isolation layer is then deposited to surround the sensor stack using a high temperature deposition process. The read head is then continued as either an in-stack bias sensor with ‘draped shield’ variation, or a hard bias stabilization variation.

Abstract: Techniques are provided for frequency coordination among two different wireless network protocols, such as the IEEE 802.11 and Bluetooth protocols, operating in proximity with one another. Coordination is accomplished by the use of a first radio transceiver operating in accordance with a first communication protocol (which may be the 802.11 protocol) and using a frequency band (which may be the 2.4 GHz band), a base station connected to a wired network and operating in accordance with the first communication protocol, a second radio transceiver operating in accordance with a second communication protocol (which may be the Bluetooth protocol) and using the frequency band, and a coordinator associated with the base station for, in turn, activating the first radio transceiver, deactivating the first radio transceiver, activating the second radio transceiver, and deactivating the second radio transceiver.

Abstract: The present invention relates to an improved portable shopping system. The system is provided with improved data presentation system for presenting customer desired data on a portable terminal. The portable terminal includes audio as well as video presentation means which are used to provide customer specific marketing files to promote the sale of identified items.

Abstract: A III-nitride power semiconductor device that includes a field relaxation feature to relax the electric fields around the gate thereof to improve the breakdown voltage of the device.

Abstract: A wafer-level shunt is incorporated into a sensor design. The sensor is formed with two shields. When the ABS is etched into the slider, this region of the ABS is recessed to form a deep etch region. A top of the shunt is centered in this region and a bottom of the shunt is located therebelow. The two shields form the sensor leads and are electrically connected to the shunt. The shunt is fabricated by depositing and plating a shield one seed layer, and plating a shield one bar for the shunt. A protection layer protects the seed between shield one and the shield one shunt material. Some of the material is deposited, milled, and refilled with insulation. The unmilled material remains as the sensor and the deep etch shunt. Shield two is deposited and connects to the top of the deep etch shunt. A metallic lead connection is located between the two shields to short the shield two shunt material to shield two of the sensor.

Abstract: The present invention relates to an improved order fulfillment system. The system is provided with improved data entry system for selecting items for purchase by a customer, and an improved item collection terminal and order delivery system. The portable terminal to be used for collecting of items is provided with an audio as well as video presentation means which are used to provide assistance to the to terminal user.

Abstract: Techniques are provided for frequency coordination among two different wireless network protocols, such as the IEEE 802.11 and Bluetooth protocols, operating in proximity with one another. Coordination is accomplished by the use of a first radio transceiver operating in accordance with a first communication protocol (which may be the 802.11 protocol) and using a frequency band (which may be the 2.4 GHz band), a base station connected to a wired network and operating in accordance with the first communication protocol, a second radio transceiver operating in accordance with a second communication protocol (which may be the Bluetooth protocol) and using the frequency band, and a coordinator associated with the base station for, in turn, activating the first radio transceiver, deactivating the first radio transceiver, activating the second radio transceiver, and deactivating the second radio transceiver.