Abstract: Techniques are provided for communicating information between a wireless client device (CD) and an infrastructure device (ID) in a WLAN in which the CD wirelessly communicates with the ID in IBSS mode over a pseudo-BSS/IBSS air interface. The CD includes a WLAN NIC that operates in IBSS mode and a client host system that includes a client custom driver module (CCDM) and a WLAN NIC driver module configured to operate in IBSS mode. The ID includes a hardware interface and a host system which includes a packet separation driver module (PSDM) and an infrastructure custom driver module (ICDM). The CD operates in pseudo-BSS/IBSS mode (PBIM). The CCDM provides pseudo BSS-like service(s) with respect to packets generated by upper protocol layer modules to generate pseudo-BSS-like packets that it provides to the WLAN NIC via WLAN NIC driver module. Based on the pseudo-BSS-like packets, the WLAN NIC generates PBIM packets and transmits them. The PSDM receives packets from the hardware interface and separates them.

Abstract: Techniques are provided for communicating information between a wireless client device (CD) and an infrastructure device (ID) in a WLAN in which the CD wirelessly communicates with the ID in IBSS mode over a pseudo-BSS/IBSS air interface. The CD includes a WLAN NIC that operates in IBSS mode and a client host system that includes a client custom driver module (CCDM) and a WLAN NIC driver module configured to operate in IBSS mode. The ID includes a hardware interface and a host system which includes a packet separation driver module (PSDM) and an infrastructure custom driver module (ICDM). The CD operates in pseudo-BSS/IBSS mode (PBIM). The CCDM provides pseudo BSS-like service(s) with respect to packets generated by upper protocol layer modules to generate pseudo-BSS-like packets that it provides to the WLAN NIC via WLAN NIC driver module. Based on the pseudo-BSS-like packets, the WLAN NIC generates PBIM packets and transmits them. The PSDM receives packets from the hardware interface and separates them.

Abstract: Techniques are provided for communicating information between a wireless client device (CD) and an infrastructure device (ID) in a WLAN in which the CD wirelessly communicates with the ID in IBSS mode over a pseudo-BSS/IBSS air interface. The CD includes a WLAN NIC that operates in IBSS mode and a client host system that includes a client custom driver module (CCDM) and a WLAN NIC driver module configured to operate in IBSS mode. The ID includes a hardware interface and a host system which includes a packet separation driver module (PSDM) and an infrastructure custom driver module (ICDM). The CD operates in pseudo-BSS/IBSS mode (PBIM). The CCDM provides pseudo BSS-like service(s) with respect to packets generated by upper protocol layer modules to generate pseudo-BSS-like packets that it provides to the WLAN NIC via WLAN NIC driver module. Based on the pseudo-BSS-like packets, the WLAN NIC generates PBIM packets and transmits them. The PSDM receives packets from the hardware interface and separates them.

Abstract: A photocathode, for generating electrons in response to incident photons in a photodetector, includes a base layer having a first lattice structure and an active layer having a second lattice structure and epitaxially formed on the base layer, the first and second lattice structures being sufficiently different to create a strain in the active layer with a corresponding piezoelectrically induced polarization field in the active layer, the active layer having a band gap energy corresponding to a desired photon energy.

Abstract: A III-nitride based integrated semiconductor device which includes at least two III-nitride based semiconductor devices formed in a common die.

Abstract: A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device.

Abstract: A power semiconductor device that includes common conduction regions, charge compensation regions, each adjacent a respective common conduction region, and a stand off region over the common conduction regions and charge compensation regions.

Abstract: A semiconductor device composed of III-nitride materials is produced with epitaxial growth that permits vertical and lateral growth geometries to improve device characteristics. The resulting device has a greater breakdown voltage due to the greater integrity of the semiconductor material structure since no ion implantation processes are used. The epitaxially grown layers also exhibit greater thermal conductivity for improved operation with power semiconductor devices. The device may include a laterally grown charge compensated area to form a superjunction device. The resulting device may be bidirectional and have improved breakdown voltage in addition to higher current capacity for a given voltage rating.

Abstract: A wireless local area network for digital radio communication between remote devices and a PBX telephone system, wherein the remote devices can access and use the voice message features in the PBX and the data bases on a host computer and servers. A wireless phone is provided for voice and data communication through the PBX or a CO telephone line with remote locations or the Internet using digital data packets and standard Internet Protocol. In a preferred embodiment of the invention, the remote device is a cash register comprising a bar code scanner and a phone. Radio communication between the register and a host computer is carried out over two channels, a first channel for data communication and a second channel for voice communication.

Abstract: A wireless local area network audio and video communication system with mobile units is provided, wherein mobile units are operated in a power saving mode and become active at selected intervals corresponding to the duration of audio and video signals forming audio and video data packets. In a preferred arrangement the mobile units have a digital signal processor that operates at different clock rates during different portions of the intervals.

Abstract: A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device.

Abstract: A III-nitride bidirectional switch which includes an AlGaN/GaN interface that obtains a high current currying channel. The bidirectional switch operates with at least one gate that prevents or permits the establishment of a two dimensional electron gas to form the current carrying channel for the bidirectional switch.

Abstract: A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.

Abstract: A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.

Abstract: A wireless data communication system has a first station or mobile unit is linked to a second station configured as an access unit to support packet communication, voice or data, where the voice packets are transmitted in the Continuously Aware Mode (CAM) mode while other packets are buffered by the access point and held until asked for by the first station when in a Power Saving-Poll (PSP) mode. A monitoring apparatus at the access point monitors all transmitted packets and sorts the packets to the mobile unit according to CAM or PSP mode. Voice packets are sent out immediately to the mobile unit. Other packets are stored at the access point. The packet arrival rate may vary during transmission and due to random packet delays introduced by propagation characteristic and processing apparatus. The packet arrival rate and delays are taken into account by the first station in an algorithm to determine and extend the normal safe period in which the station receiver may be powered off.

Abstract: A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.

Abstract: Described is a system and method for power conservation in a wireless device. The method includes switching, by a wireless computing unit, from a first communication mode to a second communication mode at a predefined time interval. The unit receives wireless signals only when in the second communication mode, and the first communication mode is a power-save mode. The unit then receives a wireless signal, and initiates a wireless connection to a wireless arrangement to obtain traffic data from the wireless arrangement when the signal includes a traffic data indicator which is indicative of existence of the traffic data. The unit switches into the first communication mode when the indicator is absent from the signal.

Abstract: A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.

Abstract: A III-nitride power semiconductor device that includes a heterojunction body with a sloping portion, a first power electrode, a second power electrode and a gate over the sloping portion of the heterojunction to control the conduction of current between the first power electrode and the second power electrode of the HI-nitride power semiconductor device.

Abstract: A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimensions than the remainder of the fingers. The tapered finger design balances current flow in the electrode fingers to reduce device resistance while permitting a more compact construction.