Abstract: Integrated circuit structures having links for uniform grid metal gate and trench contact cut are described. For example, an integrated circuit structure includes a gate electrode over a vertical stack of horizontal nanowires or a fin. A conductive trench contact is adjacent to the gate electrode, with a dielectric sidewall spacer there between. First and second parallel dielectric cut plug structures extend through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact. A first conductive link is in a recess of the first dielectric cut plug structure and is in contact with a side of the gate electrode. A second conductive link is in a recess of the second dielectric cut plug structure and is in contact with a side of the conductive trench contact.

Abstract: Metal lines are formed through serial DSA processes. A first DSA process may define a pattern of first hard masks. First metal lines are fabricated based on the first hard masks. A metal cut crossing one or more first metal lines may be formed. A width of the metal cut is no greater than a pitch of the first metal lines. After the metal cut is formed, a second DSA process is performed to define a pattern of second hard masks. Edges of a second hard mask may align with edges of a first metal line. An insulator may be formed around a second hard mask to form an insulative structure. An axis of the insulative structure may be aligned with an axis of a first metal line. Second metal lines are formed based on the second hard masks and have a greater height than the first metal lines.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor structure with a substantially straight contact profile and methods of manufacture. The structure includes a block material comprising an upper oxidized layer at an interface with an insulating material; and an interconnect contact structure with a substantially straight profile through the oxidized layer of the block material.

Abstract: A sampling device for taking samples from a gaseous beverage under pressure includes a connection for a beverage line, a pump having a pump chamber, a particle filter, a discharging opening for a beverage sample, an outlet for waste, a control device, and a line system connected to the pump chamber with adjustable valves. The sampling device is configured so a beverage sample with a volume smaller than the volume of the pump chamber is introduced from the connection into the pump chamber. The pump chamber is then separated from the connection and is expanded so gas exits from the beverage sample. The pump chamber is then connected to the outlet opening and compressed so gas which has passed out of the beverage sample is displaced. Then, the pump chamber is connected to the discharging opening via the particle filter and compressed so the beverage sample is displaced.

Abstract: In a method for monitoring the correspondence of a beer sample with a reference beer, at least 15 reference beer samples of the reference beer are brewed with the same ingredients and the same process parameters. Measurement signals for the absorption spectrum of the reference beer samples are captured and a principal component analysis is carried out for the measurement signals, in which at least 15 principal components are ascertained. A factor loading PR(i,j) is respectively determined for each principal component for the individual reference beer samples and a reference value (I) is ascertained, where i denotes the reference beer sample and j denotes the principal component, ?R(j) refers to the mean value of all factor loadings of the j-th principal component and ?P(j) refers to the standard deviation of these factor loadings.

Abstract: In a method for determining the concentration of glucoraphanin in a plant a sample of the plant is contacted by a polar uncharged organic solvent and comminuted such that glucoraphanin and plant material contained in the sample are dissolved in the solvent and, after removal of undissolved plant parts, the extract formed thereby is subjected to an UV-absorption measurement wherein for a first wavelength range of 200-270 nm, an absorption signal is recorded. A second derivative of the absorption signal is then obtained for a second wavelength range of 240-250 nm and the value of the minimum of the second derivative is determined and, based on this value, a concentration value for the glucoraphanin in the plant is established.

Abstract: A sampling device for taking beverage samples from a beverage line containing a gaseous beverage under pressure comprises a connection for the beverage line, a pump having a compressible and expandable pump chamber, a particle filter, a discharging opening for the beverage sample, an outlet opening for waste, a control device and a line system which has adjustable valves and is connected to the pump chamber, to the connection for the beverage line, to the particle filter, to the discharging opening and to the outlet opening.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor structure with a substantially straight contact profile and methods of manufacture. The structure includes a block material comprising an upper oxidized layer at an interface with an insulating material; and an interconnect contact structure with a substantially straight profile through the oxidized layer of the block material.

Abstract: In a method for monitoring the correspondence of a beer sample with a reference beer, at least 15 reference beer samples of the reference beer are brewed with the same ingredients and the same process parameters. Measurement signals for the absorption spectrum of the reference beer samples are captured and a principal component analysis is carried out for the measurement signals, in which at least 15 principal components are ascertained. A factor loading PR(i,j) is respectively determined for each principal component for the individual reference beer samples and a reference value (I) is ascertained, where i denotes the reference beer sample and j denotes the principal component, ?R(j) refers to the mean value of all factor loadings of the j-th principal component and ?P(j) refers to the standard deviation of these factor loadings.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor structure with a substantially straight contact profile and methods of manufacture. The structure includes a block material comprising an upper oxidized layer at an interface with an insulating material; and an interconnect contact structure with a substantially straight profile through the oxidized layer of the block material.

Abstract: Some embodiments provide systems and/or methods of managing content in providing a playback experience associated with a portable storage medium by detecting access to a first portable storage medium with multimedia content recorded on the first portable storage medium; evaluating content on the first portable storage medium; evaluating local memory of the multimedia playback device; determining, in response to the evaluation of the content on the first portable storage medium and the evaluation of the local memory, whether memory on the local memory needs to be freed up in implementing playback of multimedia content in association with the first portable storage medium; and moving one or more contents stored on the local memory of the multimedia playback device to a virtual storage accessible by the multimedia playback device over a distributed network in response to determining that memory on the local memory needs to be freed up.

Abstract: In a method for determining the concentration of glucoraphanin in a plant a sample of the plant is contacted by a polar uncharged organic solvent and comminuted such that glucoraphanin and plant material contained in the sample are dissolved in the solvent and, after removal of undissolved plant parts, the extract formed thereby is subjected to an UV-absorption measurement wherein for a first wavelength range of 200-270 nm, an absorption signal is recorded. A second derivative of the absorption signal is then obtained for a second wavelength range of 240-250 nm and the value of the minimum of the second derivative is determined and, based on this value, a concentration value for the glucoraphanin in the plant is established.

Abstract: A semiconductor device includes a first metallization layer including a first dielectric layer. A first conductive layer and a first conductive structure are embedded in the first dielectric layer. A second dielectric layer is disposed on the first metallization layer. A second conductive layer is disposed on the second dielectric layer and has a lateral dimension in a lateral direction larger than a lateral dimension of the first conductive layer in the lateral direction. A third dielectric layer is disposed on the second conductive layer. A first contact is disposed in the third dielectric layer and extends through the second conductive structure in a first peripheric region thereof that does not overlap the first conductive layer to contact the first conductive structure. A capacitor structure includes the first conductive layer, the second dielectric layer and the second conductive layer.

Abstract: A semiconductor device includes a first metallization layer including a first dielectric layer. A first conductive layer and a first conductive structure are embedded in the first dielectric layer. A second dielectric layer is disposed on the first metallization layer. A second conductive layer is disposed on the second dielectric layer and has a lateral dimension in a lateral direction larger than a lateral dimension of the first conductive layer in the lateral direction. A third dielectric layer is disposed on the second conductive layer. A first contact is disposed in the third dielectric layer and extends through the second conductive structure in a first peripheric region thereof that does not overlap the first conductive layer to contact the first conductive structure. A capacitor structure includes the first conductive layer, the second dielectric layer and the second conductive layer.

Abstract: A method of manufacturing a semiconductor device comprising a capacitor structure is provided, including the steps of forming a first metallization layer comprising a first dielectric layer and a first conductive layer functioning as a lower electrode for the capacitor structure over a semiconductor substrate, forming a barrier layer functioning as a capacitor insulator for the capacitor structure on the first metallization layer, forming a metal layer on the barrier layer and etching the metal layer to form an upper electrode of the capacitor structure.

Abstract: A method of manufacturing a semiconductor device comprising a capacitor structure is provided, including the steps of forming a first metallization layer comprising a first dielectric layer and a first conductive layer functioning as a lower electrode for the capacitor structure over a semiconductor substrate, forming a barrier layer functioning as a capacitor insulator for the capacitor structure on the first metallization layer, forming a metal layer on the barrier layer and etching the metal layer to form an upper electrode of the capacitor structure.

Abstract: One method disclosed herein includes forming a layer of insulating material above a semiconductor substrate, forming a hard mask layer comprised of a metal-containing material above the layer of insulating material, forming a blanket protection layer on the hard mask layer, forming a masking layer above the protection layer, performing at least one etching process on the masking layer to form a patterned masking layer having an opening that stops on and exposes a portion of the blanket protection layer, confirming that the patterned masking layer is properly positioned relative to at least one underlying structure or layer and, after confirming that the patterned masking layer is properly positioned, performing at least one etching process through the patterned masking layer to pattern at least the blanket protection layer.

Abstract: A light-oil separator device includes a collector funnel having a downwardly directed stem portion having an outside diameter. The stem portion adapts to insert in an upward extending neck portion of a collection vessel. The neck portion includes an inner diameter that is greater than the outer diameter of the funnel stem. The neck also includes an oil port at a first height. The vessel includes a body having a hydrosol port at a lower portion of a body sidewall. This port connects to an evacuation tube having a proximal end and an S-shape. This conduit includes an air vent at a top portion at a second height lower than the first height, the air vent extends upward to a height higher than the first height. The S-shape conduit terminates with a downward facing end portion at its distal end.

Abstract: In sophisticated metallization systems, air gaps may be formed on the basis of a self-aligned patterning regime during which the conductive cap material of metal lines may be protected by providing one or more materials, which may subsequently be removed. Consequently, the etch behavior and the electrical characteristics of metal lines during the self-aligned patterning regime may be individually adjusted.

Abstract: Some embodiments provide systems and/or methods of managing content in providing a playback experience associated with a portable storage medium by detecting access to a first portable storage medium with multimedia content recorded on the first portable storage medium; evaluating content on the first portable storage medium; evaluating local memory of the multimedia playback device; determining, in response to the evaluation of the content on the first portable storage medium and the evaluation of the local memory, whether memory on the local memory needs to be freed up in implementing playback of multimedia content in association with the first portable storage medium; and moving one or more contents stored on the local memory of the multimedia playback device to a virtual storage accessible by the multimedia playback device over a distributed network in response to determining that memory on the local memory needs to be freed up.