Abstract: A magnetoresistive memory includes a control circuit with a first pole that, via a reading distributor, can be individually connected to first ends of bit lines by switching elements. The control circuit also has a second pole, which supplies power to an evaluator, and has a third pole that is connected to a reference voltage source. The readout circuit additionally includes a third voltage source having a voltage, which is approximately equal to the voltage of the first reading voltage source and which can be individually connected to second ends of the bit lines by means of switching elements. Finally, the readout circuit includes a fourth voltage source, which can be individually connected to second ends of the word lines by means of switching elements.

Abstract: A measuring cell for recording an electrical potential of an analyte situated on the measuring cell. The measuring cell has a sensor, a layer arranged above the sensor and electrically insulating the analyte from the sensor, and an amplifier circuit connected to the sensor on a substrate and having an input stage containing a field-effect transistor or a bipolar transistor, the sensor being at least indirectly connected to a control terminal of the field-effect transistor or of the bipolar transistor. An operating point of the amplifier circuit is set by means of a voltage or a current applied at the control terminal of the field-effect transistor or of the bipolar transistor of the input stage of the amplifier circuit.

Abstract: A circuit arrangement comprising a flip-flop, a first power switch transistor, and a plurality of switching transistors. The flip-flop has a plurality of storage transistors with a threshold voltage of a first value. The first power switch transistor has a threshold voltage of a second value, wherein an application of a predetermined electrical potential to its gate terminal brings the circuit arrangement to an operating state such that if at least one supply voltage is switched off, electric charge carriers contained in the circuit arrangement are prevented from flowing away from the circuit arrangement. The plurality of switching transistors, which have a threshold voltage of a third value, are provided between the flip-flop and the first power switch transistor, for coupling a flip-flop input signal into the flip-flop. The magnitude of the first and/or the second value is greater than the magnitude of the third value.

Abstract: A device and method for detecting nucleic acids. The device having a biosensor with at least two nucleic acid immobilization units and an electrical detection circuit. In the biosensor, the at least two nucleic acid immobilization units are in this case electrically conductive and electrically insulated from one another. The at least two nucleic acid immobilization units are provided with first nucleic acid molecules acting as scavenger molecules. The first nucleic acid molecules are present as single-stranded molecules and can bind second nucleic acid molecules to be detected. The first single-stranded nucleic acid molecules acting as scavenger molecules are provided with a redox-active label capable of generating a detectable signal. The electrical detection circuit is configured in such a way that it detects the hybridization even of the nucleic acid molecules with the scavenger molecules by means of the label.

Abstract: The invention relates to a biosensor that is provided with a first electrode having a first holding area and a second electrode having a second holding area for holding probe molecules which can bind macromolecular biopolymers to be detected. The first electrode and the second electrode are arranged in relation to one another in such a way that essentially unbent field lines of a generated electric field can be embodied between said electrodes.

Abstract: A micromechanical sensor element for recording the bonding of molecules to the micromechanical sensor element. The sensor element having a substrate and at least one electrical terminal. There is also an oscillatable element that is coupled to the electrical terminal in such a manner that an electrical variable that characterizes the oscillation behavior of the oscillatable element may be provided at the electrical terminal. Further, there is a molecule coupling layer, arranged in such a manner that molecules may bond to the molecule coupling layer. The molecule coupling layer is coupled to the oscillatable element in such a manner that bonding of molecules to the molecule coupling layer causes a change in the oscillation behavior of the oscillation element.

Abstract: A multivalue magnetoresistive read/write memory and method of writing to and reading from such a memory. The invention has, inter alia, one or more storage cells, each storage cell having two intersecting electric conductors and a layer system comprising magnetic layers located at the intersection of the electric conductors. The memory is characterized in that the layer system is designated as a multilayer system with two or more magnetic layers, wherein at least two of the magnetic layers have a magnetization direction that can be set independently of one another. Further, the magnetization direction of the individual layers may be changed on the basis of the electric current flowing through the electric conductors.

Abstract: The inventive biosensor has three electrodes, the first electrode having a retaining area for retaining probe molecules which bind with the macromolecular biopolymers. The second electrode and the third electrode are configured in such a way that the redox process is part of a redox recycling system on said second and third electrodes.

Abstract: In a first phase a first sensor signal, essentially comprising the current offset signal of the sensor, is applied to the input of an electronic circuit. The first sensor signal is fed to a first signal path and stored therein. In a second phase a second sensor signal, comprising the current offset signal and a time-dependent measured signal, is applied to the input and the stored first sensor signal is fed to the input by means of the first signal path, such that essentially the time dependent measured signal is fed by means of a second signal path coupled to the input.

Abstract: The invention relates to a biosensor chip that is provided with a first electrode and a second electrode. The first electrode is provided with a holding area for holding probe molecules which can bind macromolecular biopolymers. The invention also relates to an integrated electric differentiating circuit by means of which an electric current can be detected and can be differentiated according to time, whereby said current is generated during a reduction/oxidation recycling procedure.

Abstract: The invention relates to a first electrode that is provided with a holding area for holding probe molecules which can bind macromolecular biopolymers. The first electrode and/or a second electrode is/are divided into a plurality of electrode segments that are electrically insulated from one another. The randomly selected electrode segments, independently from one another, can be electrically coupled in such a way that an effective electrode surface can be adjusted in the size thereof according to the selected electrode segments.

Abstract: A description is given of a method and a circuit configuration for evaluating an information content of a memory cell, preferably of an MRAM memory cell, or of a memory cell array. In order to be able to perform accurate and reliable evaluation of the memory cell, a first current value flowing through the memory cell or a voltage value correlated with the current value is measured and conducted through a first circuit branch, which has a switch and a capacitance, and is buffer-stored. The memory cell is subsequently subjected to a programming operation. Afterward, in the same memory cell a second current value or voltage value is measured and conducted through a second circuit branch that has a switch and a capacitance and is buffer-stored there. The two measured values are compared with one another in an evaluation unit.

Abstract: Sensor elements are arranged in a hexagonal grid. A processor element in the form of a primitive automaton is assigned to each of the sensor elements in the grid. The processor elements are set up to perform algorithms which enable lines of a fingerprint to be simplified such that characteristic minutiae of the fingerprint (endings and branchings of the lines) can be extracted. The processor elements are embodied using CMOS/Neuron MOS threshold value logic or using CMOS/NMOS pass transistor logic. The image grid can be read out via read-out circuits as a matrix.

Abstract: The transistors (101, 124) of the sensor array (100) are configured as sensors. In addition, selection means (112-114, 116-118) are provided for selecting a transistor (124) whose condition is to be detected. The sensor (100) is set up in such a way that the selected transistor (124) can be operated as a source tracker, at least after successful selection.

Abstract: The invention relates to an electric selection unit for selecting an electric component to be tested. The invention also relates to a control element by means of which parasitic voltage drop in the test circuit arrangement can be compensated for.

Abstract: The invention relates to a test circuit configuration. Every gate terminal of a transistor to be tested is coupled to a gate voltage source in such a manner that the gate voltage can be measured and adjusted individually on every gate terminal. The source terminal of every transistor to be tested can be coupled to the source voltage source in such a manner that the source voltage can be measured and adjusted individually on every source terminal.

Abstract: The magnetoresistive memory has a reduced current density in the bit lines and/or word lines. This avoids electromigration problems. The current density is reduced such that a compact field concentration is attained, for example, by the use of ferrite in the area around the magnetic memory cells.

Abstract: A description is given of a method and a circuit configuration for evaluating an information content of a memory cell, preferably of an MRAM memory cell, or of a memory cell array. In order to be able to perform accurate and reliable evaluation of the memory cell, a first current value flowing through the memory cell or a voltage value correlated with the current value is measured and conducted through a first circuit branch, which has a switch and a capacitance, and is buffer-stored. The memory cell is subsequently subjected to a programming operation. Afterward, in the same memory cell a second current value or voltage value is measured and conducted through a second circuit branch that has a switch and a capacitance and is buffer-stored there. The two measured values are compared with one another in an evaluation unit.

Abstract: A circuit configuration for assessing capacitances in a matrix, which has a number of rows with at least one capacitance in at least one dimension, includes a test arm connected to first electrodes of each of the capacitances to be assessed and by which two different potentials can be applied to the first electrodes, a measurement arm connected to second electrodes of each of the capacitances to be assessed and that has a first measurement path and a second measurement path connected to a common potential. The first measurement path has an instrument for assessing the capacitances and the first and second measurement paths can be connected to the second electrodes. The circuit configuration has a drive device that connects each of the capacitances to be assessed individually to the two different potentials.

Abstract: A description is given of a method and a circuit configuration for evaluating an information content of a memory cell, preferably of an MRAM memory cell, or of a memory cell array. In order to be able to perform accurate and reliable evaluation of the memory cell, a first current value flowing through the memory cell or a voltage value correlated with the current value is measured and conducted through a first circuit branch, which has a switch and a capacitance, and is buffer-stored. The memory cell is subsequently subjected to a programming operation. Afterward, in the same memory cell a second current value or voltage value is measured and conducted through a second circuit branch that has a switch and a capacitance and is buffer-stored there. The two measured values are compared with one another in an evaluation unit.