Abstract: A storage device, apparatus, and method to write and/or read data from such storage device. The storage device, comprises a channel controller and phase change memory integrated circuits (PCM ICs) arranged in sub-channels, wherein each of the sub-channels comprises several PCM ICs connected by at least one data bus line, which at least one data bus line connects to the channel controller. The channel controller is configured to write data to and/or read data from the PCM ICs according to a matrix configuration of PCM ICs, wherein: a number of columns of the matrix configuration respectively corresponds to a number of the sub-channels, the sub-channels forming a channel, and a number of rows of the matrix configuration respectively corresponds to a number of sub-banks, the sub-banks forming a bank, wherein each of the sub-banks comprises PCM ICs that belong, each, to distinct sub-channels of the sub-channels.

Abstract: A method for managing a memory is disclosed, the memory including a set of units and a unit comprising a set of pages, wherein a unit of the set of units is erasable as a whole by a unit reclaiming process resulting in a free unit available for writing data to. The method includes maintaining a first pool of units available for reclamation by the unit reclaiming process; maintaining a second pool of units not available for reclamation by the unit reclaiming process; moving a first unit from the first pool to the second pool in response to invalidating a first one of the pages contained in the first unit; returning the first unit from the second pool to the first pool after a defined number of units of the set have been written; and selecting a unit out of the first pool for reclamation by the unit reclaiming process.

Abstract: A technique for adapting over-provisioning space in a storage system includes determining one or more workload characteristics in the storage system. Over-provisioning space in the storage system is then adjusted to achieve a target write amplification for the storage system, based on the workload characteristics.

Abstract: A technique for garbage collection in a data storage system includes determining a dirty physical byte count for each of a plurality of candidate garbage collection units. The dirty physical byte count provides a total amount of dirty bytes. At least one of a dirty physical codeword container count and a dirty physical page count is determined for each of the candidate garbage collection units. The dirty physical codeword container count provides an amount of physical codeword containers that are completely dirty and the dirty physical page count provides an amount of physical pages that are completely dirty. A garbage collection unit, included in the candidate garbage collection units, is selected for garbage collection based on the dirty physical byte count and at least one of the dirty physical codeword container count and the dirty physical page count.

Abstract: A technique for garbage collection in a storage system includes generating regrouping metadata for one or more pages of at least two logical erase blocks (LEB). The regrouping metadata indicates an associated stream for each of the pages. Multiple of the LEBs that include valid pages associated with a first stream are selected, based on the regrouping metadata, for regrouping. The valid pages associated with the first stream from the selected LEBs are regrouped into a new LEB.

Abstract: A technique for garbage collection in a data storage system includes determining a dirty physical byte count for each of a plurality of candidate garbage collection units. The dirty physical byte count provides a total amount of dirty bytes. At least one of a dirty physical codeword container count and a dirty physical page count is determined for each of the candidate garbage collection units. The dirty physical codeword container count provides an amount of physical codeword containers that are completely dirty and the dirty physical page count provides an amount of physical pages that are completely dirty. A garbage collection unit, included in the candidate garbage collection units, is selected for garbage collection based on the dirty physical byte count and at least one of the dirty physical codeword container count and the dirty physical page count.

Abstract: A mechanism is provided in a non-volatile memory controller for reducing read access latency by straddling pages across non-volatile memory channels. Responsive to a request to write a logical page to a non-volatile memory array, the non-volatile memory controller determines whether the logical page fits into a current physical page. Responsive to determining the logical page does not fit into the current physical page, the non-volatile memory controller writes a first portion of the logical page to a first physical page in a first block and writes a second portion of the logical page to a second physical page in a second block. The first physical page and the second physical page are on different non-volatile memory channels.

Abstract: In one embodiment, an apparatus includes one or more memory devices, each memory device having non-volatile memory configured to store data, and a memory controller connected to the one or more memory devices, the memory controller being configured to receive data to be stored to the one or more memory devices, store read-hot data within one error correction code (ECC) codeword as aligned data, and store read-cold data to straddle two or more ECC codewords as non-aligned data and/or dispersed data. According to another embodiment, a method for storing data to non-volatile memory includes receiving data to store to one or more memory devices, each memory device including non-volatile memory configured to store data, storing read-hot data within one ECC codeword as aligned data, and storing read-cold data to straddle two or more ECC codewords as non-aligned data and/or dispersed data.

Abstract: A computer-implemented method, according to one embodiment, includes: maintaining, by a processor, a first open logical erase block for user writes; maintaining, by the processor, a second open logical erase block for relocate writes; receiving, by the processor, a first data stream having the user writes; transferring, by the processor, the first data stream to the first open logical erase block; receiving, by the processor, a second data stream having the relocate writes; and transferring, by the processor, the second data stream to the second open logical erase block. Moreover, the first and second open logical erase blocks are different logical erase blocks. Other systems, methods, and computer program products are described in additional embodiments.

Abstract: Techniques for selecting a storage node of a storage system to store data include applying a first function to at least some data chunks of an extent to provide respective first values for each of the at least some data chunks. A storage node, included within multiple storage nodes of a storage system, is selected to store the extent based on a majority vote derived from the respective first values.

Abstract: In at least one embodiment, a non-volatile memory array including a plurality of blocks each including a plurality of physical pages is controlled by a controller. The controller implements a plurality of nested page retirement classes each defined by a respective one of a plurality of different nested subsets of page indices of physical pages within the plurality of blocks that are to be considered retired from use. For each block among the plurality of blocks, the controller updating an indication of a page retirement class to which the block belongs in response to detection of a retirement-causing error in a data page stored in a physical page of the block. The controller forms block stripes for storing data from the plurality of blocks based on the page retirement classes of the blocks.

Abstract: An apparatus, according to one embodiment, includes: one or more memory devices, each memory device comprising non-volatile memory configured to store data, and a memory controller connected to the one or more memory devices. The memory controller is configured to: detect at least one read of a logical page straddled across codewords, store an indication of a number of detected reads of the straddled logical page, and relocate the straddled logical page to a different physical location in response to the number of detected reads of the straddled logical page, wherein the logical page is written to the different physical location in a non-straddled manner. Other systems, methods, and computer program products are described in additional embodiments.

Abstract: A controller-implemented method, according to one embodiment, includes: restoring a valid snapshot of a LPT from the non-volatile random access memory, examining each journal entry from at least one journal beginning with a most recent one of the journal entries in a most recent one of the at least one journal and working towards an oldest one of the journal entries in an oldest one of the at least one journal, the journal entries corresponding to updates made to one or more entries of the LPT, determining whether a current LPT entry which corresponds to a currently examined journal entry has already been updated, using the currently examined journal entry to update the current LPT entry in response to determining that the current LPT entry has not already been updated, and discarding the currently examined journal entry in response to determining that the current LPT entry has already been updated.

Abstract: In one embodiment, a computer-implemented method includes determining, by a processor, after the writing of data to a non-volatile memory block, one or more delta threshold voltage shift (TVS?) values configured to track temporary changes with respect to changes in the underlying threshold voltage distributions due to retention and/or read disturb errors. One or more overall threshold voltage shift values is calculated for the data written to the non-volatile memory block, the one or more overall threshold voltage shift values being a function of the one or more TVS? values to be used when writing data to the non-volatile memory block. The one or more overall threshold voltage shift values are stored.

Abstract: A storage device, apparatus, and method to write and/or read data from such storage device. The storage device, comprises a channel controller and phase change memory integrated circuits (PCM ICs) arranged in sub-channels, wherein each of the sub-channels comprises several PCM ICs connected by at least one data bus line, which at least one data bus line connects to the channel controller. The channel controller is configured to write data to and/or read data from the PCM ICs according to a matrix configuration of PCM ICs, wherein: a number of columns of the matrix configuration respectively corresponds to a number of the sub-channels, the sub-channels forming a channel, and a number of rows of the matrix configuration respectively corresponds to a number of sub-banks, the sub-banks forming a bank, wherein each of the sub-banks comprises PCM ICs that belong, each, to distinct sub-channels of the sub-channels.

Abstract: In one embodiment, a method includes maintaining a first open logical erase block for user writes, maintaining a second open logical erase block for relocate writes, wherein the first and second open logical erase blocks are different logical erase blocks, receiving a first data stream having the user writes, transferring the first data stream to the first open logical erase block, receiving a second data stream having the relocate writes, and transferring the second data stream to the second open logical erase block. Other systems, methods, and computer program products are described in additional embodiments.

Abstract: A storage device, apparatus, and method to write and/or read data from such storage device. The storage device, comprises a channel controller and phase change memory integrated circuits (PCM ICs) arranged in sub-channels, wherein each of the sub-channels comprises several PCM ICs connected by at least one data bus line, which at least one data bus line connects to the channel controller. The channel controller is configured to write data to and/or read data from the PCM ICs according to a matrix configuration of PCM ICs, wherein: a number of columns of the matrix configuration respectively corresponds to a number of the sub-channels, the sub-channels forming a channel, and a number of rows of the matrix configuration respectively corresponds to a number of sub-banks, the sub-banks forming a bank, wherein each of the sub-banks comprises PCM ICs that belong, each, to distinct sub-channels of the sub-channels.

Abstract: A mechanism is provided for coordinated garbage collection in an array controller of a two-level hierarchical log structured array architecture for a non-volatile memory array. The two-level hierarchical log structured array (LSA) architecture comprises an array-level LSA in the array controller and a node-level LSA in each node of the non-volatile memory array. The array controller writes logical pages of data to containers in memory of the array-level storage controller at node logical block addresses in an array-level LSA. The array-level LSA maps the host logical block addresses to node logical block addresses in a node-level LSA in a plurality of nodes. Responsive to initiating array-level garbage collection in the array controller, the mechanism identifies a first container to reclaim according to a predetermined garbage collection policy.

Abstract: Non-volatile memory block management. A method according to one embodiment includes calculating an error count margin threshold for each of the at least some non-volatile memory blocks of a plurality of non-volatile memory blocks. A determination is made as to whether the error count margin threshold of any of the at least some of the non-volatile memory blocks has been exceeded. A memory block management function is triggered upon determining that the error count margin threshold of any of the at least some of the non-volatile memory blocks has been exceeded.

Abstract: A computer-implemented method, according to one embodiment, includes: assigning data having a first heat to a first data stream, assigning data having a second heat to a second data stream, determining an anticipated throughput of each of the first and second data streams, assigning a first number of logical erase blocks of non-volatile memory to the first data stream based on the anticipated throughput of the first data stream, and assigning a second number of logical erase blocks of non-volatile memory to the second data stream based on the anticipated throughput of the second data stream. Other systems, methods, and computer program products are described in additional embodiments.