Abstract: A micro light-emitting diode display device includes a substrate, a first planarization layer, a first light-emitting element, and a second planarization layer. The first planarization layer is disposed on the substrate and has a first opening. The first opening has a first opening inner wall. The first light-emitting element is disposed on the substrate, in the first opening, and separated from the first opening inner wall. The second planarization layer is disposed on the substrate and between the first planarization layer and the first light-emitting element. The second planarization layer is in contact with the first light-emitting element.

Abstract: A fuel cell system bipolar plate formed of a graphite metal composite. The bipolar plate is formed of a metal foil formed of tantalum or a metal having a tantalum coating. Flexible graphite deposited in rows on each surface of the metal foil forms channels of the bipolar plate and providing a flow field. The graphite metal composite provides flexural strength as well as resistance to corrosion.

Abstract: A method and an electronic apparatus for predictive value decision and a computer-readable recording medium thereof are provided. First, a model operation interface is activated, and in response to receiving an operation through the model operation interface, the following steps are executed. A shipment predictive value at a target time point is calculated based on historical shipment data. Next, a change ratio scale corresponding to the target time point is calculated using the shipment predictive value corresponding to the target time point and multiple previous shipment predictive values at multiple time points before the target time point. Moreover, an average value of past change ratio scales corresponding to the target time point is calculated based on the historical shipment data. Finally, predictive performance information is provided based on the average value of the past change ratio scales and the change ratio scale corresponding to the target time point.

Abstract: A UE receives configurations of first and second configured SRS resource sets for non-codebook based transmission. The UE receives DCI containing a first SRI field and a second SRI field. The first SRI field indicates an SRS resource of a first indicated SRS resource set. The second SRI field indicates an SRS resource of a second indicated SRS resource set. A size of the first SRI field is based on a first maximum number of layers, a second maximum number of layers, a third maximum number of layers, a first number of SRS resources in the first indicated SRS resource set, and a second number of SRS resources in the second indicated SRS resource set. A size of the second SRI field is based on the third maximum number of layers and the second number of SRS resources in the second indicated SRS resource set.

Abstract: A semiconductor structure includes a semiconductor epitaxial layer, a first semiconductor well, a second semiconductor well, a source doped region, a gate structure and a drain structure. The semiconductor epitaxial layer includes a first side and a second side opposite to the first side. The first semiconductor well is located on the first side of the semiconductor epitaxial layer. The second semiconductor well is located on the second side of the semiconductor epitaxial layer. The source doped region is located in the first semiconductor well. The gate structure overlaps the first semiconductor well and the source doped region on the first side of the semiconductor epitaxial layer. The drain structure includes a semiconductor substrate. The second side of the semiconductor epitaxial layer outside the second semiconductor well includes a connecting surface. The connecting surface of the semiconductor epitaxial layer is connected to the semiconductor substrate.

Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

Abstract: A mending method for a display includes the steps of making a display device light to make a plurality of light emitting positions thereof shine, searching out a plurality of defect positions among the light emitting positions, providing a transferring device having a transferring surface with a plurality of miniature light emitting elements positioned correspondingly to the light emitting positions, planning a mending procedure which includes in the area the transferring surface corresponds to, choosing in chief the largest number of defect positions able to be mended at a single time according to the positions of the miniature light emitting elements and then in the area the transferring surface corresponds to, planning the rest of the defect positions according to the rest of the miniature light emitting elements, and according to the mending procedure, moving the transferring device to weld the miniature light emitting elements at the defect positions.

Abstract: A method for performing motion compensation includes: receiving a first wrap-around motion compensation flag associated with one or more pictures and indicating whether horizontal wrap-around motion compensation is enabled for the one or more pictures; and in response to the horizontal wrap-around motion compensation being enabled for the one or more pictures, receiving a parameter associated with a wrap-around motion compensation offset, the wrap-around motion compensation offset being associated with the one or more pictures, wherein a value of the wrap-around motion compensation offset is less than or equal to a difference minus 2, and the difference is obtained by a quotient of a picture width in luma samples divided by a minimum luma coding block size minus a quotient of a luma coding tree block size divided by the minimum luma coding block size.

Abstract: Disclosed herein is a method for identifying and treating an early-stage hepatocellular carcinoma (HCC) in a subject. The method mainly includes determining the level of serum amyloid A (SAA) protein, and providing anti-cancer treatment based on the determined level of SAA protein. According to some embodiments of the present disclosure, the anti-cancer treatment is provided when the determined level of SAA protein is lower than that of a first control sample, or when the determined level of SAA protein is higher than that of a second control sample. In some embodiments, the first control sample is derived from a subject having a late stage HCC, and the second control sample is derived from a subject having a liver disease that is any of hepatitis, liver cirrhosis, or a combination thereof.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE determines to send a first power headroom report (PHR) and a second PHR. The UE receives a resource allocation for a physical uplink shared channel (PUSCH). The UE includes the first PHR and the second PHR in a MAC control element (MAC CE). The UE transmits the PUSCH including the MAC CE.

Abstract: Disclosed is an organic electroluminescence device. The organic electroluminescence device has an organic layer having a specific combination in which a hole transporting material is doped with a p-type conductive doped material. The organic electroluminescence device can provide better device performance, such as lifetime improvement and voltage reduction.

Abstract: The present disclosure provides systems and methods for processing video content. The method can include: partitioning, along a partitioning edge, a plurality of blocks associated with a picture into a first partition and a second partition; performing inter prediction on the plurality of blocks, to generate a first prediction signal for the first partition and a second prediction signal for the second partition; and blending the first and second prediction signals for edge blocks associated with the partitioning edge.

Abstract: A semiconductor structure includes a first channel layer and a first barrier layer on the first channel layer. The first channel layer has a first potential well adjacent to the interface between the first channel layer and the first barrier layer. The semiconductor structure further includes a second channel layer on the first barrier layer, a second barrier layer on the second channel layer, and an intermediate layer between the second channel layer and the second barrier layer. The second channel layer has a second potential well adjacent to the interface between the second channel layer and the intermediate layer. The intermediate layer has a greater energy gap than either the first barrier layer or the second barrier layer. The energy gap of the first barrier layer is no less than the energy gap of the second barrier layer.

Abstract: A semiconductor device includes a substrate, an epitaxial layer on the substrate, a first well region in the epitaxial layer, a source region in the first well region, a source contact, a base region wrapping around a sidewall of the source contact and a second well region wrapping around the base region. The substrate, the epitaxial layer and the source region include a plurality of dopants of a first semiconductor type. A bottom of the source contact is lower than a bottom of the first well region. The base region and the second well region include a plurality of dopants of a second semiconductor type. The second semiconductor type is different from the first semiconductor type, and a doping concentration of the base region is higher than a doping concentration of the first well region and a doping concentration of the second well region.

Abstract: The present disclosure provides a transistor structure including a semiconductor stack, a gate structure, and a conductive element. The semiconductor stack includes a drift layer above a substrate, a first doping region in the drift layer, and a depletion region in the drift layer adjacent to the first doping region. The drift region has a first conductive type, and the first doping region has a second conductive type. The gate structure is positioned on the semiconductor stack and covers the depletion region. The conductive element including a metal layer is in the depletion region, in which a top surface of the metal layer directly contacts a bottom surface of the gate structure.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

Abstract: The present disclosure provides a video data processing method. The method includes: receiving a bitstream; decoding a first index from the bitstream; determining a maximum number of an adaptive loop filter (ALF) for a component of a picture based on the first index; and processing pixels in the picture with the ALF.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.