Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer.

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

Abstract: Provided herein is an optical protection element replacement system of a security camera device, including a security camera device and a replacement device. The lens of the security camera device is covered by a part of an elastic optical protection element. The processing unit compares the captured images with a preset condition, and generates a driving signal if the captured image does not match the preset condition. The replacement device includes a retrieving module and a dispensing module. The retrieving module pulls back a preset length of the elastic optical protection element based on the driving signal. The dispensing module accommodates and dispenses the elastic optical protection element. Therefore, the front side of the security camera device stays clean so that it may continuously provide high quality images. Further equivalent methods are also provided for the same purpose.

Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

Abstract: A light-emitting device including a light-emitting unit, a packaging sealant, a transparent layer, and a reflective structure is provided. The light-emitting unit has at least one epitaxial layer and two electrodes correspondingly formed on the epitaxial layer. The epitaxial layer has a top surface, a bottom surface on which the two electrodes are exposed, and a side surface connecting the bottom surface and the top surface. The packaging sealant is formed on the top surface and the side surface of the epitaxial layer. The transparent layer is disposed on the packaging sealant and located above the top surface of the epitaxial layer. The reflective structure is disposed surrounding the side surface of the epitaxial layer and formed on the packaging sealant. A manufacturing method of the above light-emitting device is further provided.

Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.

Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser to the LED wafer and irradiating the LED wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

Abstract: A method of producing a nanocomposite film includes generating a bilayer film including at least a first layer of at least one nanoparticle and a second layer of at least one material and annealing the bilayer film. A uniform nanocomposite film includes a plurality of nanoparticles dispersed in a polymer matrix, wherein the plurality of nanoparticles form at least 60% by volume of the polymer nanocomposite film.

Abstract: An array substrate includes a substrate, data lines, gate lines, at least one pixel electrode, at least one common electrode, at least one light-shielding pattern, and at least one auxiliary electrode. At least one pixel region is defined by the data lines and the gate lines disposed and crossing with one another on the substrate. The pixel electrode, the common electrode, the light-shielding pattern, and the auxiliary electrode are disposed on the substrate and at least partially located in the pixel region. The pixel electrode includes at least one first branch electrode, and the common electrode includes at least one second branch electrode. The first branch electrode and the second branch electrode are disposed alternately in a first direction. The light-shielding pattern is disposed between a data line adjacent to the pixel region and the first branch electrode in the first direction.

Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.

Abstract: A light-emitting device is disclosed. The light-emitting diode device includes a substrate, comprising an upper surface, a lower surface and a plurality of side surfaces; and a semiconductor stack formed on the upper surface of the substrate; wherein the plurality of side surfaces comprises: a first region, adjacent to the upper surface and having a first surface roughness; a second region, comprising one or a plurality of textured areas substantially parallel to the upper surface and/or the lower surface in a side view, wherein the textured area is composed of a plurality of textured stripes and has a second surface roughness; and a third region, having a third surface roughness and being between the first region and the second region, and/or between the plurality of textured areas; wherein the first surface roughness is smaller than the second surface roughness, and the third surface roughness is smaller than the first surface roughness.

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

Abstract: A display panel including a driving substrate, a display film, a first protection film, a first adhesion layer, and a sidewall structure is provided. The display film is disposed on the driving substrate. The first protection film is adhered on the display film through the first adhesion layer. The display film is located between the driving substrate and the first protection film. A material of the first adhesion layer is thermal melt-able. The sidewall structure is in contact with a side surface of the display film and includes the material of the first adhesion layer which is melted and re-solidified. In addition, a manufacture method of the display panel includes irradiating the driving substrate the first protection film and the first adhesion layer with a laser to form the sidewall structure in contact with the side surface of the display film.

Abstract: The present invention provides a stirring device and gear train, the stirring device comprises at least one gear; at least one stirring tube; and at least one connecting portion connecting the gear and the stirring tube. Wherein the gear, the connecting portion, and the stirring portion are hollow, and the gear rotates the stirring tube via the connecting portion. Stirring is performed by utilizing the gear and the stirring tube in the stirring device of the present invention. Not only does the biggest flux be achieved per area, but the problem about cross contamination can also be reduced. In addition, in the gear train, the collimation of the stirring device can be increased by a specific hollow gear and a lengthened hollow bearing train forth in the gear train.

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly.

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from ?0.2 volts to ?1.8 volts.

Abstract: A pixel structure is provided. The pixel structure includes a scan line, a data line, an active device, a pixel electrode, and a common electrode. The active device is electrically connected to the scan line and the data line. The pixel electrode is electrically connected to the active device. The pixel electrode includes multiple first layer pixel electrode patterns and multiple second layer pixel electrode patterns. The common electrode includes a plurality of first layer common electrode patterns and a plurality of second layer common electrode patterns. A fringe electric field is between each first layer pixel electrode pattern and corresponding portion of second layer common electrode patterns, and between each first layer common electrode pattern and corresponding portion of second layer pixel electrode patterns. A horizontal electric field is between each second layer pixel electrode pattern and the adjacent portion of second layer common electrode patterns.

Abstract: A display device includes a plurality of pixel units. Each of the pixel units at least includes three sub-pixels for displaying different colors. The three sub-pixels are electrically connected to three different gate lines, and at least two of the three sub-pixels are electrically connected to the same data line.