Abstract: The present disclosure provides a method and system for processing multi-modality images. The method may include obtaining multi-modality images; registering the multi-modality images; fusing the multi-modality images; generating a reconstructed image based on a fusion result of the multi-modality images; and determining a removal range with respect to a focus based on the reconstructed image. The multi-modality images may include at least three modalities. The multi-modality images may include a focus.

Abstract: Provided are a bispecific antibody and use thereof. The recombinant antibody includes: a CDR Sequence selected from at least one of CD3 antibody variable region CDR sequences: SEQ ID NO: 1 to SEQ ID NO: 6, and B7H6 antibody variable region CDR sequences: SEQ ID NO: 7 to SEQ ID NO: 12; or an amino acid sequence having at least 95% identity thereto. The recombinant antibodies prepared according to the present application can simultaneously target CD3 and B7H6 antigens, and they have a. significantly prolonged half-life, exhibiting a stronger tumor-inhibiting ability than single-target antibodies.

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

Abstract: The present application discloses a display module and a display device. The display module includes a light grating assembly. The light grating assembly includes alternately arranged first regions and second regions, and liquid crystal molecules and dye molecules distributed in the first regions and the second regions. Arrangement of the liquid crystal molecules and the dye molecules are controlled to make the first regions light-transmissive and the second regions light-transmissive under a first mode and not light-transmissive under a second mode to form alternately light and dark stripes under the second mode.

Abstract: A display panel and a display device are provided. The display panel includes a first substrate, a second substrate, and a liquid crystal layer between the first substrate and the second substrate. The liquid crystal layer comprises a plurality of liquid crystal molecules. When the display panel is in a first display mode, the plurality of liquid crystal molecules rotate in a slanted plane parallel to a first direction and a second direction. The first direction is slanted with respect to a thickness direction of the display panel, and the second direction is perpendicular to the thickness direction of the display panel and the first direction.

Abstract: In one aspect, an apparatus includes a chamber body, a blocker plate for delivering process gases into a gas mixing volume, and a face plate having holes through which the mixed gas is distributed to a substrate. In another aspect, the face plate may include a first region with a recess relative to a second region. In another aspect, the blocker plate may include a plurality of regions, each region having different hole patterns/geometries and/or flow profiles. In another aspect, the apparatus may include a radiation shield disposed below a bottom of the substrate support. A shaft or stem of the substrate support includes holes at an upper end thereof near the substrate support.

Abstract: A pixel circuit and a driving method thereof, and a display device are provided. The pixel circuit includes a driving sub-circuit, a data writing sub-circuit, a first light-emitting control sub-circuit, a second light-emitting control sub-circuit, a compensation sub-circuit, and a first reset sub-circuit, and is configured to generate a driving current to control a light-emitting element to emit light, the first reset sub-circuit comprises a first transistor, the compensation sub-circuit comprises a second transistor, the first transistor and the second transistor are both polysilicon oxide thin film transistors, and an active layer type of the first transistor and an active layer type of the second transistor are different from an active layer type of a transistor comprised in at least one selected from a group consisting of the driving sub-circuit, the data writing sub-circuit, the first light-emitting control sub-circuit, and the second light-emitting control sub-circuit.

Abstract: The disclosure provides a method for heat-treating a boron steel, which includes: carburizing a boron steel on a surface thereof to obtain a carburized boron steel; austenitizing the carburized boron steel at a temperature of 885-895° C. for 25-35 min, to obtain an austenitized boron steel; sequentially subjecting the austenitized boron steel to an oil quenching and a tempering, wherein the oil quenching is performed at a temperature of 55-65° C. for 29-31 min.

Abstract: Provided herein are N-acetylgalactosamine (GalNAc)-derived compounds, modified oligonucleotides, and methods of modulating protein function and treating diseases, disorders, and symptoms in a subject.

Abstract: The present disclosure provides a transmission feedback method and a UE. The transmission feedback method includes: transmitting a time-frequency transmission resource for transmitting feedback information for unicasting or multicasting transmission to at least one target UE which has established a connection with a source UE; acquiring the feedback information transmitted on the time-frequency transmission resource from the target UE; and determining a unicasting or multicasting transmission state in accordance with the feedback information.

Abstract: A display device and a dimming device are provided. A dimming layer is located between a first polarizer and a second polarizer whose transmission axes are parallel to each other. When the display device is in a first display mode, long axes of the liquid crystal molecules distributed in the first polymer network are arranged along the second direction, and long axis of the liquid crystal molecules distributed in the second polymer network are arranged along the third direction. The third direction and the second direction respectively point to opposite sides of a normal line of the first polarizer.

Abstract: Embodiments of the present disclosure generally relate to methods, systems, and apparatus for forming layers having single crystalline structures. In one implementation, a method of processing substrates includes positioning a substrate in a processing volume of a chamber, and heating the substrate to a substrate temperature that is 800 degrees Celsius or less. The method includes maintaining the processing volume at a pressure within a range of 1.0 Torr to 8.0 Torr, and flowing one or more silicon-containing gases and one or more diluent gases into the processing volume. The method includes reacting the one or more silicon-containing gases to form one or more reactants, and depositing the one or more reactants onto an exposed surface of the substrate to form one or more silicon-containing layers on the exposed surface. The one or more silicon-containing layers each having a single crystalline structure.

Abstract: Embodiments of the present disclosure relate to processes for filling trenches. The process includes depositing a first amorphous silicon layer on a surface of a layer and a second amorphous silicon layer in a portion of a trench formed in the layer, and portions of side walls of the trench are exposed. The first amorphous silicon layer is removed. The process further includes depositing a third amorphous silicon layer on the surface of the layer and a fourth amorphous silicon layer on the second amorphous silicon layer. The third amorphous silicon layer is removed. The deposition/removal cyclic processes may be repeated until the trench is filled with amorphous silicon layers. The amorphous silicon layers form a seamless amorphous silicon gap fill in the trench since the amorphous silicon layers are formed from bottom up.

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

Abstract: Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.

Abstract: Methods for forming a metal carbide liner in features formed in a substrate surface are described. Each of the features extends a distance into the substrate from the substrate surface and have a bottom and at least one sidewall. The methods include depositing a metal carbide liner in the feature of the substrate surface with a plurality of high-frequency ratio-frequency (HFRF) pulses. Semiconductor devices with the metal carbide liner and methods for filling gaps using the metal carbide liner are also described.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. Alternating layers of material may be formed on the substrate. One or more recesses may be formed in the alternating layers of material. The methods may include forming a first silicon-containing material. The first silicon-containing material may extend into the one or more recesses formed in the alternating layers of material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming a silicon-and-halogen-containing material. The silicon-and-halogen-containing material may overly the first silicon-containing material. The methods may include forming a second silicon-containing material.

Abstract: The present disclosure provides a heteropoly oligosaccharide and an application thereof in improving plant disease resistance. The heteropoly oligosaccharide includes seven D-glucose residues and one D-galactose residue.

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

Abstract: Exemplary methods of semiconductor processing may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by a first amount of hydrogen incorporation. The methods may include performing a beamline ion implantation process or plasma doping process on the layer of amorphous silicon. The methods may include removing hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation.