Abstract: Thicker hardmasks are typically needed for etching deeper capacitor holes in a DRAM structure. Instead of increasing the hardmask thickness, hardmasks may instead be formed with an increased etch selectivity relative to the underlying semiconductor structure. For example, boron-based hardmasks may be formed that include a relatively high percentage of boron (e.g., greater than 90%). The etch selectivity of the hardmask may be improved by performing an ion implant process using different types of ions. The ion implant may take place before or after opening the hardmask with the pattern for the DRAM capacitor holes. Some designs may also tilt the semiconductor substrate relative to the ion implant process and rotate the substrate to provide greater ion penetration throughout a depth of the openings in the hardmask.

Abstract: Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. The methods may include generating plasma effluents of the silicon-containing precursor in the processing region. The methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. Methods include soaking the deposited silicon-containing material with a second silicon-containing material.

Abstract: Exemplary semiconductor processing methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a boron-containing precursor into the substrate processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-silicon-containing layer on a substrate in the substrate processing region of the semiconductor processing chamber. The boron-and-silicon-containing layer may be characterized by an increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer opposite the first surface. A flow rate of the boron-containing precursor may be increased during the deposition of the boron-and-silicon-containing layer.

Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

Abstract: The present disclosure provides a display panel, a manufacturing method thereof and a display device. The display panel includes: a base substrate including a display region, a wiring region surrounding the display region and a bonding region located at a side of the display region; a light-emitting element arranged in the display region and including a cathode; and a first line and at least one second line in the wiring region, the first line being coupled to the cathode of the light-emitting element, two ends of the second line being coupled to the first line in the bonding region, and the first line and the second line being coupled through at least two via holes at an opposite side of the bonding region.

Abstract: Systems and methods are provided for monitoring fluid line in a vehicle configured to remove heat from an electronic device with a coolant. The systems may include a pump configured to flow the coolant through the fluid line, a sensing device configured to sense vibrations in the fluid line, and a controller that is configured to: receive vehicle state data, determine a recommended flow rate of the coolant based on the vehicle state data, determine vibration signal thresholds based on the vehicle state data and the recommended flow rate, initiate operation of the pump to flow the coolant at the recommended flow rate, determine whether the flow of the coolant is stable, receive sensor data indicative of the vibrations, determine signal characteristic(s) of the vibrations while the flow is stable, and initiate a remedial action based on a comparison of the signal characteristic(s) to the vibration signal thresholds.

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

Abstract: The present disclosure provides a display apparatus, a display panel and a preparation method. The display panel includes a base substrate, a driving circuit provided on a side of the base substrate and a multi-layer metal layer: the base substrate includes a display region and a peripheral region located on a periphery of the display region; the driving circuit includes a peripheral circuit and a pixel circuit, the peripheral circuit is located at the peripheral region, the pixel circuit is located at the display region, and the peripheral circuit is connected with the pixel circuit and configured to provide a driving signal to the pixel circuit; the peripheral circuit includes a plurality of signal lines distributed in at least two metal layers.

Abstract: Disclosed are a semantic matching and retrieval method and apparatus. The semantic matching and retrieval method includes steps of obtaining both the vector representation of a query text and the vector representation of a document text; obtaining the final vector representation of the query text; obtaining the final vector representation of the document text; calculating, based on the final vector representation of the query text and the final vector representation of the document text, the similarity score between the query text and the document text; and selecting, based on the similarity scores between the query text and a plurality of document texts, a document text matching the query text from the plurality of document texts.

Abstract: In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.

Abstract: A method and an apparatus for machine reading comprehension, and a non-transitory computer-readable recording medium are provided. In the method, a paragraph-question pair is obtained, and subword vectors corresponding to subwords in the paragraph-question pair are generated. Then, for each subword, relative positions of the subword with respect to the other subwords are determined based on distances, and self-attention information of the subword in a first part and mutual attention information of the subword in a second part are calculated by using the relative positions and the subword vector. Then, a fusion vector of the subword is generated based on the self-attention information and the mutual attention information. Then, the fusion vectors of the subwords are input to a decoder of a machine reading comprehension model so as to obtain an answer predicted by the decoder.

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-halogen-containing precursor and a metal-containing precursor. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

Abstract: Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH4. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber, the deposition precursors may be or include a tungsten-containing precursor. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the one or more deposition precursors in the processing region. The plasma may be at least partially formed by an RF power operating at less than or about 3,000 W and at a pulsing frequency less than or about 100,000 Hz. The methods may include forming a layer of material on the substrate. The layer of material may be or include a tungsten-containing material.

Abstract: Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.