Patents by Inventor Ryoji Suzuki

Ryoji Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120292486
    Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
    Type: Application
    Filed: August 2, 2012
    Publication date: November 22, 2012
    Applicant: Sony Corporation
    Inventors: Takahisa Ueno, Kazuya Yonemoto, Ryoji Suzuki, Koichi Shiono
  • Publication number: 20120273912
    Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
    Type: Application
    Filed: July 3, 2012
    Publication date: November 1, 2012
    Applicant: Sony Corporation
    Inventors: Ryoji SUZUKI, Keiji MABUCHI, Tomonori MORI
  • Publication number: 20120267692
    Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
    Type: Application
    Filed: July 3, 2012
    Publication date: October 25, 2012
    Applicant: Sony Corporation
    Inventors: Ryoji Suzuki, Keiji Mabuchi, Tomonori Mori
  • Publication number: 20120267691
    Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
    Type: Application
    Filed: July 3, 2012
    Publication date: October 25, 2012
    Applicant: Sony Corporation
    Inventors: Ryoji Suzuki, Keiji Mabuchi, Tomonori Mori
  • Patent number: 8284284
    Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
    Type: Grant
    Filed: December 29, 2003
    Date of Patent: October 9, 2012
    Assignee: Sony Corporation
    Inventors: Takahisa Ueno, Kazuya Yonemoto, Ryoji Suzuki, Koichi Shiono
  • Publication number: 20120224090
    Abstract: Disclosed is a solid-state imaging device which includes an imaging region including pixels arranged two-dimensionally, each of the pixels including a photoelectric conversion element and a plurality of pixel transistors for reading out signals outputted from the photoelectric conversion element, and wirings formed on stacked layers for driving each of the pixels. A shading part between the pixels is formed by combining first and second wirings selected from the wirings.
    Type: Application
    Filed: March 13, 2012
    Publication date: September 6, 2012
    Inventors: Takashi Abe, Ryoji Suzuki
  • Publication number: 20120175719
    Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
    Type: Application
    Filed: February 14, 2012
    Publication date: July 12, 2012
    Applicant: Sony Corporation
    Inventors: Ryoji Suzuki, Keiji Mabuchi, Tomonori Mori
  • Patent number: 8179461
    Abstract: A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.
    Type: Grant
    Filed: September 8, 2009
    Date of Patent: May 15, 2012
    Assignee: Sony Corporation
    Inventors: Ryoji Suzuki, Takayuki Toyama, Koji Mishina, Hiroyuki Tsuchiya
  • Publication number: 20120089929
    Abstract: A UI specification creating apparatus displays a format that allows information relevant to a condition of an element displayed on an operation screen of a user interface to be activated and information concerning content of process that the element operates to be described in a given form and receives descriptions relevant to specifications of the element based on the format. The UI specification creating apparatus then displays the operation screen of the user interface and carries out a simulation of an operation of the element displayed on the operation screen of the user interface based on the information relevant to the condition of the element to be activated and the information concerning the content of process that the element operates received.
    Type: Application
    Filed: September 29, 2011
    Publication date: April 12, 2012
    Applicants: DENSO CORPORATION, FUJITSU LIMITED
    Inventors: Yoshiyuki OHTA, Shun-ichi Hirabayashi, Akira Shikasho, Ryoji Suzuki, Kazuhiko Sugimoto
  • Publication number: 20120075509
    Abstract: Provided is a method of manufacturing a solid-state imaging device including: forming a first pattern having an independent island shape configured by an optical filter material on some of photoelectric conversion units among a plurality of photoelectric conversion units arranged on the surface of a substrate; forming a mixed color prevention layer on a side wall of the first pattern; and forming a second pattern having an independent island shape configured by an optical filter material on the rest of the photoelectric conversion units among the plurality of photoelectric conversion units while the mixed color prevention layer is closely disposed between the first pattern and the second pattern.
    Type: Application
    Filed: September 21, 2011
    Publication date: March 29, 2012
    Applicant: SONY CORPORATION
    Inventors: Tomomi Ito, Ryoji Suzuki, Taichi Natori
  • Patent number: 8134625
    Abstract: Disclosed is a solid-state imaging device which includes an imaging region including pixels arranged two-dimensionally, each of the pixels including a photoelectric conversion element and a plurality of pixel transistors for reading out signals outputted from the photoelectric conversion element, and wirings formed on stacked layers for driving each of the pixels. A shading part between the pixels is formed by combining first and second wirings selected from the wirings.
    Type: Grant
    Filed: December 15, 2008
    Date of Patent: March 13, 2012
    Assignee: Sony Corporation
    Inventors: Takashi Abe, Ryoji Suzuki
  • Patent number: 8073704
    Abstract: A plurality of pairs of segments to be weighted/added are selected non-linearly with respect to a time axis of audio data. A speed conversion is achieved by performing the weighting/addition on the selected pairs of segments. The non-linear selection is performed by (a) obtaining all possible pairs of segments constituting the audio data, (b) calculating a degree of similarity pertaining to each possible pair, (c) ranking the all possible pairs of segments according to the degrees of similarity, and (d) overlapping at least one of the all possible pairs of segments that holds the highest degree of similarity.
    Type: Grant
    Filed: January 23, 2007
    Date of Patent: December 6, 2011
    Assignee: Panasonic Corporation
    Inventor: Ryoji Suzuki
  • Publication number: 20110292262
    Abstract: A solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
    Type: Application
    Filed: August 10, 2011
    Publication date: December 1, 2011
    Applicant: SONY CORPORATION
    Inventors: Takahiro Abiru, Ryoji Suzuki, Eiji Makino, Takayuki Usui
  • Publication number: 20110285901
    Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
    Type: Application
    Filed: May 10, 2011
    Publication date: November 24, 2011
    Applicant: Sony Corporation
    Inventors: Takashi Abe, Ryoji Suzuki, Yoshiharu Kudoh
  • Patent number: 8031248
    Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
    Type: Grant
    Filed: September 20, 2004
    Date of Patent: October 4, 2011
    Assignee: Sony Corporation
    Inventors: Takahisa Ueno, Kazuya Yonemoto, Ryoji Suzuki, Koichi Shiono
  • Patent number: 8031246
    Abstract: An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
    Type: Grant
    Filed: May 13, 2008
    Date of Patent: October 4, 2011
    Assignee: Sony Corporation
    Inventors: Eiji Makino, Takahiro Abiru, Ryoji Suzuki, Masahiro Itoh
  • Patent number: 8023024
    Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
    Type: Grant
    Filed: September 20, 2004
    Date of Patent: September 20, 2011
    Assignee: Sony Corporation
    Inventors: Takahisa Ueno, Kazuya Yonemoto, Ryoji Suzuki, Koichi Shiono
  • Patent number: 8013931
    Abstract: There is provided a solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: September 6, 2011
    Assignee: Sony Corporation
    Inventors: Takahiro Abiru, Ryoji Suzuki, Eiji Makino, Takayuki Usui
  • Publication number: 20110211101
    Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
    Type: Application
    Filed: May 10, 2011
    Publication date: September 1, 2011
    Applicant: Sony Corporation
    Inventors: Takahisa Ueno, Kazuya Yonemoto, Ryoji Suzuki, Koichi Shiono
  • Publication number: 20110205415
    Abstract: An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
    Type: Application
    Filed: May 4, 2011
    Publication date: August 25, 2011
    Applicant: SONY CORPORATION
    Inventors: Eiji Makino, Takahiro Abiru, Ryoji Suzuki, Masahiro Itoh