Abstract: An optometry apparatus includes; a housing accommodating a concave mirror disposed on a reference axis; and a display disposed outside the housing and out of the reference axis for projecting a target light flux onto the concave mirror. The concave mirror is configured to reflect the target light flux output from the display toward an examinee's eye along the reference axis.

Abstract: An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).

Abstract: Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse ?Vn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

Abstract: A solid-state imaging device with (a) a substrate, (b) a plurality of photoelectric conversion elements carried on the substrate, (c) a respective plurality of color filters respectively overlying the photoelectric conversion elements, and (d) a mixed color prevention layer between the color filters, the mixed color prevention layer having a reflectivity higher than any of the those of the color filters or an index of refraction lower than that of any of those of the color filters.

Abstract: An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).

Abstract: A UI specification creating apparatus displays a format that allows information relevant to a condition of an element displayed on an operation screen of a user interface to be activated and information concerning content of process that the element operates to be described in a given form and receives descriptions relevant to specifications of the element based on the format. The UI specification creating apparatus then displays the operation screen of the user interface and carries out a simulation of an operation of the element displayed on the operation screen of the user interface based on the information relevant to the condition of the element to be activated and the information concerning the content of process that the element operates received.

Abstract: Provided is a method of manufacturing a solid-state imaging device including: forming a first pattern having an independent island shape configured by an optical filter material on some of photoelectric conversion units among a plurality of photoelectric conversion units arranged on the surface of a substrate; forming a mixed color prevention layer on a side wall of the first pattern; and forming a second pattern having an independent island shape configured by an optical filter material on the rest of the photoelectric conversion units among the plurality of photoelectric conversion units while the mixed color prevention layer is closely disposed between the first pattern and the second pattern.

Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Abstract: A solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.

Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Abstract: An input/output apparatus includes a speaker, a microphone, an adaptive filter circuit and a control circuit. The speaker is configured to output audio based on a voice-receiving signal. The microphone is configured to produce a voice-transmitting signal based on gathered audio. The adaptive filter circuit is configured to produce a residual signal based on a pseudo echo signal and a amplified voice-transmitting signal. The pseudo echo signal is produced from the voice-receiving signal and a transfer coefficient which expresses audio transfer properties between the speaker and the microphone. The amplified voice-transmitting signal is produced by causing a microphone amplification circuit to amplify the voice-transmitting signal. The control circuit is configured to stop output of the residual signal from the adaptive filter circuit during at least one of the speaker and the microphone is muted.

Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer, wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

Abstract: A digital data processor which receives an N-bit input signal from a data source and converts the N-bit input signal into an M-bit output signal, the M-bit being larger than the N-bit. The digital data processor includes: an weighted addition circuit which is operable to perform weighted addition on at least the input signal and a signal being time-shifted with respect to the input signal and output as a weighted added input signal; an arithmetic shift circuit which is operable to perform an arithmetic rightward shift operation on the weighted added input signal for a predetermined number of shifts and output as a processed input signal; a bit extension circuit which is operable to attach a predetermined bits to an LSD side of the input signal to generate an intermediate signal of M bits; and an addition circuit which is operable to perform addition of the intermediate signal and the processed input signal so as to generate the M-bit output signal.

Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

Abstract: The present invention provides an information embedding apparatus that is capable of preventing playback stop of a content that has been shot without intention of misuse. The information embedding apparatus comprises: an acquisition unit operable to acquire the content that is played back along the playback time-line; a watermark generating unit operable to generate the watermarks such that values held by the watermarks vary according to a first rule, the first rule showing that the values should vary according to a sequential order on the playback time-line; and an embedding unit operable to embed two or more of the watermarks into the content while keeping the sequential order.

Abstract: A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.

Abstract: An audio mixing device that can get simpler processing done safely without depending on the property of an input signal is provided.

Abstract: Arranged are a selective reduction catalyst for reacting NOx in exhaust gas 2 with ammonia, an exhaust passage 5 for guiding the exhaust gas 2 to the selective reduction catalyst, and a urea water addition unit 4 incorporated in the exhaust passage 5 for adding urea water 3 into the exhaust gas 2. A portion of the exhaust passage 5 adjacent to an added position of the urea water 3 is constituted by a divisional piece 5a made of material having higher corrosive resistance to a substance produced by addition of the urea water 3 than that of a material constituting the remaining portion of the exhaust passage 5 other than the adjacent portion.