Abstract: An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each of the semiconductor modules includes a plurality of switching device chips and at least one diode chip formed on a metal substrate. Electrode plates are provided in locations of the module adjacent to the switching device chips and the diode chips to facilitate connection of the electrodes of the respective chips to one another and to the outside of the module.

Abstract: In a process for producing a vinylidene fluoride resin by polymerizing vinylidene fluoride or a mixture of vinylidene fluoride and a vinyl monomer copolymerizable with vinylidene fluoride, a portion of an iodide compound represented by the formula: X-R.sub.f -X wherein R.sub.f is a divalent organic group containing at least two divalent fluoroalkyl ether groups: and X's are independently an iodine atom or a fluorine atom, provided that at least one of the X's is an iodine atom; is added to start the polymerization, and the remainder of the iodide compound is further added dividedly at least twice in the course of the polymerization. This process enables to obtain a vinylidene fluoride resin having a viscosity-average molecular weight of 150,000 or more and also having a superior water repellency. This resin has good mechanical strength and release properties and also can be well processed into films.

Abstract: A silacyclohexane compound represented by the following general formula (I). ##STR1## In this formula, R denotes a linear-chain alkyl group with 1-10 carbon atoms, a branched-chain alkyl group with 3-8 carbon atoms, a mono- or di-fluoroalkyl group with 1-10 carbon atoms, an alkoxyalkyl group with 2-7 carbon atoms, or an alkenyl group with 2-8 carbon atoms. ##STR2## is trans-1-silacyclohexylene or trans-4-silacyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3. X denotes a R, OR, CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, --(O).sub.m --CY.sub.1 .dbd.CX.sub.1 X.sub.2 (m denotes 0 or 1, Y.sub.1 and X.sub.1 respectively denote H, F or Cl, and X.sub.2 denotes F or Cl) or --O--C.sub.r F.sub.s H.sub.2r+1-s is (r denotes an integral of 2 to 4 and s denotes an integral of 1 to 7) group. Y denotes H or F. Z denotes H or F.

Abstract: Liquid crystal compositions which can improve the low .DELTA.n (refractive index anisotropy) of conventional liquid crystal compositions containing a silacyclohexane compound and which retain a low viscosity and hence show no decrease in response speed. Liquid crystal compositions having a high .DELTA.n of 0.13 to 0.25, a low viscosity of 30 cp or less, a low threshold voltage and a high voltage holding ratio can be obtained by adding thereto, as a required component, a compound having both a silacyclohexane ring and a tolan structure, or a miture of a compound having a silacyclohexane ring and a compound having a tolan structure.

Abstract: An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise.

Abstract: An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.

Abstract: A silacyclohexane compound represented by the following general formula (I). ##STR1## In this formula, R denotes a linear-chain alkyl group with a carbon number of 1-10, a mono- or di- fluoro-alkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, or an alkenyl group with a carbon number of 2-8. ##STR2## denotes trans-1-sila-1,4-cyclohexylene or trans-4-sila-1,4-cyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3. X denotes a CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, R or OR group (R is the same as defined in the general formula (I)). Y.sub.2 and Z denote H or F, independently to each other. Y.sub.1 denotes H, F or Cl.

Abstract: A silacyclohexanone compound represented by the following general formula (I). ##STR1## wherein Ar denotes a phenyl group or a tolyl group. R denotes a tolyl group, a linear-chain alkyl group with a carbon number of 2-10, a mono- or di-fluoroalkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8 or an alkoxyalkyl group with a carbon number of 2-7. Also, a method of manufacturing silacyclohexane-type liquid crystal compounds represented by the general formula (II) ##STR2## and the general formula (III) ##STR3## which are derived from this compound.

Abstract: A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.

Abstract: A high reliability electric power control semiconductor device with a prolonged product lifetime has been provided by successfully suppressing the metal support plate or the metal heat dissipation plate from warping due to the thermal stress during bonding so as to prevent the occurrences of cracks and gaps in the brazing fillers in the bonded layers between the metal heat dissipation plate or the metal support plate and the insulation plate in the semiconductor device comprising the semiconductor elements, metal heat dissipation plate, thermal stress buffer, insulation plate, and the metal support plate, wherein at least one of the metal heat dissipation plate and the metal support plate comprises a copper alloy of which a softening temperature at which a hot hardness of which becomes 1/2 of the hardness at the room temperature is 350.degree. C. or more.

Abstract: A semiconductor module having heat sink plates and an insulating plate laminated under the semiconductor chips, wherein the thickness of the support base plate is set to be 2.5 times in thickness of the insulating plate, which is the maximum thickness among the heat sink plates and the insulating plate laminated in the semiconductor module, so that the thermal fatigue lives of the solder layers are balanced, and the life of the whole semiconductor module can be prolonged.

Abstract: A liquid crystal composition comprising a silacyclohexane compound represented by the following formula (I): ##STR1## wherein R and R' denote an alkyl group, a mono- or di-fluoroalkyl group, an alkoxyalkyl group or an alkenyl group; at least one of ##STR2## denotes a silacyclohexylene group whose silicon at positions 1 or 4 has a substitutional group of H, F, Cl of CH.sub.3, and the other denotes a silacyclohexylene group whose silicon at positions 1 or 4 has a substitutional group of H, F, Cl or CH.sub.3 or a cyclohexylene group; and 0-2 of the substitutional groups X on the aromatic rings denote F and the remaining X's denote H.

Abstract: A silacyclohexane compound of formula (I): ##STR1## wherein R denotes a linear-chain alkyl group, a mono- or di-fluoroalkyl group, a branched-chain alkyl group, an alkoxyalkyl group, or an alkenyl group: at least one of ##STR2## denotes a 1-sila-1,4-cyclohexylene or a 4-sila-1,4-cyclohexylene group whose silicon at position 1 or 4 is H, F, Cl or CH.sub.3, and the other denotes a 1,4-cyclohexylene group, a 1-sila-1,4-cyclohexylene or a 4-sila-1,4-cyclohexylene group whose silicon at position 1 or 4 is H F, Cl or CH.sub.3 ; X denotes a substitutional group at an equatorial position, specifically CN, an alkyl group with its end group replaced by a trifluoromethyl group, an alkoxy group, an alkanoyloxy group, an alkoxycarbonyl group, a linear-chain alkyl group, or an alkoxyalkyl group; Y denotes a group at an axial position, specifically H or CN when Y is connected to a carbon atom in said (B) group or H, F, Cl or CH.sub.3 when Y is connected to a silicon atom in said (B) group.

Abstract: A liquid crystal active matrix display device includes a first substrate having a thin film transistor formed thereon. A light-screening film 1 is located on the first substrate in a manner to be overlapped with an ITO. The display device includes a second substrate having a color filter and a light-screening film 2 formed thereon. The second substrate is opposed to the first substrate. The light-screening film 2 extends from the uncontrollable area by a certain value depending on a voltage from the external, resulting in improving a numerical aperture.

Abstract: A silacyclohexane compound represented by the following general formula (I). ##STR1## In this formula, R denotes hydrogen, a linear-chain alkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, a fluoroalkyl group with a carbon number of 1-10 in which one or two hydrogen atoms are substituted by florine atom(s), or an alkenyl group with a carbon number of 2-8. For the groups ##STR2## at least one of these is a trans-1-sila-1,4-cyclohexylene or trans-4-sila-1,4-cyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3, and the other denotes a trans-1,4-cyclohexylene group. X denotes a CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, R or OR group (R is the same as defined earlier). Y denotes H or F. Z denotes H or F.

Abstract: There is provided a silacyclohexane compound and method of making same. The silacyclohexane compound has the following formula (1): ##STR1## wherein R denotes a linear-chain alkyl group with a carbon number of 1-10, a mono- or di-fluoroalkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, or an alkenyl group with a carbon number of 2-8, ##STR2## denotes a trans-1-sila-1,4-cyclohexylene or a trans-4-sila-1,4-cyclohexylene group having silicon at positions 1 or 4 with substitutional group(s) of H, F, C1 or CH.sub.3 ; n denotes 0 or 1; L.sub.1 and L.sub.2 independently denote H.F, C1, CN or CH.sub.3 ; L.sub.3 denotes F; m denotes O, 1 or 2; and X denotes H, CN, F, C1, CF.sub.3, CC1F.sub.2, CHFC1, OCC1F.sub.2, OCHFC1, OCHF.sub.2, OCF.sub.3, R or OR group.

Abstract: A silacyclohexane compound represented by the following general formula (1): ##STR1## wherein R denotes a linear-chain alkyl group with a carbon number of 1-10, a mono- or di-fluoroalkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, or an alkenyl group with a carbon number of 2-8, and at least one of ##STR2## denotes a trans-1-sila-1,4-cyclohexylene or a trans-4-sila-1,4-cyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3 and the other is a trans-1,4-cyclohexylene group, X denotes a CN, F, F, Cl, CF.sub.3, OCF.sub.3, OCHF.sub.2, OCHFCl, CF.sub.2 Cl, OCF.sub.2 Cl, R or OR group, Z.sub.1 denotes H, F or Cl, and Z.sub.2 denotes H or F.

Abstract: A silacyclohexane compound represented by the following general formula (I). ##STR1## In this formula, R denotes a linear-chain alkyl group with a carbon number of 1-10, a mono- or di-fluoroalkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, or an alkenyl group with a carbon number of 2-8. ##STR2## denotes a trans-1-silacyclohexylene or trans-4-silacyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3. X denotes a CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, R or OR group. Y denotes H or F. Z denotes H or F.

Abstract: An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.

Abstract: A silacyclohexane compound represented by the following general formula (I). ##STR1## R denotes hydrogen, a linear-chain alkyl group with a carbon number of 1-10, a branched-chain alkyl group with a carbon number of 3-8, an alkoxyalkyl group with a carbon number of 2-7, or an alkenyl group with a carbon number of 2-8. For ##STR2## at least one of these is trans-1-silacyclohexylene or trans-4-silacyclohexylene group whose silicon at position 1 or position 4 has a substitutional group(s) of H, F, Cl or CH.sub.3, and the other denotes trans-1,4-cyclohexylene group. X denotes a CN, F, Cl, CF.sub.3, CF.sub.2 Cl, CHFCl, OCF.sub.3, OCHF.sub.2, OCF.sub.2 Cl, OCHFCl, R or OR group.