Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being

Abstract: A method of producing a vinyl-based polymer is provided in which the blocking of piping resulting from solidification of a reaction inhibitor does not occur even if the operation of supplying the reaction inhibitor is conducted at a low temperature. This method involves the polymerization of a vinyl monomer via a radical reaction, wherein a reaction inhibitor formed from a compound represented by a general formula (1), shown below, is added to the polymerization system in the form of an aqueous dispersion, either prior to commencement of the polymerization, during the polymerization, or following completion of the polymerization, depending on the effect desired.

Abstract: A power semiconductor module comprises a metal base, plural wiring substrates provided on said the base, a first wiring substrate of the wiring substrates having a power circuit portion including a power semiconductor device, and substrate containing portions having a resin portion in which one of the wiring substrates is contained. The one of the wiring substrates is positioned in self-alignment on the metal substrate on the basis of an inner wall of the resin portion of the substrate-containing portion.

Abstract: Provided are a composite material excellent in plastic workability, a method of producing the composite material, a heat-radiating board of a semiconductor equipment, and a semiconductor equipment to which this heat-radiating board is applied.

Abstract: Provided are a composite material excellent in plastic workability, a method of producing the composite material, a heat-radiating board of a semiconductor equipment, and a semiconductor equipment to which this heat-radiating board is applied.

Abstract: An optical pickup supporting device comprises a sheet metal base (10), a main track (41) for guiding an optical pickup so that the optical pickup (30) is moved in a predetermined direction above the base, and a sub track (15) for guiding the optical pickup in cooperation with the main track. The sub track is formed by a part of the base.

Abstract: A process for producing a vinyl chloride polymer, including the steps of (a) subjecting a vinyl chloride monomer alone or a monomer mixture containing a vinyl chloride, to suspension polymerization in water; (b) subjecting the resultant vinyl chloride polymer slurry to stripping to remove an unreacted monomer remaining therein; and (c) dehydrating the polymer slurry having been subjected to stripping. In the polymerization step (a), the ratio of water/monomer is set in a weight ratio of from 0.80 to 1.50, and the viscosity at 20° C. of the polymer slurry to be fed to the stripping step is previously kept adjusted to 0.30 Pa·s or lower. In the stripping step (c), the residual unreacted monomer in the polymer slurry can efficiently be removed using steam in a smaller quantity, thus the vinyl chloride polymer can be produced at a high productivity.

Abstract: In a semiconductor module comprising, a semiconductor element, an electrically insulating base having an outer surface to be connected to an electrically grounded surface, and an inner surface on which the semiconductor element is arranged, an electrically insulating cover covering the semiconductor element on the inner surface, and first and second electrically conductive members each of which is connected to the semiconductor element and extends to the exterior of the semiconductor module through the electrically insulating cover, a part of each of the first and second electrically conductive members on the exterior of the semiconductor module is arranged away from the outer surface to electrically isolate the part of the each of the first and second electrically conductive members from the electrically grounded surface.

Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being

Abstract: A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.

Abstract: A diplexer employed in mobile communications equipment such mobile phones which can divide signals into two channels with a simple configuration without interfering the other band. In this diplexer, an inductor 105 is connected between a &pgr;-type three-stage one polar low-pass filter 115 and a common terminal 113 as a first matching circuit, and a capacitor 106A is connected between a one polar band-pass filter 116 and a common terminal 113 as a second matching circuit so that interference with the other band can be prevented and the higher harmonics can be sufficiently attenuated with simple configuration.

Abstract: A semiconductor module has a plurality of power semiconductor devices mounted on a substrate, and a metal foil for wiring is mounted on the substrate so that an asymmetric unit arrangement of the semiconductor devices is formed. In the device, all of the units are arranged in the same direction on the substrate, and all of the units are electrically connected with electrode terminal feet, and the electrode terminal feet are electrically connected with linkage terminal foot. The electrode terminal feet are disposed with a certain interval.

Abstract: A liquid crystal active matrix display device includes a first substrate having a thin film transistor formed thereon. A light-screening film 1 is located on the first substrate in a manner to be overlapped with an ITO. The display device includes a second substrate having a color filter and a light-screening film 2 formed thereon. The second substrate is opposed to the first substrate. The light-screening film 2 extends from the uncontrollable area by a certain value depending on a voltage from the external, resulting in improving a numerical aperture.

Abstract: A power semiconductor module comprises a metal base, plural wiring substrates provided on said the base, a first wiring substrate of the wiring substrates having a power circuit portion including a power semiconductor device, and substrate containing portions having a resin portion in which one of the wiring substrates is contained. The one of the wiring substrates is positioned in self-alignment on the metal substrate on the basis of an inner wall of the resin portion of the substrate-containing portion.

Abstract: When oganohalosilanes are prepared by charging a reactor with a contact mass containing metallic silicon and a copper catalyst and introducing an organohalide-containing gas into the reactor to effect the direct reaction, 50-10,000 ppm of bronze phosphide is added to the contact mass. The invention is successful in efficiently producing organohalosilanes in a high STY and low T/D.

Abstract: A process for producing a vinyl chloride polymer, including the steps of (a) subjecting a vinyl chloride monomer alone or a monomer mixture containing a vinyl chloride, to suspension polymerization in water; (b) subjecting the resultant vinyl chloride polymer slurry to stripping to remove an unreacted monomer remaining therein; and (c) dehydrating the polymer slurry having been subjected to stripping. In the polymerization step (a), the ratio of water/monomer is set in a weight ratio of from 0.80 to 1.50, and the viscosity at 20° C. of the polymer slurry to be fed to the stripping step is previously kept adjusted to 0.30 Pa.s or lower. In the stripping step (c), the residual unreacted monomer in the polymer slurry can efficiently be removed using steam in a smaller quantity, thus the vinyl chloride polymer can be produced at a high productivity.

Abstract: A liquid crystal active matrix display device includes a first substrate having a thin film transistor formed thereon. A light-screening film 1 is located on the first substrate in a manner to be overlapped with an ITO. The display device includes a second substrate having a color filter and a light-screening film 2 formed thereon. The second substrate is opposed to the first substrate. The light-screening film 2 extends from the uncontrollable area by a certain value depending on a voltage from the external, resulting in improving a numerical aperture.

Abstract: Suspension polymerization of vinyl chloride in an aqueous medium is carried out in the presence of an oil-soluble polymerization initiator which is a combination of diacylperoxide compound and t-hexylperoxy diglycolate, the former having a half-life period of 10 hours at 30 to 50.degree. C. in benzene (0.05 mol/L). The resulting polymer gives a high-quality molded product which is free of odor and less liable to initial discoloration.

Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being

Abstract: A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.