Abstract: The present invention relates to a ceramic laminated device including a dielectric ceramic and an Ag electrode. In a dielectric ceramic that can be sintered at low temperatures and has a high dielectric constant and Q value, reactivity between the ceramic and Ag during sintering is suppressed low and segregation of specific elements in the proximity of the electrode is controlled. Thus, a filter having a high Q value and low loss is produced stably. For this purpose, in a ceramic laminated body including at least a ceramic and a Si-containing glass, a ratio of A/B, i.e. a ratio of a Si element concentration (A) within a range at a distance of 5 ?m or smaller from the Ag electrode to a Si element concentration (B) within a range at a distance larger than 5 ?m from the Ag electrode, is set equal to or smaller than 2.

Abstract: A dielectric porcelain composition of the present invention includes a first component and second component. If the first component is represented by the general formula of xBaO—yNd2O3-zTiO2-wBi2O3 (provided that x+y+z+w=100), x, y, z, and w satisfy 12?x?16, 12?y?16, 65?z?69, and 2?w?5, respectively. The second component includes 30 to 37 wt % of BaO, 33 to 46 wt % of SiO2, 8 to 12 wt % of La2O3, 3 to 7 wt % of Al2O3, 0 to 1 wt % of SrO, 0 to 10 wt % of Li2O, 0 to 20 wt % of ZnO, and 7 wt % or less of B203. The compounding ratio of the second component is between 10 wt % and 30 wt % when the sum of the first and second components is 100. In addition, 0.1 to 1 parts by weight of Li2O and 3 to 10 parts by weight of ZnO, relative to 100 parts by weight of the sum of the first and second components, is also contained as a third component. An average particle diameter of the dielectric mixed powder forming dielectric porcelain composition before firing is 0.9 ?m or less.

Abstract: A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.

Abstract: A power converter of the present invention includes at least two power semiconductor modules having a plurality of switching devices, at least two cooling jackets having a coolant path for cooling the plurality of power semiconductor modules and equipped with the power semiconductor modules, a capacitor module interposed between the at least two cooling jackets, and a connector provided in the at least two cooling jackets for connecting the coolant path.

Abstract: Technology leading to a size reduction in a power conversion apparatus comprising a cooling function and technology relating to enhancing productivity and enhancing reliability necessary for commercial production are provided. Series circuits comprising an upper arm and lower arm of an inverter circuit are built in a single semiconductor module 500. The semiconductor module has cooling metal on two sides. An upper arm semiconductor chip and lower arm semiconductor chip are wedged between the cooling metals. The semiconductor module is inserted inside a channel case main unit 214. A DC positive electrode terminal 532, a DC negative electrode terminal 572, and an alternating current terminal 582 of a semiconductor chip are disposed in the semiconductor module. The DC terminals 532 and 572 are electrically connected with a terminal of a capacitor module. The alternating current terminal 582 is electrically connected with a motor generator via an AC connector.

Abstract: First and second bases and composing a coolant path structure are arranged at the middle stage of the power converter, and semiconductor modules and a capacitor are arranged on both surfaces of the coolant path structure. Furthermore, through-holes are formed in the first and second bases, and cables of DC and AC circuits are laid via the through-holes.

Abstract: A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

Abstract: A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

Abstract: A laminated ceramic component includes a first laminating sheet, a second laminating sheet, a first electrode pattern and a second electrode pattern. The first and the second electrode patterns are located between the first and the second laminating sheets. The second electrode pattern is wider and thinner than the first electrode pattern.

Abstract: An inverter apparatus includes a liquid path in which cooling water flows, and in which the cooling water performs cooling at a cooling part located directly underneath the power circuit part of the inverter apparatus. The liquid path includes a first partial structure part formed between a feed pipe and the cooling part, and having a liquid path cross-sectional profile that is gradually reduced in the short-side direction of the cooling part and that is gradually enlarged in the long-side direction thereof; and a second partial structure part formed between the cooling part and a drain pipe, and having a liquid path cross-sectional profile that is gradually enlarged from the short-side of the cooling part and that is gradually reduced from the long-side thereof.

Abstract: An inverter apparatus includes a liquid path in which cooling water flows, and in which the cooling water performs cooling at a cooling part located directly underneath the power circuit part of the inverter apparatus. The liquid path includes a first partial structure part formed between a feed pipe and the cooling part, and having a liquid path cross-sectional profile that is gradually reduced in the short-side direction of the cooling part and that is gradually enlarged in the long-side direction thereof; and a second partial structure part formed between the cooling part and a drain pipe, and having a liquid path cross-sectional profile that is gradually enlarged from the short-side of the cooling part and that is gradually reduced from the long-side thereof.

Abstract: By activating aluminum fine particles obtained by milling aluminum alloy in water, reactivity of the aluminum fine Particles at low temperature is improved. The activation comprises a thermal shock treatment wherein the aluminum fine particles are repeatedly heated and cooled down rapidly, and subsequently these activated aluminum fine particles are stored in a refrigerator. By reaction between the activated aluminum fine particles and water molecules, a large amount of hydrogen gas can be generated at room temperature, therefore hydrogen gas or fuel for a portable-type fuel cells can be produced in large quantities at room temperature in a short period of time.

Abstract: A module includes a ceramic substrate, first and second electrodes provided on the ceramic substrate, a component having third and fourth electrodes connected to the first and second electrodes, respectively, and a resin filled in a space between the component and the ceramic substrate. The ceramic substrate has a surface thereof having a recess formed therein. The first and second electrodes are provided on the surface of the ceramic substrate so that the recess is located between the first and second electrodes. The component is located over the recess and spaced from the ceramic substrate with a space including the recess. The space including the recess is filled with the resin. The module allows each component to be surface mounted at higher bonding strength, thus preventing short-circuit between the electrodes on the substrate and improving the operation reliability.

Abstract: The object is to provide a method for drying and storing activated aluminum fine particles which can be a hydrogen source for fuel cells for a long term without being deactivated. A thermal shock treatment as an activation of the aluminum fine particles, which repeats rapid heating and cooling, is performed to aluminum fine particles obtained by milling aluminum alloy; moisture contained in the activated aluminum fine particles is filtrated; said aluminum fine particles are pre-frozen; and the aluminum fine particles are freeze-dried and then stored in nitrogen atmosphere or vacuum-packed.

Abstract: The object is to provide a method for drying and storing activated aluminum fine particles which can be a hydrogen source for fuel cells for a long term without being deactivated. A thermal shock treatment as an activation of the aluminum fine particles, which repeats rapid heating and cooling, is performed to aluminum fine particles obtained by milling aluminum alloy; moisture contained in the activated aluminum fine particles is filtrated; said aluminum fine particles are pre-frozen; and the aluminum fine particles are freeze-dried and then stored in nitrogen atmosphere or vacuum-packed.

Abstract: A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Abstract: An inverter apparatus includes a liquid path in which cooling water flows, and in which the cooling water performs cooling at a cooling part located directly underneath the power circuit part of the inverter apparatus. The liquid path includes a first partial structure part formed between a feed pipe and the cooling part, and having a liquid path cross-sectional profile that is gradually reduced in the short-side direction of the cooling part and that is gradually enlarged in the long-side direction thereof; and a second partial structure part formed between the cooling part and a drain pipe, and having a liquid path cross-sectional profile that is gradually enlarged from the short-side of the cooling part and that is gradually reduced from the long-side thereof.

Abstract: A ceramic green sheet is irradiated with a laser beam of a high-peak short-pulse type to form a hole in the sheet. With the laser beam, a minimum oscillation output is more than 60% of a maximum oscillation output. This prevents material of the ceramic green sheet from melting partially and remaining around the hole. Therefore, a multi-layer assembly of ceramic green sheets built by joining the sheets in layers and baking these joined sheets hardly has a structural defect around a via-electrode provided in the hole.

Abstract: A dielectric ceramics includes a main ingredient, and a supplemental ingredient in an amount of 0.05 to 2 wt % for the main ingredient. The main ingredient is expressed by xBiO3/2-yCaO-zNbO5/2 and is within a scope of a specified quadrilateral region in a ternary system diagram, and the supplemental ingredient is a glass composition including at least SiO2, Li2O and MO (M includes at least one of Ca, Sr and Ba). A ceramic electronic component is produced by co-firing a dielectric layer composed of the dielectric ceramics and a conductive layer mainly composed of silver, and has a low degradation in Q value and excellent microwave characteristics.